| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A combined modelling approach to design test structures to study thermomigration in Cu interconnects
|
Ding, Y.
|
|
|
138 |
C |
p.
|
artikel
|
| 2 |
A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS
|
Azimi, S.
|
|
|
138 |
C |
p.
|
artikel
|
| 3 |
AC stress analysis of trench-based multi-gate transistors in a 40 nm e-NVM technology
|
Gay, R.
|
|
|
138 |
C |
p.
|
artikel
|
| 4 |
A data-driven method for anomaly detection and aging model parameter estimation of capacitors based on condition monitoring
|
Lv, Chunlin
|
|
|
138 |
C |
p.
|
artikel
|
| 5 |
A data-driven photovoltaic string current mismatch fault diagnosis method based on I-V curve
|
Zhang, Zhixiang
|
|
|
138 |
C |
p.
|
artikel
|
| 6 |
A fast decomposition algorithm of positive and negative sequence components with sampling noise optimization
|
Ma, Mingyao
|
|
|
138 |
C |
p.
|
artikel
|
| 7 |
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test
|
Zhang, Yi
|
|
|
138 |
C |
p.
|
artikel
|
| 8 |
Analysis of copper pillar bump interconnects for RF-filters
|
Eulenkamp, C.
|
|
|
138 |
C |
p.
|
artikel
|
| 9 |
Analysis of impact ionization on RF power LDMOS reliability under RF life test in radar system
|
Belaïd, M.A.
|
|
|
138 |
C |
p.
|
artikel
|
| 10 |
An event-oriented reliability assessment for DC link capacitors in grid connected inverter with low voltage ride through operation
|
Liu, Yi
|
|
|
138 |
C |
p.
|
artikel
|
| 11 |
An interpretable remaining useful life prediction scheme of lithium-ion battery considering capacity regeneration
|
Lyu, Guangzheng
|
|
|
138 |
C |
p.
|
artikel
|
| 12 |
An investigation of angle effect on heavy ion induced single event effect in SiC MOSFET
|
Yan, X.Y.
|
|
|
138 |
C |
p.
|
artikel
|
| 13 |
A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications
|
Douzi, Chawki
|
|
|
138 |
C |
p.
|
artikel
|
| 14 |
A novel nanoprobing analysis flow by using multi-probe configuration to localize silicide defect in MOSFET
|
Zheng, Shijun
|
|
|
138 |
C |
p.
|
artikel
|
| 15 |
Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests
|
Lou, Zaiqi
|
|
|
138 |
C |
p.
|
artikel
|
| 16 |
A temperature-insensitive process corner detection circuit based on self-timing ring oscillator
|
Yang, Lixin
|
|
|
138 |
C |
p.
|
artikel
|
| 17 |
A thermal network model for monitoring IGBT chip solder degradation based on feedback PI control
|
Zhang, Xiaotong
|
|
|
138 |
C |
p.
|
artikel
|
| 18 |
A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons
|
Pocaterra, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 19 |
Back gate impact on SEU characterization of a Double SOI 4k-bit SRAM
|
Gao, J.
|
|
|
138 |
C |
p.
|
artikel
|
| 20 |
Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance
|
Ortiz Gonzalez, J.
|
|
|
138 |
C |
p.
|
artikel
|
| 21 |
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
|
Modolo, N.
|
|
|
138 |
C |
p.
|
artikel
|
| 22 |
Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions
|
Pocaterra, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 23 |
Cleavage anisotropy of boron doped cracks in crystalline silicon
|
Liu, B.
|
|
|
138 |
C |
p.
|
artikel
|
| 24 |
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress
|
Bertoncello, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 25 |
Condition monitoring indicators for Si and SiC power modules
|
Di Nuzzo, G.
|
|
|
138 |
C |
p.
|
artikel
|
| 26 |
Condition monitoring of power module using S-parameters, TDR, and TDT
|
Pascal, Y.
|
|
|
138 |
C |
p.
|
artikel
|
| 27 |
Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation
|
May, Nicholas
|
|
|
138 |
C |
p.
|
artikel
|
| 28 |
Coupling simulation and accelerated degradation model for reliability estimation: Application to a voltage regulator
|
Al Rashid, Jaber
|
|
|
138 |
C |
p.
|
artikel
|
| 29 |
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
|
Masin, F.
|
|
|
138 |
C |
p.
|
artikel
|
| 30 |
Defect formation and mitigation in Cu/Cu joints formed through transient liquid phase bonding with Cu-Sn nanocomposite interlayer
|
Jiang, H.
|
|
|
138 |
C |
p.
