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Journal description
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Details for article 13 of 52 found articles
| Title: |
Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating |
| Author: |
Motegi, Koya Ueno, Naofumi Sakuraba, Masao Osakabe, Yoshihiro Akima, Hisanao Sato, Shigeo |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 70 (2017) nr. C pages 5 p. |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 52 found articles
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