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                                       Details for article 93 of 115 found articles
 
 
  Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
 
 
Title: Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
Author: Wang, Yu-Yun
Wang, Kuan-Chi
Chang, Ting-Yu
Ronchi, Nicolò
O'Sullivan, Barry
Banerjee, Kaustuv
van den Bosch, Geert
Van Houdt, Jan
Wu, Tian-Li
Appeared in: Microelectronics reliability
Paging: Volume 138 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 93 of 115 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands