| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test
|
Hayashi, Shin-Ichiro
|
|
|
126 |
C |
p.
|
artikel
|
| 2 |
A method to improve the accuracy and efficiency for metallized-film capacitor's reliability assessment using joint simulation
|
Yin, Jinpeng
|
|
|
126 |
C |
p.
|
artikel
|
| 3 |
Analysis of radiation-induced transient errors on 7 nm FinFET technology
|
Azimi, S.
|
|
|
126 |
C |
p.
|
artikel
|
| 4 |
Analysis of the impact of power loss due to snail trails in a 95-kWp photovoltaic power system
|
Oh, Wonwook
|
|
|
126 |
C |
p.
|
artikel
|
| 5 |
Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate
|
Tang, Shun-Wei
|
|
|
126 |
C |
p.
|
artikel
|
| 6 |
Analyzing the impact of guard-ring on different dual-direction SCR by device simulation and TLP measurement
|
Wang, Yang
|
|
|
126 |
C |
p.
|
artikel
|
| 7 |
A new mixed hardening methodology applied to a 28 nm FDSOI 32-bits DSP subjected to gamma radiation
|
Acuña, A. Ureña
|
|
|
126 |
C |
p.
|
artikel
|
| 8 |
A novel double-sided cooling packaging structure of SiC-based half bridge module integrating the laminated busbar
|
Wang, Jianing
|
|
|
126 |
C |
p.
|
artikel
|
| 9 |
A novel material detection method using femtosecond laser, confocal imaging and image processing enabling endpointing in fast inspection of microelectronics
|
Phoulady, Adrian
|
|
|
126 |
C |
p.
|
artikel
|
| 10 |
A novel method for the assessment of surface charge density variance in capacitive RF-MEMS switches
|
Birmpiliotis, D.
|
|
|
126 |
C |
p.
|
artikel
|
| 11 |
Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures
|
Muñoz-Gorriz, J.
|
|
|
126 |
C |
p.
|
artikel
|
| 12 |
A testing method for evaluating shoot-through immunity of IGBTs in an inverter
|
Hasegawa, K.
|
|
|
126 |
C |
p.
|
artikel
|
| 13 |
Automated quantitative analysis of void morphology evolution in AgAg direct bonding interface after accelerated aging
|
Yu, Z.
|
|
|
126 |
C |
p.
|
artikel
|
| 14 |
Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection
|
Sagara, Mitsuhiko
|
|
|
126 |
C |
p.
|
artikel
|
| 15 |
Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons
|
Munteanu, D.
|
|
|
126 |
C |
p.
|
artikel
|
| 16 |
Behavioral modelling of PROFET™ devices for system-level simulation of mission profiles in automotive environment applications
|
Simonazzi, Marco
|
|
|
126 |
C |
p.
|
artikel
|
| 17 |
Calendar degradation of Li-ion batteries under high storage temperature based on electrochemical impedance spectroscopy
|
Sun, Yongquan
|
|
|
126 |
C |
p.
|
artikel
|
| 18 |
Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays
|
Bourgeois, G.
|
|
|
126 |
C |
p.
|
artikel
|
| 19 |
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature
|
Chiocchetta, F.
|
|
|
126 |
C |
p.
|
artikel
|
| 20 |
Comparison of the instability in device characteristics for thin-film SOI power n- and p-MOSFETs at high temperature under AC stress
|
Yamanishi, Riki
|
|
|
126 |
C |
p.
|
artikel
|
| 21 |
Conducted EMI susceptibility analysis of a COTS processor as function of thermal cycling and overvoltage stresses
|
Soares, Matheus Fay
|
|
|
126 |
C |
p.
|
artikel
|
| 22 |
Constitutive equations for strain rate and temperature dependent mechanical behaviour of porous Ag-sintered joints in electronic packages
|
Lederer, M.
|
|
|
126 |
C |
p.
|
artikel
|
| 23 |
DC-side faults mechanism analysis and causes location for two-stage photovoltaic grid connected inverters
|
Ma, Mingyao
|
|
|
126 |
C |
p.
|
artikel
|
| 24 |
Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate
|
Zenari, M.
|
|
|
126 |
C |
p.
|
artikel
|
| 25 |
Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system
|
Yu, Jian
|
|
|
126 |
C |
p.
|
artikel
|
| 26 |
Diagnosis of open-phase fault of five-phase permanent magnet synchronous motor by harmonic current analysis
|
Li, Tianxing
|
|
|
126 |
C |
p.
|
artikel
|
| 27 |
Editorial Board
|
|
|
|
126 |
C |
p.
|
artikel
|
| 28 |
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode
|
Casu, C.
|
|
|
126 |
C |
p.
