Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             175 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring Hayashi, Shin-Ichiro

114 C p.
artikel
2 Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) Yan, Gangping

114 C p.
artikel
3 A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes Wang, Zhian

114 C p.
artikel
4 AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology Locati, J.

114 C p.
artikel
5 A 3-D thermal network model for the temperature monitoring of thermal grease as interface material Zhang, Xiaotong

114 C p.
artikel
6 A fault tolerant switched reluctance motor drive for electric vehicles under multi-switches open-fault conditions Yang, Qingqing

114 C p.
artikel
7 Ageing of glass passivated TRIAC devices under thermal and electrical stress Buvat, Y.

114 C p.
artikel
8 A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory Wei, Debao

114 C p.
artikel
9 A lifetime assessment and prediction method for large area solder joints Lederer, M.

114 C p.
artikel
10 A method to determine critical circuit blocks for electromigration based on temperature analysis Nunes, R.O.

114 C p.
artikel
11 A method to extract lumped thermal networks of capacitors for reliability oriented design Delmonte, N.

114 C p.
artikel
12 A method to improve the reliability of three-level inverter based on equivalent input disturbance and repetitive control combinations Yang, Guoliang

114 C p.
artikel
13 An active thermal management strategy for switched reluctance drive system with minimizing current sampling delay Yang, Qingqing

114 C p.
artikel
14 Analog and mixed-signal circuits simulation for product level EMMI analysis Melis, Tommaso

114 C p.
artikel
15 Analysis of counterfeit electronics Mura, G.

114 C p.
artikel
16 Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents Gunaydin, Yasin

114 C p.
artikel
17 Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations Tartarin, J.G.

114 C p.
artikel
18 Analysis of the aging mechanism occurring at the bond-wire contact of IGBT power devices during power cycling Dornic, N.

114 C p.
artikel
19 Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model Muñoz-Gorriz, J.

114 C p.
artikel
20 Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements Pérez-Martín, E.

114 C p.
artikel
21 An error detecting scheme with input offset regulation for enhancing reliability of ultralow-voltage SRAM Yang, Pan

114 C p.
artikel
22 An improved lifetime prediction method for metallized film capacitor considering harmonics and degradation process Lv, Chunlin

114 C p.
artikel
23 An investigation of FinFET single-event latch-up characteristic and mitigation method Li, Dongqing

114 C p.
artikel
24 A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode Susinni, G.

114 C p.
artikel
25 A novel accelerated life-test method under thermal cyclic loadings for electronic devices considering multiple failure mechanisms Li, Yaqiu

114 C p.
artikel
26 A novel BIST for monitoring aging/temperature by self-triggered scheme to improve the reliability of STT-MRAM Zhou, Y.

114 C p.
artikel
27 A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects Modolo, Nicola

114 C p.
artikel
28 A power transfer model-based method for lithium-ion battery discharge time prediction of electric rotatory-wing UAV Tang, D.Y.

114 C p.
artikel
29 A rapid life-prediction approach for solder joints based on modified Engelmaier fatigue model Pan, Yuxiong

114 C p.
artikel
30 A reliability evaluation method for multi-performance degradation products based on the Wiener process and Copula function Pan, Guangze

114 C p.
artikel
31 Assessing multi-output Gaussian process regression for modeling of non-monotonic degradation trends of light emitting diodes in storage Lim, S.L.H.

114 C p.
artikel
32 A study of hopping transport during discharging in SiNx films for MEMS capacitive switches Birmpiliotis, D.

114 C p.
artikel
33 A study of material stoichiometry on charging properties of SiNx films for potential application in RF MEMS capacitive switches Koutsoureli, M.

