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                             52 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies Fauquier, L.
 2017
 70 C p. 105-110
6 p.
 artikel
2 Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method Maida, Osamu
 2017
 70 C p. 203-206
4 p.
 artikel
3 Comprehensive effects of strained Ge1−xSnx and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel Lee, Chang-Chun
 2017
 70 C p. 145-150
6 p.
 artikel
4 Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion Yamada, Michihiro
 2017
 70 C p. 83-85
3 p.
 artikel
5 Displacement current of Au/p-diamond Schottky contacts Aoki, Toshichika
 2017
 70 C p. 207-212
6 p.
 artikel
6 Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates Kasahara, Kenji
 2017
 70 C p. 68-72
5 p.
 artikel
7 Effect of substrate type and temperature on the growth of thin Ru films by metal organic chemical vapor deposition Chiba, Hirokazu
 2017
 70 C p. 73-77
5 p.
 artikel
8 Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates Shiraishi, Takahisa
 2017
 70 C p. 239-245
7 p.
 artikel
9 Effect of V doping on initial growth of ZnO film on c-face sapphire substrate Kanematsu, Tomohiro
 2017
 70 C p. 229-233
5 p.
 artikel
10 Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode Yasuta, Kosuke
 2017
 70 C p. 173-177
5 p.
 artikel
11 Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N2O gas Enta, Yoshiharu
 2017
 70 C p. 63-67
5 p.
 artikel
12 Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration Taoka, Noriyuki
 2017
 70 C p. 139-144
6 p.
 artikel
13 Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating Motegi, Koya
 2017
 70 C p. 50-54
5 p.
 artikel
14 Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks Kanashima, T.
 2017
 70 C p. 260-264
5 p.
 artikel
15 Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating Ueno, Naofumi
 2017
 70 C p. 55-62
8 p.
 artikel
16 Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering Otsuka, Shintaro
 2017
 70 C p. 3-7
5 p.
 artikel
17 EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz Shimura, Yosuke
 2017
 70 C p. 133-138
6 p.
 artikel
18 Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction Yamamoto, Keisuke
 2017
 70 C p. 283-287
5 p.
 artikel
19 Formation and characterization of Ge1−x−y Si x Sn y/Ge1−xSnx/Ge1−x−ySixSny double heterostructures with strain-controlled Ge1−x−ySixSny layers Fukuda, Masahiro
 2017
 70 C p. 156-161
6 p.
 artikel
20 Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy Yamamoto, Yuji
 2017
 70 C p. 30-37
8 p.
 artikel
21 Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy Margetis, Joe
 2017
 70 C p. 38-43
6 p.
 artikel
22 Germanium-on-insulator virtual substrate for InGaP epitaxy Bao, Shuyu
 2017
 70 C p. 17-23
7 p.
 artikel
23 Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method Al Ahmed, Sheikh Rashel
 2017
 70 C p. 265-271
7 p.
 artikel
24 Homoepitaxial diamond chemical vapor deposition for ultra-light doping Teraji, T.
 2017
 70 C p. 197-202
6 p.
 artikel
25 Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties Takeuchi, Daichi
 2017
 70 C p. 183-187
5 p.
 artikel
26 Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse Ikeda, Akihiro
 2017
 70 C p. 193-196
4 p.
 artikel
27 Influence of crystallinity of as-deposited Ge film on formation of quantum dot in carbon-mediated solid-phase epitaxy Takeshima, Kaito
 2017
 70 C p. 178-182
5 p.
 artikel
28 Influence of N2 introduction on structural and optical properties of V-doped ZnO thin films grown by low-temperature reactive RF magnetron sputtering Suzuki, Tomoya
 2017
 70 C p. 223-228
6 p.
 artikel
29 In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS Durand, Aurèle
 2017
 70 C p. 99-104
6 p.
 artikel
30 Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs Lee, Chang-Chun
 2017
 70 C p. 254-259
6 p.
 artikel
31 Investigation on a source of dominant donor in vanadium-doped ZnO films grown by reactive RF magnetron sputtering Kawashima, Tomoyuki
 2017
 70 C p. 213-218
6 p.
 artikel
32 Ionization and diffusion of metal atoms under electric field at metal/insulator interfaces; First-principles study Asayama, Yoshihiro
 2017
 70 C p. 78-82
5 p.
 artikel
33 Large single-crystal Ge-on-insulator by thermally-assisted (~400°C) Si-seeded-pulse-laser annealing Sadoh, T.
 2017
 70 C p. 8-11
4 p.
 artikel
34 Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence Suda, Ryutaro
 2017
 70 C p. 44-49
6 p.
 artikel
35 Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Yoshikawa, Isao
 2017
 70 C p. 151-155
5 p.
 artikel
36 Low-temperature formation of self-assembled Ge quantum dots on Si(100) under high carbon mediation via solid-phase epitaxy Itoh, Yuhki
 2017
 70 C p. 167-172
6 p.
 artikel
37 Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy Terano, Akihisa
 2017
 70 C p. 92-98
7 p.
 artikel
38 Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy Murase, Shingo
 2017
 70 C p. 86-91
6 p.
 artikel
39 Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack Nagatomi, Yuta
 2017
 70 C p. 246-253
8 p.
 artikel
40 Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation Shih, Chun-Hsing
 2017
 70 C p. 272-278
7 p.
 artikel
41 Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1−xSnx and Sn interlayers Suzuki, Akihiro
 2017
 70 C p. 162-166
5 p.
 artikel
42 Optical and structural properties of CuCrO2 thin films on c-face sapphire substrate deposited by reactive RF magnetron sputtering Chiba, Hiroshi
 2017
 70 C p. 234-238
5 p.
 artikel
43 Photoluminescence of phosphorous doped Ge on Si (100) Yamamoto, Yuji
 2017
 70 C p. 111-116
6 p.
 artikel
44 Preface Washio, Katsuyoshi
 2017
 70 C p. 1-2
2 p.
 artikel
45 Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation Sasaki, Shogo
 2017
 70 C p. 188-192
5 p.
 artikel
46 Si1−xGex bulk single crystals for substrates of electronic devices Kinoshita, Kyoichi
 2017
 70 C p. 12-16
5 p.
 artikel
47 Strain Engineering in Highly Mismatched SiGe/Si Heterostructures Isa, Fabio
 2017
 70 C p. 117-122
6 p.
 artikel
48 Study on thermal solid-phase crystallization of amorphous ZnO thin films stacked on vanadium-doped ZnO films Watanabe, Akihiro
 2017
 70 C p. 219-222
4 p.
 artikel
49 Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique Chang, Wen Hsin
 2017
 70 C p. 123-126
4 p.
 artikel
50 Thermal stability of compressively strained Si/relaxed Si1-x C x heterostructures formed on Ar ion implanted Si (100) substrates Arisawa, You
 2017
 70 C p. 127-132
6 p.
 artikel
51 Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study Iizuka, Shota
 2017
 70 C p. 279-282
4 p.
 artikel
52 Use of high order precursors for manufacturing gate all around devices Hikavyy, A.
 2017
 70 C p. 24-29
6 p.
 artikel
                             52 gevonden resultaten
 
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