|
artikel
|
| 29 |
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
|
Bertoncello, Matteo
|
|
|
126 |
C |
p.
|
artikel
|
| 30 |
Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon
|
Autran, J.L.
|
|
|
126 |
C |
p.
|
artikel
|
| 31 |
Error sensitivity study of FFT architectures implemented in FPGA
|
García-Astudillo, L.A.
|
|
|
126 |
C |
p.
|
artikel
|
| 32 |
Evaluating reliability through soft error triggered exceptions at ARM Cortex-A9 microprocessor
|
Aviles, Pablo M.
|
|
|
126 |
C |
p.
|
artikel
|
| 33 |
Evaluating softcore GPU in SRAM-based FPGA under radiation-induced effects
|
Braga, Giani
|
|
|
126 |
C |
p.
|
artikel
|
| 34 |
Evaluation of thermomechanical fatigue lifetime of BGA lead-free solder joints and impact of isothermal aging
|
Roumanille, Pierre
|
|
|
126 |
C |
p.
|
artikel
|
| 35 |
Failure case studies of fast ionization dynistors
|
Huang, Xinyuan
|
|
|
126 |
C |
p.
|
artikel
|
| 36 |
Fast cut-off, low I2T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch
|
Oumaziz, Amirouche
|
|
|
126 |
C |
p.
|
artikel
|
| 37 |
Fatigue crack evolution and effect analysis of Ag sintering die-attachment in SiC power devices under power cycling based on phase-field simulation
|
Su, Yutai
|
|
|
126 |
C |
p.
|
artikel
|
| 38 |
Fault diagnosis of PID in crystalline silicon photovoltaic modules through I-V curve
|
Ma, Mingyao
|
|
|
126 |
C |
p.
|
artikel
|
| 39 |
Fault location method of IGBT short-circuit for a grid-tied Neutral-Point-Clamped inverter system
|
Ma, Mingyao
|
|
|
126 |
C |
p.
|
artikel
|
| 40 |
FEM analysis of a HF coreless transformer for automotive applications
|
Daniele, Simone
|
|
|
126 |
C |
p.
|
artikel
|
| 41 |
From early microstructural evolution to intergranular crack propagation in SAC solders under thermomechanical fatigue
|
Ben Romdhane, E.
|
|
|
126 |
C |
p.
|
artikel
|
| 42 |
Gate stress reliability of a novel trench-based Triple Gate Transistor
|
Gay, R.
|
|
|
126 |
C |
p.
|
artikel
|
| 43 |
Generating and characterizing condensation phenomena in power modules
|
Schilling, O.
|
|
|
126 |
C |
p.
|
artikel
|
| 44 |
Hot-carrier evaluation of a zero-cost transistor developed via process optimization in an embedded non-volatile memory CMOS technology
|
Devoge, P.
|
|
|
126 |
C |
p.
|
artikel
|
| 45 |
Hot electron effects in AlGaN/GaN HEMTs during hard-switching events
|
Minetto, Andrea
|
|
|
126 |
C |
p.
|
artikel
|
| 46 |
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
|
Gao, Zhan
|
|
|
126 |
C |
p.
|
artikel
|
| 47 |
Impact of heat treatment on the lifetime of wire-bonded power modules
|
Brandelero, J.
|
|
|
126 |
C |
p.
|
artikel
|
| 48 |
Impact of place and route strategy on FPGA electromagnetic emission
|
Lara, Estevan L.
|
|
|
126 |
C |
p.
|
artikel
|
| 49 |
Impact of radiation-induced soft error on embedded cryptography algorithms
|
Bandeira, Vitor
|
|
|
126 |
C |
p.
|
artikel
|
| 50 |
Impact of single-defects on the variability of CMOS inverter circuits
|
Waltl, Michael
|
|
|
126 |
C |
p.
|
artikel
|
| 51 |
Impact of temperature on the corrosion of lead-free solder alloy during salt spray test
|
Akoda, K.E.
|
|
|
126 |
C |
p.
|
artikel
|
| 52 |
Impact of thermal interface material on power cycling lifetime of IGBT module
|
Cai, Jinhao
|
|
|
126 |
C |
p.
|
artikel
|
| 53 |
Impacts of carbon ions on SEU in SOI SRAM
|
Gao, J.
|
|
|
126 |
C |
p.
|
artikel
|
| 54 |
Improved deep learning based telemetry data anomaly detection to enhance spacecraft operation reliability
|
Yang, L.
|
|
|
126 |
C |
p.
|
artikel
|
| 55 |
Improved HV-H3TRB robustness of a 1700 V IGBT chip set in standard power modules
|
Peters, J.-H.
|
|
|
126 |
C |
p.
|
artikel
|
| 56 |
Improved reliability PERC PV modules with moth-eye nanostructured optical films using nano imprint lithography
|
Oh, Kyoung-Suk
|
|
|
126 |
C |
p.
