nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring
|
Hayashi, Shin-Ichiro |
|
|
114 |
C |
p. |
artikel |
2 |
Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET)
|
Yan, Gangping |
|
|
114 |
C |
p. |
artikel |
3 |
A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes
|
Wang, Zhian |
|
|
114 |
C |
p. |
artikel |
4 |
AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology
|
Locati, J. |
|
|
114 |
C |
p. |
artikel |
5 |
A 3-D thermal network model for the temperature monitoring of thermal grease as interface material
|
Zhang, Xiaotong |
|
|
114 |
C |
p. |
artikel |
6 |
A fault tolerant switched reluctance motor drive for electric vehicles under multi-switches open-fault conditions
|
Yang, Qingqing |
|
|
114 |
C |
p. |
artikel |
7 |
Ageing of glass passivated TRIAC devices under thermal and electrical stress
|
Buvat, Y. |
|
|
114 |
C |
p. |
artikel |
8 |
A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory
|
Wei, Debao |
|
|
114 |
C |
p. |
artikel |
9 |
A lifetime assessment and prediction method for large area solder joints
|
Lederer, M. |
|
|
114 |
C |
p. |
artikel |
10 |
A method to determine critical circuit blocks for electromigration based on temperature analysis
|
Nunes, R.O. |
|
|
114 |
C |
p. |
artikel |
11 |
A method to extract lumped thermal networks of capacitors for reliability oriented design
|
Delmonte, N. |
|
|
114 |
C |
p. |
artikel |
12 |
A method to improve the reliability of three-level inverter based on equivalent input disturbance and repetitive control combinations
|
Yang, Guoliang |
|
|
114 |
C |
p. |
artikel |
13 |
An active thermal management strategy for switched reluctance drive system with minimizing current sampling delay
|
Yang, Qingqing |
|
|
114 |
C |
p. |
artikel |
14 |
Analog and mixed-signal circuits simulation for product level EMMI analysis
|
Melis, Tommaso |
|
|
114 |
C |
p. |
artikel |
15 |
Analysis of counterfeit electronics
|
Mura, G. |
|
|
114 |
C |
p. |
artikel |
16 |
Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents
|
Gunaydin, Yasin |
|
|
114 |
C |
p. |
artikel |
17 |
Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations
|
Tartarin, J.G. |
|
|
114 |
C |
p. |
artikel |
18 |
Analysis of the aging mechanism occurring at the bond-wire contact of IGBT power devices during power cycling
|
Dornic, N. |
|
|
114 |
C |
p. |
artikel |
19 |
Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model
|
Muñoz-Gorriz, J. |
|
|
114 |
C |
p. |
artikel |
20 |
Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
|
Pérez-Martín, E. |
|
|
114 |
C |
p. |
artikel |
21 |
An error detecting scheme with input offset regulation for enhancing reliability of ultralow-voltage SRAM
|
Yang, Pan |
|
|
114 |
C |
p. |
artikel |
22 |
An improved lifetime prediction method for metallized film capacitor considering harmonics and degradation process
|
Lv, Chunlin |
|
|
114 |
C |
p. |
artikel |
23 |
An investigation of FinFET single-event latch-up characteristic and mitigation method
|
Li, Dongqing |
|
|
114 |
C |
p. |
artikel |
24 |
A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode
|
Susinni, G. |
|
|
114 |
C |
p. |
artikel |
25 |
A novel accelerated life-test method under thermal cyclic loadings for electronic devices considering multiple failure mechanisms
|
Li, Yaqiu |
|
|
114 |
C |
p. |
artikel |
26 |
A novel BIST for monitoring aging/temperature by self-triggered scheme to improve the reliability of STT-MRAM
|
Zhou, Y. |
|
|
114 |
C |
p. |
artikel |
27 |
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
|
Modolo, Nicola |
|
|
114 |
C |
p. |
artikel |
28 |
A power transfer model-based method for lithium-ion battery discharge time prediction of electric rotatory-wing UAV
|
Tang, D.Y. |
|
|
114 |
C |
p. |
artikel |
29 |
A rapid life-prediction approach for solder joints based on modified Engelmaier fatigue model
|
Pan, Yuxiong |
|
|
114 |
C |
p. |
artikel |
30 |
A reliability evaluation method for multi-performance degradation products based on the Wiener process and Copula function