|
artikel
|
| 31 |
Degradation mechanisms-based reliability modeling for metallized film capacitors under temperature and voltage stresses
|
Hu, Yifan
|
|
|
138 |
C |
p.
|
artikel
|
| 32 |
Design of RC trigger circuit for dynamically activated ESD protections ensuring application requirements and ESD performances
|
Merlo, L.
|
|
|
138 |
C |
p.
|
artikel
|
| 33 |
Development of a high accuracy and stability test bench for ageing measurement of 16 nm FinFETs based FPGA
|
Sobas, J.
|
|
|
138 |
C |
p.
|
artikel
|
| 34 |
Dynamic high temperature operating life test methodology for long-term switching reliability of GaN power devices
|
Tayyab, Muhammad Farhan
|
|
|
138 |
C |
p.
|
artikel
|
| 35 |
Editorial Board
|
|
|
|
138 |
C |
p.
|
artikel
|
| 36 |
Editorial (ESREF 2022 Special issue)
|
|
|
|
138 |
C |
p.
|
artikel
|
| 37 |
Effect of electroless Cu depositions for micro-via structure and thermal cycling reliability
|
Zhang, Zheng
|
|
|
138 |
C |
p.
|
artikel
|
| 38 |
Effect of EVA discoloration in 25-year-old single crystalline silicon photovoltaic modules operated under moderate climate
|
Jeong, Jae-Seong
|
|
|
138 |
C |
p.
|
artikel
|
| 39 |
Effect of post bonding annealing on the reliability of Al based wire bondings in IGBTs
|
Karanja, L.
|
|
|
138 |
C |
p.
|
artikel
|
| 40 |
Effect of thermal loading definitions on the mission profile-based reliability evaluation of power devices in PV inverters
|
Ryu, Taerim
|
|
|
138 |
C |
p.
|
artikel
|
| 41 |
Effects of proton and electron irradiations on the dielectric properties of epoxy/anhydride cured products
|
Zhang, D.
|
|
|
138 |
C |
p.
|
artikel
|
| 42 |
Effects of the hardness and roughness on the plastic deformation properties of electroplated gold bumps during thermocompression bonding
|
Elsotohy, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 43 |
Embedded systems and printed circuit boards as weak spots in HV-H3TRB tests
|
Brunko, A.
|
|
|
138 |
C |
p.
|
artikel
|
| 44 |
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors
|
Tselios, Konstantinos
|
|
|
138 |
C |
p.
|
artikel
|
| 45 |
Expedient validation of LED reliability with anomaly detection through multi-output Gaussian process regression
|
Lim, Sze Li Harry
|
|
|
138 |
C |
p.
|
artikel
|
| 46 |
Experimental analysis on stochastic behavior of preswitching time in STT-MRAM
|
Yazigy, N.
|
|
|
138 |
C |
p.
|
artikel
|
| 47 |
Experimental investigation of PCB embedded 1200 V IGBT/diode power pre-package under high-humidity high-temperature reverse voltage bias
|
Huesgen, T.
|
|
|
138 |
C |
p.
|
artikel
|
| 48 |
Experimental-numerical characterization of maximum current capability in Si-based surface mounted power devices
|
Sitta, Alessandro
|
|
|
138 |
C |
p.
|
artikel
|
| 49 |
Experimental research on performance degradation of TSV microstructure under thermal cycling, vibration and electrical stress
|
Fan, Zhengwei
|
|
|
138 |
C |
p.
|
artikel
|
| 50 |
Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C
|
Yu, Qingkui
|
|
|
138 |
C |
p.
|
artikel
|
| 51 |
Fabrication of polymeric vacuum-sealed cavities on a silicon wafer
|
Chowdhury, S.
|
|
|
138 |
C |
p.
|
artikel
|
| 52 |
Failure analysis of fabrication process in hermetic wafer-level packaging for microbolometer focal plane arrays
|
Xia, H.
|
|
|
138 |
C |
p.
|
artikel
|
| 53 |
Failure rate analysis of radiation tolerant design techniques on SRAM-based FPGAs
|
Vacca, E.
|
|
|
138 |
C |
p.
|
artikel
|
| 54 |
FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes
|
Shen, Chengjun
|
|
|
138 |
C |
p.
|
artikel
|
| 55 |
FEM simulations applied to the failure analysis of 3D printable finned liquid cold plates for high-power press-pack applications
|
Spaggiari, D.
|
|
|
138 |
C |
p.
|
artikel
|
| 56 |
Finite elements analyses of early-stage crack propagation in aluminum wire bonds due to power cycling
|
Halouani, A.
|
|
|
138 |
C |
p.