114 C p.
artikel
34 Asynchronous early output majority voter and a relative-timed asynchronous TMR implementation Balasubramanian, Padmanabhan

114 C p.
artikel
35 A time-domain stability analysis method for LLC resonant converter based on Floquet theory Li, Hong

114 C p.
artikel
36 A time-domain stability analysis method for paralleled LLC resonant converter system based on Floquet theory Li, Hong

114 C p.
artikel
37 Barrier properties of Cu/TiW/ITO electrode for Si heterojunction solar cell under low temperature thermal aging Jeong, Jae-Seong

114 C p.
artikel
38 Can automotive MEMS be reliably used in space applications? An assessment method under sequential bi-parameter testing Auchlin, Maxime

114 C p.
artikel
39 Capacitive micromachined ultrasonic transducers leak detection by dye penetrant test Nowodzinski, A.

114 C p.
artikel
40 CFD modeling of additive manufacturing liquid cold plates for more reliable power press-pack assemblies Cova, P.

114 C p.
artikel
41 Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices Tetzner, Kornelius

114 C p.
artikel
42 Circuit design using Schmitt Trigger to reliability improvement Zimpeck, A.L.

114 C p.
artikel
43 Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test Zhao, D.

114 C p.
artikel
44 Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules Scognamillo, Ciro

114 C p.
artikel
45 Comparative evaluation of reliability assessment methods of power modules in motor drive inverter Choi, U.M.

114 C p.
artikel
46 Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation Schvittz, R.B.

114 C p.
artikel
47 Comparisons of SnO2 gas sensor degradation under elevated storage and working conditions Sun, Yongquan

114 C p.
artikel
48 Conducted EMI mitigation in transformerless PV inverters based on intrinsic MOSFET parameters Kraiem, S.

114 C p.
artikel
49 Conducted EMI susceptibility analysis of a COTS processor as function of aging Benfica, Juliano

114 C p.
artikel
50 Correlative microscopy workflow for precise targeted failure analysis of multi-layer ceramic capacitors May, Nicholas

114 C p.
artikel
51 Coupled simulations for lifetime prediction of board level packages encapsulated by thermoset injection moulding based on the Coffin-Manson relation Kulkarni, R.

114 C p.
artikel
52 CSME: A novel cycle-sensing margin enhancement scheme for high yield STT-MRAM Cai, H.

114 C p.
artikel
53 Damage based PoF model of solder joints under temperature cycling and electric coupling condition Yuan, Jiaxin

114 C p.
artikel
54 Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons Gao, Z.

114 C p.
artikel
55 Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements Piva, F.

114 C p.
artikel
56 Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications Aguiar, Y.Q.

114 C p.
artikel
57 Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology Sharbati, Samaneh

114 C p.
artikel
58 Editorial Board
114 C p.
artikel
59 Editorial of 31st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2020) Papaioannou, George

114 C p.
artikel
60 Effect of cell size reduction on the threshold voltage of UMOSFETs Baba, Yoshiro

114 C p.
artikel
61 Effect of integrated anneal optimizations of electroplated Cu thin films interconnects Wahab, Y.A.

114 C p.
artikel
62 Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis Du, H.

114 C p.
artikel
63 Effect of thermal and vibrational combined ageing on QFN terminal pads solder reliability Arabi, F.

114 C p.
artikel
64 Effects of alloying elements in high reliability copper wire bond material for high temperature applications Eto, M.

114 C p.
artikel
65 Effects of anisotropy on the reliability of TSV microstructure Fan, Zhengwei

114 C p.
artikel
66 Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction Janioud, P.

114 C p.
artikel
67 Effects of solder degradation on the die temperature measurement via internal gate resistance Kawahara, C.

114 C p.
artikel
68 Evaluating the soft error sensitivity of a GPU-based SoC for matrix multiplication León, Germán

114 C p.
artikel
69 Evaluation based on performance and failure of PV system in 10 years field-aged 1 MW PV power plant Oh, Wonwook

114 C p.
artikel
70 Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation Galy, Ph.

114 C p.
artikel
71 Experimental setup to monitor non-destructive single events triggered by ionizing radiation in power devices Pocaterra, Marco

114 C p.
artikel
72 Exploration of gate trench module for vertical GaN devices Ruzzarin, M.

114 C p.
artikel
73 Extraction of wearout model parameters using on-line test of an SRAM Hsu, Shu-Han

114 C p.
artikel
74 Failure-analysis method of soldering interfaces in light-emitting diode packages based on time-domain transient thermal response Ma, Byongjin