|
Pan, Guangze |
|
|
114 |
C |
p. |
artikel |
31 |
Assessing multi-output Gaussian process regression for modeling of non-monotonic degradation trends of light emitting diodes in storage
|
Lim, S.L.H. |
|
|
114 |
C |
p. |
artikel |
32 |
A study of hopping transport during discharging in SiNx films for MEMS capacitive switches
|
Birmpiliotis, D. |
|
|
114 |
C |
p. |
artikel |
33 |
A study of material stoichiometry on charging properties of SiNx films for potential application in RF MEMS capacitive switches
|
Koutsoureli, M. |
|
|
114 |
C |
p. |
artikel |
34 |
Asynchronous early output majority voter and a relative-timed asynchronous TMR implementation
|
Balasubramanian, Padmanabhan |
|
|
114 |
C |
p. |
artikel |
35 |
A time-domain stability analysis method for LLC resonant converter based on Floquet theory
|
Li, Hong |
|
|
114 |
C |
p. |
artikel |
36 |
A time-domain stability analysis method for paralleled LLC resonant converter system based on Floquet theory
|
Li, Hong |
|
|
114 |
C |
p. |
artikel |
37 |
Barrier properties of Cu/TiW/ITO electrode for Si heterojunction solar cell under low temperature thermal aging
|
Jeong, Jae-Seong |
|
|
114 |
C |
p. |
artikel |
38 |
Can automotive MEMS be reliably used in space applications? An assessment method under sequential bi-parameter testing
|
Auchlin, Maxime |
|
|
114 |
C |
p. |
artikel |
39 |
Capacitive micromachined ultrasonic transducers leak detection by dye penetrant test
|
Nowodzinski, A. |
|
|
114 |
C |
p. |
artikel |
40 |
CFD modeling of additive manufacturing liquid cold plates for more reliable power press-pack assemblies
|
Cova, P. |
|
|
114 |
C |
p. |
artikel |
41 |
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
|
Tetzner, Kornelius |
|
|
114 |
C |
p. |
artikel |
42 |
Circuit design using Schmitt Trigger to reliability improvement
|
Zimpeck, A.L. |
|
|
114 |
C |
p. |
artikel |
43 |
Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test
|
Zhao, D. |
|
|
114 |
C |
p. |
artikel |
44 |
Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules
|
Scognamillo, Ciro |
|
|
114 |
C |
p. |
artikel |
45 |
Comparative evaluation of reliability assessment methods of power modules in motor drive inverter
|
Choi, U.M. |
|
|
114 |
C |
p. |
artikel |
46 |
Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation
|
Schvittz, R.B. |
|
|
114 |
C |
p. |
artikel |
47 |
Comparisons of SnO2 gas sensor degradation under elevated storage and working conditions
|
Sun, Yongquan |
|
|
114 |
C |
p. |
artikel |
48 |
Conducted EMI mitigation in transformerless PV inverters based on intrinsic MOSFET parameters
|
Kraiem, S. |
|
|
114 |
C |
p. |
artikel |
49 |
Conducted EMI susceptibility analysis of a COTS processor as function of aging
|
Benfica, Juliano |
|
|
114 |
C |
p. |
artikel |
50 |
Correlative microscopy workflow for precise targeted failure analysis of multi-layer ceramic capacitors
|
May, Nicholas |
|
|
114 |
C |
p. |
artikel |
51 |
Coupled simulations for lifetime prediction of board level packages encapsulated by thermoset injection moulding based on the Coffin-Manson relation
|
Kulkarni, R. |
|
|
114 |
C |
p. |
artikel |
52 |
CSME: A novel cycle-sensing margin enhancement scheme for high yield STT-MRAM
|
Cai, H. |
|
|
114 |
C |
p. |
artikel |
53 |
Damage based PoF model of solder joints under temperature cycling and electric coupling condition
|
Yuan, Jiaxin |
|
|
114 |
C |
p. |
artikel |
54 |
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons
|
Gao, Z. |
|
|
114 |
C |
p. |
artikel |
55 |
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements
|
Piva, F. |
|
|
114 |
C |
p. |
artikel |
56 |
Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications
|
Aguiar, Y.Q. |
|
|
114 |
C |
p. |
artikel |
57 |
Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology
|
Sharbati, Samaneh |
|
|
114 |
C |
p. |
artikel |
58 |
Editorial Board
|
|
|
|
114 |
C |
p. |
artikel |
59 |
Editorial of 31st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2020)
|