|
artikel
|
| 57 |
High complexity reliable space applications in commercial microprocessors
|
Aviles, Pablo M.
|
|
|
138 |
C |
p.
|
artikel
|
| 58 |
Hot-carrier reliability and performance study of transistors with variable gate-to-drain/source overlap
|
Devoge, P.
|
|
|
138 |
C |
p.
|
artikel
|
| 59 |
Hybrid domain-based fast transient thermal evaluation method for power semiconductor modules in EV motor drive
|
Zhou, Yu
|
|
|
138 |
C |
p.
|
artikel
|
| 60 |
Hydrogen sulphide (H2S) single gas testing on power semiconductor modules under high voltage
|
Hanf, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 61 |
Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon
|
Zenari, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 62 |
Impact of dielectric film thickness on field emission in MEMS capacitive switches
|
Theocharis, J.
|
|
|
138 |
C |
p.
|
artikel
|
| 63 |
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
|
Favero, D.
|
|
|
138 |
C |
p.
|
artikel
|
| 64 |
Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications
|
Mitrović, N.
|
|
|
138 |
C |
p.
|
artikel
|
| 65 |
Improved failure analysis in scanning acoustic microscopy via advanced signal processing techniques
|
Wolf, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 66 |
Investigating the reliability impacts of neutron-induced soft errors in aerial image classification CNNs implemented in a softcore SRAM-based FPGA GPU
|
Benevenuti, Fabio
|
|
|
138 |
C |
p.
|
artikel
|
| 67 |
Investigation of stress relaxation in SAC305 with micro-Raman spectroscopy
|
Liu, E
|
|
|
138 |
C |
p.
|
artikel
|
| 68 |
Investigation of thermal effect on solidification in Sn/Cu interconnects during self-propagating exothermic reaction bonding
|
Liang, Shuibao
|
|
|
138 |
C |
p.
|
artikel
|
| 69 |
Investigation on the junction temperature of planar power 4H-SiC MOSFET under short circuit operation
|
Nguyen, Tien Anh
|
|
|
138 |
C |
p.
|
artikel
|
| 70 |
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
|
Fregolent, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 71 |
Life prediction of power devices of VIENNA rectifier considering the effects of aging and dust accumulation
|
Liu, Hongpeng
|
|
|
138 |
C |
p.
|
artikel
|
| 72 |
Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling
|
Shqair, Mustafa
|
|
|
138 |
C |
p.
|
artikel
|
| 73 |
Mission profile simplification method for reliability analysis of PV converters
|
Fogsgaard, Martin Bendix
|
|
|
138 |
C |
p.
|
artikel
|
| 74 |
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress
|
Roccato, Nicola
|
|
|
138 |
C |
p.
|
artikel
|
| 75 |
Multchip SiC-based compact module for automotive applications: A high speed thermal study
|
Anoldo, L.
|
|
|
138 |
C |
p.
|
artikel
|
| 76 |
Multi-domain system level modeling approach for assessment of degradation behaviour under thermal and thermo-mechanical stress
|
Dobs, T.
|
|
|
138 |
C |
p.
|
artikel
|
| 77 |
Multiscale warpage behaviour in a Fan-Out Panel during thermal cycles
|
Hölck, O.
|
|
|
138 |
C |
p.
|
artikel
|
| 78 |
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters
|
Liu, Kaixin
|
|
|
138 |
C |
p.
|
artikel
|
| 79 |
New measurement method to investigated service life of protection networks exposed to ESD
|
Ruffat, F.
|
|
|
138 |
C |
p.
|
artikel
|
| 80 |
Novel stress analysis method on board-level during drop tests for electrical components
|
Huotari, J.
|
|
|
138 |
C |
p.
|
artikel
|
| 81 |
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test
|
Wu, Qiang
|
|
|
138 |
C |
p.
|
artikel
|
| 82 |
On the injected charge distribution and discharge currents in the dielectric films for MEMS capacitive switches
|
Papaioannou, G.
|
|
|
138 |
C |
p.
|
artikel
|
| 83 |
Optimized selection of materials for IGBT module packaging
|
Alavi, O.
|
|
|
138 |
C |
p.
|
artikel
|
| 84 |
Package-level Joule-heating measurements for multilevel interconnects
|
Jose, S.
|
|
|
138 |
C |
p.
|
artikel
|
| 85 |
Performance analysis of coloured BIPV systems depending on reliability of irradiance data
|
Jeong, Sookyung
|
|
|
138 |
C |
p.
|
artikel
|
| 86 |
Power cycling tests under driving ΔTj = 125 °C on the Cu clip bonded EV power module
|
Kim, Dongjin
|
|
|
138 |
C |
p.