114 C p.
artikel
75 Fault diagnosis of cracks in crystalline silicon photovoltaic modules through I-V curve Ma, Mingyao

114 C p.
artikel
76 Faults and reliability analysis of negative resistance converter traction power system Yang, Xiaofeng

114 C p.
artikel
77 FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor Waqar, Muhammad

114 C p.
artikel
78 FEM-aided damage model calibration method for experimental results Fogsgaard, M.B.

114 C p.
artikel
79 Field emission induced-damage in the actuation paths of MEMS capacitive structures Theocharis, J.

114 C p.
artikel
80 FPGA-based reliability testing and analysis for 3D NAND flash memory Wei, Debao

114 C p.
artikel
81 Fretting wear reliability assessment methodology of gold-plated electrical connectors considering manufacture parameters distribution Ling, S.

114 C p.
artikel
82 GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress Caria, A.

114 C p.
artikel
83 Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode Castellazzi, A.

114 C p.
artikel
84 Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode Takamori, Taro

114 C p.
artikel
85 Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs Borghese, A.

114 C p.
artikel
86 Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs Nakayama, T.

114 C p.
artikel
87 Gold wire bond study for automotive application Papadopoulos, C.

114 C p.
artikel
88 Health monitoring of mechanically fatigued flexible lithium ion battery by electrochemical impedance spectroscopy Kim, Jae-Yeon

114 C p.
artikel
89 Heavy ion and proton induced single event upsets in 3D SRAM He, Z.

114 C p.
artikel
90 Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices Liu, T.Q.

114 C p.
artikel
91 Hot-Carrier degradation in P- and N-channel EDMOS for smart power application Li, Shuang

114 C p.
artikel
92 Hot-carrier-injection resilient RF power amplifier using adaptive bias Pazos, S.M.

114 C p.
artikel
93 IGBT aging monitoring and remaining lifetime prediction based on long short-term memory (LSTM) networks Li, Wanping

114 C p.
artikel
94 Impact of crystalline orientation of lead-free solder joints on thermomechanical response and reliability of ball grid array components Ben Romdhane, E.

114 C p.
artikel
95 Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices Xi, K.

114 C p.
artikel
96 Impact of modulation strategies on the lifetime estimation of impedance source inverter in wind power system Fan, Peng

114 C p.
artikel
97 Impact of stray-inductance imbalance on short-circuit capability of multi-chip SiC power modules Chou, K.

114 C p.
artikel
98 Impact of the sensing current density on PN-junction based temperature estimation methods for Si and SiC power devices Hoffmann, Felix

114 C p.
artikel
99 Improving GPU register file reliability with a comprehensive ISA extension Gonçalves, M.M.

114 C p.
artikel
100 Influence of CdTe solar cell properties on stability at high temperatures Bertoncello, Matteo

114 C p.
artikel
101 Influence of temperature and humidity on power cycling capability of power modules Wuest, Felix

114 C p.
artikel
102 Interface characterization of CuCu ball bonds by a fast shear fatigue method Czerny, B.

114 C p.
artikel
103 Investigation of critical parameters in power supplies components failure due to electric pulse Curos, L.

114 C p.
artikel
104 Investigation of multiple short-circuits characteristics and reliability in SiC power devices used for a start-up method of power converters Mannen, Tomoyuki

114 C p.
artikel
105 Investigation of the current collapse behaviour in GaN power HEMTs with highly adjustable pulse and measurement concept Goller, M.

114 C p.
artikel
106 Investigation of the mechanical properties of corroded sintered silver layers by using Nanoindentation Kolbinger, E.

114 C p.
artikel
107 Life-cycle reliability design optimization of high-power DC electromagnetic devices based on time-dependent non-probabilistic convex model process Ye, Xuerong

114 C p.
artikel
108 Lithium-ion battery performance degradation evaluation in dynamic operating conditions based on a digital twin model Qu, X.