Papaioannou, George |
|
|
114 |
C |
p. |
artikel |
60 |
Effect of cell size reduction on the threshold voltage of UMOSFETs
|
Baba, Yoshiro |
|
|
114 |
C |
p. |
artikel |
61 |
Effect of integrated anneal optimizations of electroplated Cu thin films interconnects
|
Wahab, Y.A. |
|
|
114 |
C |
p. |
artikel |
62 |
Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis
|
Du, H. |
|
|
114 |
C |
p. |
artikel |
63 |
Effect of thermal and vibrational combined ageing on QFN terminal pads solder reliability
|
Arabi, F. |
|
|
114 |
C |
p. |
artikel |
64 |
Effects of alloying elements in high reliability copper wire bond material for high temperature applications
|
Eto, M. |
|
|
114 |
C |
p. |
artikel |
65 |
Effects of anisotropy on the reliability of TSV microstructure
|
Fan, Zhengwei |
|
|
114 |
C |
p. |
artikel |
66 |
Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction
|
Janioud, P. |
|
|
114 |
C |
p. |
artikel |
67 |
Effects of solder degradation on the die temperature measurement via internal gate resistance
|
Kawahara, C. |
|
|
114 |
C |
p. |
artikel |
68 |
Evaluating the soft error sensitivity of a GPU-based SoC for matrix multiplication
|
León, Germán |
|
|
114 |
C |
p. |
artikel |
69 |
Evaluation based on performance and failure of PV system in 10 years field-aged 1 MW PV power plant
|
Oh, Wonwook |
|
|
114 |
C |
p. |
artikel |
70 |
Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation
|
Galy, Ph. |
|
|
114 |
C |
p. |
artikel |
71 |
Experimental setup to monitor non-destructive single events triggered by ionizing radiation in power devices
|
Pocaterra, Marco |
|
|
114 |
C |
p. |
artikel |
72 |
Exploration of gate trench module for vertical GaN devices
|
Ruzzarin, M. |
|
|
114 |
C |
p. |
artikel |
73 |
Extraction of wearout model parameters using on-line test of an SRAM
|
Hsu, Shu-Han |
|
|
114 |
C |
p. |
artikel |
74 |
Failure-analysis method of soldering interfaces in light-emitting diode packages based on time-domain transient thermal response
|
Ma, Byongjin |
|
|
114 |
C |
p. |
artikel |
75 |
Fault diagnosis of cracks in crystalline silicon photovoltaic modules through I-V curve
|
Ma, Mingyao |
|
|
114 |
C |
p. |
artikel |
76 |
Faults and reliability analysis of negative resistance converter traction power system
|
Yang, Xiaofeng |
|
|
114 |
C |
p. |
artikel |
77 |
FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor
|
Waqar, Muhammad |
|
|
114 |
C |
p. |
artikel |
78 |
FEM-aided damage model calibration method for experimental results
|
Fogsgaard, M.B. |
|
|
114 |
C |
p. |
artikel |
79 |
Field emission induced-damage in the actuation paths of MEMS capacitive structures
|
Theocharis, J. |
|
|
114 |
C |
p. |
artikel |
80 |
FPGA-based reliability testing and analysis for 3D NAND flash memory
|
Wei, Debao |
|
|
114 |
C |
p. |
artikel |
81 |
Fretting wear reliability assessment methodology of gold-plated electrical connectors considering manufacture parameters distribution
|
Ling, S. |
|
|
114 |
C |
p. |
artikel |
82 |
GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress
|
Caria, A. |
|
|
114 |
C |
p. |
artikel |
83 |
Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode
|
Castellazzi, A. |
|
|
114 |
C |
p. |
artikel |
84 |
Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode
|
Takamori, Taro |
|
|
114 |
C |
p. |
artikel |
85 |
Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs
|
Borghese, A. |
|
|
114 |
C |
p. |
artikel |
86 |
Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs
|
Nakayama, T. |
|
|
114 |
C |
p. |
artikel |
87 |
Gold wire bond study for automotive application
|
Papadopoulos, C. |
|
|
114 |
C |
p. |
artikel |
88 |
Health monitoring of mechanically fatigued flexible lithium ion battery by electrochemical impedance spectroscopy
|
Kim, Jae-Yeon |
|
|
114 |
C |
p. |
artikel |
89 |
Heavy ion and proton induced single event upsets in 3D SRAM
|
He, Z. |
|
|
114 |
C |
p. |
artikel |
90 |
Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices
|
Liu, T.Q. |
|
|
114 |
C |
p. |
artikel |