|
artikel
|
| 87 |
Prediction of failure in time (FIT) of electrical connectors with short term tests
|
Song, Jian
|
|
|
138 |
C |
p.
|
artikel
|
| 88 |
Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress
|
Richardeau, F.
|
|
|
138 |
C |
p.
|
artikel
|
| 89 |
Prognosis of LED lumen degradation using Bayesian optimized neural network approach
|
Pugalenthi, Karkulali
|
|
|
138 |
C |
p.
|
artikel
|
| 90 |
PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients
|
Andjelkovic, Marko
|
|
|
138 |
C |
p.
|
artikel
|
| 91 |
PV module life prediction based on coupled failure model
|
Ma, Mingyao
|
|
|
138 |
C |
p.
|
artikel
|
| 92 |
Rapid three-dimensional reconstruction of printed circuit board using femtosecond laser delayering and digital microscopy
|
Choi, Hongbin
|
|
|
138 |
C |
p.
|
artikel
|
| 93 |
Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
|
Wang, Yu-Yun
|
|
|
138 |
C |
p.
|
artikel
|
| 94 |
Reliability assessment of miniaturised electromechanical RF relays for space applications
|
Marozau, I.
|
|
|
138 |
C |
p.
|
artikel
|
| 95 |
Reliability-centered prediction methods of clock battery low-output-voltage event for smart electricity meters
|
Dai, Y.J.
|
|
|
138 |
C |
p.
|
artikel
|
| 96 |
Reliability estimation of complex systems based on a Wiener process with random effects and D-vine copulas
|
Zheng, Bokai
|
|
|
138 |
C |
p.
|
artikel
|
| 97 |
Research on ESD failure voltage model of the T-shaped wiring structure in GOA products
|
Yang, Borui
|
|
|
138 |
C |
p.
|
artikel
|
| 98 |
RF signals over field emission currents: A theoretical study for MEMS capacitive switches
|
Michalas, Loukas
|
|
|
138 |
C |
p.
|
artikel
|
| 99 |
Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process
|
Deogaonkar, Anirudha
|
|
|
138 |
C |
p.
|
artikel
|
| 100 |
Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation
|
Nicoletto, Marco
|
|
|
138 |
C |
p.
|
artikel
|
| 101 |
Ruthenium based RRAM for low variability switching and scaling for contemporary computing systems
|
Seal, Mainak
|
|
|
138 |
C |
p.
|
artikel
|
| 102 |
Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers
|
Strenaer, R.
|
|
|
138 |
C |
p.
|
artikel
|
| 103 |
Self-propagating exothermic reaction assisted Cu clip bonding for effective high-power electronics packaging
|
Liu, Canyu
|
|
|
138 |
C |
p.
|
artikel
|
| 104 |
Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding
|
Tsau, Yan Wen
|
|
|
138 |
C |
p.
|
artikel
|
| 105 |
Single-event burnout of LDMOS with polygon P+ structure
|
Wang, Shiping
|
|
|
138 |
C |
p.
|
artikel
|
| 106 |
Soft-switching inverter investigation for three-phase IM drive as wind turbine emulator design
|
Moussa, Intissar
|
|
|
138 |
C |
p.
|
artikel
|
| 107 |
Squeeze-out and bond strength of patterned CuSn SLID seal-frames
|
Papatzacos, P.H.
|
|
|
138 |
C |
p.
|
artikel
|
| 108 |
Study of migration and coalescence of voids driven by electric current stressing in solder interconnects using phase field simulation
|
Liang, S.
|
|
|
138 |
C |
p.
|
artikel
|
| 109 |
Study of short-circuit robustness of p-GaN and cascode transistors
|
Landel, M.
|
|
|
138 |
C |
p.
|
artikel
|
| 110 |
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs
|
Chiocchetta, F.
|
|
|
138 |
C |
p.
|
artikel
|
| 111 |
The impact of mission profile on system level reliability of cascaded H-bridge multilevel PV inverter
|
Gatla, Ranjith Kumar
|
|
|
138 |
C |
p.
|
artikel
|
| 112 |
The influence of thermal cycling test parameters on the failure rate of electrical connectors
|
Krüger, K.
|
|
|
138 |
C |
p.
|
artikel
|
| 113 |
1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation
|
Matteo, F.
|
|
|
138 |
C |
p.
|
artikel
|
| 114 |
Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures
|
Gunaydin, Yasin
|
|
|
138 |
C |
p.
|
artikel
|
| 115 |
Warpage measurements to support the development of mmWave modules
|
Albrecht, Oliver
|
|
|
138 |
C |
p.
|
artikel
|
Tijdschrift beschrijving