114 C p.
artikel
109 Lithium-ion battery SoH estimation based on incremental capacity peak tracking at several current levels for online application Maures, M.

114 C p.
artikel
110 Magnetic field imaging and light induced capacitance alteration for failure analysis of Cu-TSV interconnects De Wolf, Ingrid

114 C p.
artikel
111 0.5 μm GaN RF power bar technology space evaluation Van de Casteele, J.

114 C p.
artikel
112 Microstructure evolutions upon Ni(Pt) silicidation and the different responses to the metal etch Qin, Wentao

114 C p.
artikel
113 Mission profile-oriented configuration of PV panels for lifetime and cost-efficiency of PV inverters Wang, Dingyi

114 C p.
artikel
114 Mitigating single event upset of FPGA for the onboard bus control of satellite Cui, Xiuhai

114 C p.
artikel
115 Mode identification for reliability improvement of MMC Fan, X.F.

114 C p.
artikel
116 Modeling and analysis of the catastrophic failure and degradation data Kim, Seung-Hyun

114 C p.
artikel
117 Modeling and fault diagnosis of multi-phase winding inter-turn short circuit for five-phase PMSM based on improved trust region Yang, J.W.

114 C p.
artikel
118 Modular dynamic pulse stress test system for discrete high power semiconductors Patmanidis, K.

114 C p.
artikel
119 Monitoring of parameter stability of SiC MOSFETs in real application tests Sievers, M.

114 C p.
artikel
120 Multimodal fault-tolerant control for single-phase cascaded off-grid PV-storage system with PV failure using hybrid modulation Liu, Zhao

114 C p.
artikel
121 Multiple failure mode identification of SiC planar MOSFETs in short-circuit operation Wang, Bixuan

114 C p.
artikel
122 New definition of critical energy for SiC MOSFET robustness under short circuit operations: The repetitive critical energy Chen, C.

114 C p.
artikel
123 New power module concept in PCB-embedded technology with silver sintering die attach Tablati, A.

114 C p.
artikel
124 Non-destructive automatic die-level defect detection of counterfeit microelectronics using machine vision Ahmadi, B.

114 C p.
artikel
125 Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy Nardo, A.

114 C p.
artikel
126 Novel failure traces beyond the barrier on the floating device Lee, Gwang Wook

114 C p.
artikel
127 OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution Canato, E.

114 C p.
artikel
128 Online junction temperature estimation using integrated NTC thermistor in IGBT modules for PMSM drives Ma, Mingyao

114 C p.
artikel
129 On the analysis of radiation-induced failures in the AXI interconnect module De Sio, C.

114 C p.
artikel
130 On the replacement of water as coupling medium in scanning acoustic microscopy analysis of sensitive electronics components Hertl, M.

114 C p.
artikel
131 On the use of soft gamma radiation to characterize the pre-breakdown carrier multiplication in SiC power MOSFETs and its correlation to the TCR failure rate as measured by neutron irradiation Ciappa, Mauro

114 C p.
artikel
132 Optimal sampling for accelerated testing in 14 nm FinFET ring oscillators Hsu, Shu-Han

114 C p.
artikel
133 Packaging reliability estimation of high-power device modules by utilizing silver sintering technology Lee, Chang-Chun

114 C p.
artikel
134 Parameters sensitivity analysis of silicon carbide buck converters to extract features for condition monitoring Loghmani Moghaddam Toussi, A.

114 C p.
artikel
135 Peculiar failure mechanisms in GaN power transistors Vanzi, M.

114 C p.
artikel
136 Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET Busatto, G.

114 C p.
artikel
137 Prediction of solar particle events with SRAM-based soft error rate monitor and supervised machine learning Chen, J.

114 C p.
artikel
138 Profiling of carriers in a 3D flash memory cell with nanometer-level resolution using scanning nonlinear dielectric microscopy Hirota, J.