91 |
Hot-Carrier degradation in P- and N-channel EDMOS for smart power application
|
Li, Shuang |
|
|
114 |
C |
p. |
artikel |
92 |
Hot-carrier-injection resilient RF power amplifier using adaptive bias
|
Pazos, S.M. |
|
|
114 |
C |
p. |
artikel |
93 |
IGBT aging monitoring and remaining lifetime prediction based on long short-term memory (LSTM) networks
|
Li, Wanping |
|
|
114 |
C |
p. |
artikel |
94 |
Impact of crystalline orientation of lead-free solder joints on thermomechanical response and reliability of ball grid array components
|
Ben Romdhane, E. |
|
|
114 |
C |
p. |
artikel |
95 |
Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices
|
Xi, K. |
|
|
114 |
C |
p. |
artikel |
96 |
Impact of modulation strategies on the lifetime estimation of impedance source inverter in wind power system
|
Fan, Peng |
|
|
114 |
C |
p. |
artikel |
97 |
Impact of stray-inductance imbalance on short-circuit capability of multi-chip SiC power modules
|
Chou, K. |
|
|
114 |
C |
p. |
artikel |
98 |
Impact of the sensing current density on PN-junction based temperature estimation methods for Si and SiC power devices
|
Hoffmann, Felix |
|
|
114 |
C |
p. |
artikel |
99 |
Improving GPU register file reliability with a comprehensive ISA extension
|
Gonçalves, M.M. |
|
|
114 |
C |
p. |
artikel |
100 |
Influence of CdTe solar cell properties on stability at high temperatures
|
Bertoncello, Matteo |
|
|
114 |
C |
p. |
artikel |
101 |
Influence of temperature and humidity on power cycling capability of power modules
|
Wuest, Felix |
|
|
114 |
C |
p. |
artikel |
102 |
Interface characterization of CuCu ball bonds by a fast shear fatigue method
|
Czerny, B. |
|
|
114 |
C |
p. |
artikel |
103 |
Investigation of critical parameters in power supplies components failure due to electric pulse
|
Curos, L. |
|
|
114 |
C |
p. |
artikel |
104 |
Investigation of multiple short-circuits characteristics and reliability in SiC power devices used for a start-up method of power converters
|
Mannen, Tomoyuki |
|
|
114 |
C |
p. |
artikel |
105 |
Investigation of the current collapse behaviour in GaN power HEMTs with highly adjustable pulse and measurement concept
|
Goller, M. |
|
|
114 |
C |
p. |
artikel |
106 |
Investigation of the mechanical properties of corroded sintered silver layers by using Nanoindentation
|
Kolbinger, E. |
|
|
114 |
C |
p. |
artikel |
107 |
Life-cycle reliability design optimization of high-power DC electromagnetic devices based on time-dependent non-probabilistic convex model process
|
Ye, Xuerong |
|
|
114 |
C |
p. |
artikel |
108 |
Lithium-ion battery performance degradation evaluation in dynamic operating conditions based on a digital twin model
|
Qu, X. |
|
|
114 |
C |
p. |
artikel |
109 |
Lithium-ion battery SoH estimation based on incremental capacity peak tracking at several current levels for online application
|
Maures, M. |
|
|
114 |
C |
p. |
artikel |
110 |
Magnetic field imaging and light induced capacitance alteration for failure analysis of Cu-TSV interconnects
|
De Wolf, Ingrid |
|
|
114 |
C |
p. |
artikel |
111 |
0.5 μm GaN RF power bar technology space evaluation
|
Van de Casteele, J. |
|
|
114 |
C |
p. |
artikel |
112 |
Microstructure evolutions upon Ni(Pt) silicidation and the different responses to the metal etch
|
Qin, Wentao |
|
|
114 |
C |
p. |
artikel |
113 |
Mission profile-oriented configuration of PV panels for lifetime and cost-efficiency of PV inverters
|
Wang, Dingyi |
|
|
114 |
C |
p. |
artikel |
114 |
Mitigating single event upset of FPGA for the onboard bus control of satellite
|
Cui, Xiuhai |
|
|
114 |
C |
p. |
artikel |
115 |
Mode identification for reliability improvement of MMC
|
Fan, X.F. |
|
|
114 |
C |
p. |
artikel |
116 |
Modeling and analysis of the catastrophic failure and degradation data
|
Kim, Seung-Hyun |
|
|
114 |
C |
p. |
artikel |
117 |
Modeling and fault diagnosis of multi-phase winding inter-turn short circuit for five-phase PMSM based on improved trust region
|
Yang, J.W. |
|
|
114 |
