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Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications |
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Titel: |
Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications |
Auteur: |
Lama, G. Bourgeois, G. Bernard, M. Castellani, N. Sandrini, J. Nolot, E. Garrione, J. Cyrille, M.C. Navarro, G. Nowak, E. |
Verschenen in: |
Microelectronics reliability |
Paginering: |
Jaargang 114 () nr. C pagina's p. |
Jaar: |
2020 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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