114 C p.
artikel
139 Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications Lama, G.

114 C p.
artikel
140 Reliability analysis of excitation control modes of a synchronous condenser during grid-integration at the speed-falling stage Wang, Puyu

114 C p.
artikel
141 Reliability-driven pin assignment optimization to improve in-orbit soft-error rate Aguiar, Y.Q.

114 C p.
artikel
142 Reliability in the era of electrification in aviation: A systems approach Emmanouil, K.

114 C p.
artikel
143 Reliability limitations from crystal defects in thick GaN epitaxial layers Christou, Aris

114 C p.
artikel
144 Reliability of H-terminated diamond MESFETs in high power dissipation operating condition De Santi, C.

114 C p.
artikel
145 Reliability-oriented optimization of aluminum electrolytic capacitor considering uncertain mission profile Niu, Hao

114 C p.
artikel
146 Reliability prediction of FinFET FPGAs by MTOL Bender, E.

114 C p.
artikel
147 Reliability study of PCB-embedded power dies using solderless pressed metal foam Bensebaa, S.

114 C p.
artikel
148 Reliability test for subsea power semiconductors Guillon, David

114 C p.
artikel
149 Reliable endpoint technique on Si trenching for backside circuit edit Tanaka, Hideo

114 C p.
artikel
150 Research on 3D TLC NAND flash reliability from the perspective of threshold voltage distribution Wei, Debao

114 C p.
artikel
151 Robustness of pressure sensors with piezoresistive nanogauges up to 522 °C Koumela, A.

114 C p.
artikel
152 Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate Tallarico, A.N.

114 C p.
artikel
153 Row hammer avoidance analysis of DDR3 SDRAM Versen, M.

114 C p.
artikel
154 Separation of electron and hole trapping components of PBTI in SiON nMOS transistors Waltl, Michael

114 C p.
artikel
155 Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction Hasegawa, K.

114 C p.
artikel
156 Simplified hybrid reliability simulation approach of a VSC DC grid with integration of an improved DC current flow controller Wang, Puyu

114 C p.
artikel
157 Single-event induced failure mode of PWM in DC/DC converter Gao, J.

114 C p.
artikel
158 Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature Zhang, Junjun

114 C p.
artikel
159 Single-pulse observation of photoemission during avalanche breakdown in insulated gate bipolar transistor Endo, Koichi

114 C p.
artikel
160 SMART manufacturing through predictive FA Oberai, Ankush

114 C p.
artikel
161 Smart soiling sensor for PV modules Simonazzi, M.

114 C p.
artikel
162 Solving Time-dependent reliability-based design optimization by adaptive differential evolution algorithm and time-dependent polynomial chaos expansions (ADE-T-PCE) Ye, Xuerong

114 C p.
artikel
163 Spatial scale dependent impact of non-uniform interface defect distribution on field effect mobility in SiC MOSFETs Yamasue, K.

114 C p.
artikel
164 Study of moisture transport in silicone gel for IGBT modules Zhang, K.

114 C p.
artikel
165 Study of temperature dependence of breakdown voltage and AC TDDB reliability for thick insulator film deposited by plasma process Ohguro, T.

114 C p.
artikel
166 Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes Buttay, Cyril

114 C p.
artikel
167 System-level reliability assessment for a direct-drive PMSG based wind turbine with multiple converters Ye, Shuaichen

114 C p.
artikel
168 Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance Metayrek, Y.

114 C p.
artikel
169 Thermo-mechanical assessment of silver sintering for attaching power components in embedded PCB Arabi, F.

114 C p.
artikel
170 UIS performance and ruggedness of stand-alone and cascode SiC JFETs Agbo, S.N.

114 C p.
artikel
171 Ultrasonic monitoring performance degradation of lithium ion battery Kim, Jae-Yeon

114 C p.
artikel
172 Using of bond-wire resistance as aging indicator of semiconductor power modules Ibrahim, A.

114 C p.
artikel
173 Vibration-induced dynamic characteristics modeling of electrical contact resistance for connectors Xu, L.

114 C p.
artikel
174 Wear-out failure of an IGBT module in motor drives due to uneven thermal impedance of power semiconductor devices Vernica, I.

114 C p.
artikel
175 Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules Nazar, M.

114 C p.
artikel
                             175 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland