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Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies |
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Titel: |
Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies |
Auteur: |
Fauquier, L. Pelissier, B. Jalabert, D. Pierre, F. Hartmann, J.M. Rozé, F. Doloy, D. Le Cunff, D. Beitia, C. Baron, T. |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 70 (2017) nr. C pagina's 6 p. |
Jaar: |
2017 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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