|
artikel
|
| 57 |
Improving failure rates in pulsed SOT-MRAM switching by reinforcement learning
|
Ender, J.
|
|
|
126 |
C |
p.
|
artikel
|
| 58 |
Influence of different test strategies on the power cycling test results of 6.5 kV SiC MOSFETs
|
Gerlach, M.
|
|
|
126 |
C |
p.
|
artikel
|
| 59 |
Influence of ionizing radiation on the conducted electromagnetic emission of integrated circuits
|
Czepl, N.
|
|
|
126 |
C |
p.
|
artikel
|
| 60 |
Influence of phosphorus diffusion on the SiO2/4H-SiC (0001) interface during poly gate formation process
|
Wan, Caiping
|
|
|
126 |
C |
p.
|
artikel
|
| 61 |
Intrinsic ESD robustness on new high voltage N/PMOS devices in 28 nm FDSOI UTBB CMOS technology through TLP/VFTLP characterizations
|
Galy, Ph.
|
|
|
126 |
C |
p.
|
artikel
|
| 62 |
Investigating real-time control-flow error detection in hardware: How fast can we detect errors and take action?
|
Hoppe, Augusto
|
|
|
126 |
C |
p.
|
artikel
|
| 63 |
Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to olid-state circuit breakers
|
Lou, Zaiqi
|
|
|
126 |
C |
p.
|
artikel
|
| 64 |
Layout-based mitigation of single-event transient for monolithic 3D CMOS integrated circuits
|
Zhang, Junjun
|
|
|
126 |
C |
p.
|
artikel
|
| 65 |
Lifetime and degradation analysis of AgPt alloy thick film/AlN heater for semiconductor wafer annealing
|
Jeong, Jae-Seong
|
|
|
126 |
C |
p.
|
artikel
|
| 66 |
Local capacitance-voltage profiling and high voltage stress effect study of SiO2/SiC structures by time-resolved scanning nonlinear dielectric microscopy
|
Yamasue, K.
|
|
|
126 |
C |
p.
|
artikel
|
| 67 |
Local metal segregation as root cause for electrical shorts in highly doped pressure sensor devices
|
Simon-Najasek, M.
|
|
|
126 |
C |
p.
|
artikel
|
| 68 |
Long-term electrical stability of next generation LV Trench IGBT at Hitachi ABB Power Grids
|
Schneider, Nick
|
|
|
126 |
C |
p.
|
artikel
|
| 69 |
Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs
|
Wu, R.
|
|
|
126 |
C |
p.
|
artikel
|
| 70 |
Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications
|
Garba-Seybou, T.
|
|
|
126 |
C |
p.
|
artikel
|
| 71 |
Modelling of charge injection by multi-photon absorption in GaN-on-Si HEMTs for SEE testing
|
Ngom, C.
|
|
|
126 |
C |
p.
|
artikel
|
| 72 |
Morphology and reliability aspects of 40 nm eSTM™ architecture
|
Melul, Franck
|
|
|
126 |
C |
p.
|
artikel
|
| 73 |
Nano Ag sintering on Cu substrate assisted by self-assembled monolayers for high-temperature electronics packaging
|
Liu, Canyu
|
|
|
126 |
C |
p.
|
artikel
|
| 74 |
Nanoscale capacitance-voltage profiling of DC bias induced stress on a high-κ/SiO2/Si gate stack
|
Suzuki, Koharu
|
|
|
126 |
C |
p.
|
artikel
|
| 75 |
Online monitoring of IGBT modules based on creating the non-interventional monitoring environment
|
Ma, Mingyao
|
|
|
126 |
C |
p.
|
artikel
|
| 76 |
On-line temperature measurement during power cycle of PCB-embedded diode
|
Bensebaa, S.
|
|
|
126 |
C |
p.
|
artikel
|
| 77 |
On the evaluation of FPGA radiation benchmarks
|
Bricas, G.
|
|
|
126 |
C |
p.
|
artikel
|
| 78 |
On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation
|
Huang, Yifu
|
|
|
126 |
C |
p.
|
artikel
|
| 79 |
Optical characterizations of “P-down” bonded InP pump lasers
|
Gérard, S.
|
|
|
126 |
C |
p.
|
artikel
|
| 80 |
Optimal design of cyclic-stress accelerated life tests for lognormal lifetime distribution under type I censoring
|
Kim, Seung-Hyun
|
|
|
126 |
C |
p.
|
artikel
|
| 81 |
Performance analysis of indium antimonide thermophotovoltaic system with varied material and geometrical properties
|
Mohd Jasni, M.S.
|
|
|
126 |
C |
p.
|
artikel
|
| 82 |
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
|
Nardo, A.