C |
p. |
artikel |
118 |
Modular dynamic pulse stress test system for discrete high power semiconductors
|
Patmanidis, K. |
|
|
114 |
C |
p. |
artikel |
119 |
Monitoring of parameter stability of SiC MOSFETs in real application tests
|
Sievers, M. |
|
|
114 |
C |
p. |
artikel |
120 |
Multimodal fault-tolerant control for single-phase cascaded off-grid PV-storage system with PV failure using hybrid modulation
|
Liu, Zhao |
|
|
114 |
C |
p. |
artikel |
121 |
Multiple failure mode identification of SiC planar MOSFETs in short-circuit operation
|
Wang, Bixuan |
|
|
114 |
C |
p. |
artikel |
122 |
New definition of critical energy for SiC MOSFET robustness under short circuit operations: The repetitive critical energy
|
Chen, C. |
|
|
114 |
C |
p. |
artikel |
123 |
New power module concept in PCB-embedded technology with silver sintering die attach
|
Tablati, A. |
|
|
114 |
C |
p. |
artikel |
124 |
Non-destructive automatic die-level defect detection of counterfeit microelectronics using machine vision
|
Ahmadi, B. |
|
|
114 |
C |
p. |
artikel |
125 |
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy
|
Nardo, A. |
|
|
114 |
C |
p. |
artikel |
126 |
Novel failure traces beyond the barrier on the floating device
|
Lee, Gwang Wook |
|
|
114 |
C |
p. |
artikel |
127 |
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
|
Canato, E. |
|
|
114 |
C |
p. |
artikel |
128 |
Online junction temperature estimation using integrated NTC thermistor in IGBT modules for PMSM drives
|
Ma, Mingyao |
|
|
114 |
C |
p. |
artikel |
129 |
On the analysis of radiation-induced failures in the AXI interconnect module
|
De Sio, C. |
|
|
114 |
C |
p. |
artikel |
130 |
On the replacement of water as coupling medium in scanning acoustic microscopy analysis of sensitive electronics components
|
Hertl, M. |
|
|
114 |
C |
p. |
artikel |
131 |
On the use of soft gamma radiation to characterize the pre-breakdown carrier multiplication in SiC power MOSFETs and its correlation to the TCR failure rate as measured by neutron irradiation
|
Ciappa, Mauro |
|
|
114 |
C |
p. |
artikel |
132 |
Optimal sampling for accelerated testing in 14 nm FinFET ring oscillators
|
Hsu, Shu-Han |
|
|
114 |
C |
p. |
artikel |
133 |
Packaging reliability estimation of high-power device modules by utilizing silver sintering technology
|
Lee, Chang-Chun |
|
|
114 |
C |
p. |
artikel |
134 |
Parameters sensitivity analysis of silicon carbide buck converters to extract features for condition monitoring
|
Loghmani Moghaddam Toussi, A. |
|
|
114 |
C |
p. |
artikel |
135 |
Peculiar failure mechanisms in GaN power transistors
|
Vanzi, M. |
|
|
114 |
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Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET
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Prediction of solar particle events with SRAM-based soft error rate monitor and supervised machine learning
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Profiling of carriers in a 3D flash memory cell with nanometer-level resolution using scanning nonlinear dielectric microscopy
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Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications
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Reliability analysis of excitation control modes of a synchronous condenser during grid-integration at the speed-falling stage
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Reliability-driven pin assignment optimization to improve in-orbit soft-error rate
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Reliability in the era of electrification in aviation: A systems approach
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Reliability limitations from crystal defects in thick GaN epitaxial layers
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Reliability of H-terminated diamond MESFETs in high power dissipation operating condition
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Reliability-oriented optimization of aluminum electrolytic capacitor considering uncertain mission profile
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Reliability prediction of FinFET FPGAs by MTOL
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Reliability study of PCB-embedded power dies using solderless pressed metal foam
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Reliability test for subsea power semiconductors
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Reliable endpoint technique on Si trenching for backside circuit edit
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Research on 3D TLC NAND flash reliability from the perspective of threshold voltage distribution
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Robustness of pressure sensors with piezoresistive nanogauges up to 522 °C
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
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Row hammer avoidance analysis of DDR3 SDRAM
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Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
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Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction
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Simplified hybrid reliability simulation approach of a VSC DC grid with integration of an improved DC current flow controller
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Single-event induced failure mode of PWM in DC/DC converter
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Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature
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Single-pulse observation of photoemission during avalanche breakdown in insulated gate bipolar transistor
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SMART manufacturing through predictive FA
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Smart soiling sensor for PV modules
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Solving Time-dependent reliability-based design optimization by adaptive differential evolution algorithm and time-dependent polynomial chaos expansions (ADE-T-PCE)
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Spatial scale dependent impact of non-uniform interface defect distribution on field effect mobility in SiC MOSFETs
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Study of moisture transport in silicone gel for IGBT modules
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Study of temperature dependence of breakdown voltage and AC TDDB reliability for thick insulator film deposited by plasma process
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Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes
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System-level reliability assessment for a direct-drive PMSG based wind turbine with multiple converters
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Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance
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Thermo-mechanical assessment of silver sintering for attaching power components in embedded PCB
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UIS performance and ruggedness of stand-alone and cascode SiC JFETs
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Ultrasonic monitoring performance degradation of lithium ion battery
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Using of bond-wire resistance as aging indicator of semiconductor power modules
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Vibration-induced dynamic characteristics modeling of electrical contact resistance for connectors
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Wear-out failure of an IGBT module in motor drives due to uneven thermal impedance of power semiconductor devices
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Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules
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