|
|
|
126 |
C |
p.
|
artikel
|
| 83 |
PReCEP: Automatic insertion of Partial Redundancy based on Critical Error Probability
|
Nazar, Gabriel L.
|
|
|
126 |
C |
p.
|
artikel
|
| 84 |
Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis
|
|
|
|
126 |
C |
p.
|
artikel
|
| 85 |
PV mission profile simplification method for power devices subjected to arid climates
|
Fogsgaard, Martin Bendix
|
|
|
126 |
C |
p.
|
artikel
|
| 86 |
Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
|
Danković, D.
|
|
|
126 |
C |
p.
|
artikel
|
| 87 |
Recharging process of commercial floating-gate MOS transistor in dosimetry application
|
Ilić, Stefan D.
|
|
|
126 |
C |
p.
|
artikel
|
| 88 |
Recurrent neural networks model based reliability assessment of power semiconductors in PMSG converter
|
Liu, Shiyi
|
|
|
126 |
C |
p.
|
artikel
|
| 89 |
Relative importance of solder and wire bond defects on the maximum junction temperature of IGBT devices
|
Pichon, P.-Y.
|
|
|
126 |
C |
p.
|
artikel
|
| 90 |
Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating
|
Moultif, N.
|
|
|
126 |
C |
p.
|
artikel
|
| 91 |
Reliability assessment of film capacitors oriented by dependent and nonlinear degradation considering three-source uncertainties
|
Ye, Xuerong
|
|
|
126 |
C |
p.
|
artikel
|
| 92 |
Reliability of automotive and consumer MEMS sensors - An overview
|
Hommel, M.
|
|
|
126 |
C |
p.
|
artikel
|
| 93 |
Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation
|
Jouha, Wadia
|
|
|
126 |
C |
p.
|
artikel
|
| 94 |
Research on single event effect test of a RRAM memory and space flight demonstration
|
Lyu, He
|
|
|
126 |
C |
p.
|
artikel
|
| 95 |
Research on sintering process and thermal conductivity of hybrid nanosilver solder paste based on molecular dynamics simulation
|
Zhang, Zhongqing
|
|
|
126 |
C |
p.
|
artikel
|
| 96 |
Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device
|
Barazi, Yazan
|
|
|
126 |
C |
p.
|
artikel
|
| 97 |
Search for copper diffusion at hybrid bonding interface through chemical and electrical characterizations
|
Jourdon, Joris
|
|
|
126 |
C |
p.
|
artikel
|
| 98 |
Similarity based telemetry data recovery for enhancing operating reliability of satellite
|
Wu, Y.
|
|
|
126 |
C |
p.
|
artikel
|
| 99 |
Simulation based dynamic laser stimulation for failure analysis of analog and mixed-signal circuits
|
Melis, T.
|
|
|
126 |
C |
p.
|
artikel
|
| 100 |
Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module
|
Trajin, B.
|
|
|
126 |
C |
p.
|
artikel
|
| 101 |
Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology
|
Albany, Florent
|
|
|
126 |
C |
p.
|
artikel
|
| 102 |
Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs
|
Tang, Shun-Wei
|
|
|
126 |
C |
p.
|
artikel
|
| 103 |
Statistical analysis method for accelerated life testing with incomplete data and competing failure modes
|
Pan, Guangze
|
|
|
126 |
C |
p.
|
artikel
|
| 104 |
Study on the high-temperature triggering and holding characteristics of PDSOI SCR devices
|
Wang, J.X.
|
|
|
126 |
C |
p.
|
artikel
|
| 105 |
TCAD investigation of the transport of carriers deposited by alpha particles in silicon carbide power Schottky devices
|
Pocaterra, Marco
|
|
|
126 |
C |
p.
|
artikel
|
| 106 |
Temperature effects on the conducted emission of a high-side switch
|
Baptistat, N.
|
|
|
126 |
C |
p.
|
artikel
|
| 107 |
Thermal aging of power module assemblies based on ceramic heat sink and multilayers pressureless silver sintering
|
Botter, N.
|
|
|
126 |
C |
p.
|
artikel
|
| 108 |
Thermal monitoring of the stator winding insulating part by a reliable thermal model for failure mitigation
|
Guenenna, T.
|
|
|
126 |
C |
p.
|
artikel
|
| 109 |
Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization
|
Jouha, Wadia
|
|
|
126 |
C |
p.
|
artikel
|
| 110 |
Use of passive, quantitative EBIC to characterize device turn-on in 7 nm technology
|
Johnson, Gregory M.
|
|
|
126 |
C |
p.
|
artikel
|
| 111 |
Vertical GaN devices: Process and reliability
|
You, Shuzhen
|
|
|
126 |
C |
p.
|
artikel
|
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