| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
About the influence of temperature operation and packaging stress on the threshold for catastrophic optical damage in laser diodes
|
Souto, Jorge
|
|
|
168 |
C |
p.
|
artikel
|
| 2 |
Active gate driver for current overshoot suppression of SiC+Si hybrid switches with dynamic gate current regulation
|
Liu, Ping
|
|
|
168 |
C |
p.
|
artikel
|
| 3 |
A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage
|
Zeng, Fanpeng
|
|
|
168 |
C |
p.
|
artikel
|
| 4 |
A geometry-scalable electrothermal compact circuit model of SiC merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events
|
Borghese, A.
|
|
|
168 |
C |
p.
|
artikel
|
| 5 |
A NBTI self-healing circuit for a 12 nm CMOS high-gain amplifier
|
Zhang, Jun-an
|
|
|
168 |
C |
p.
|
artikel
|
| 6 |
An integrated physical model and extant data based approach for fault diagnosis and failure prognosis: Application to a photovoltaic module
|
Mebarki, Nassima
|
|
|
168 |
C |
p.
|
artikel
|
| 7 |
A PMOS-embedded low-voltage triggered silicon controlled rectifier ESD protection device for 3.3V I/O application
|
Deng, Jun
|
|
|
168 |
C |
p.
|
artikel
|
| 8 |
A screening test of GaN-HEMTs for improvement of breakdown voltage uniformity
|
Saito, Wataru
|
|
|
168 |
C |
p.
|
artikel
|
| 9 |
Comparison of electro-thermal-mechanical stress in SiC MOSFETs under several short-circuit types
|
Yu, Bin
|
|
|
168 |
C |
p.
|
artikel
|
| 10 |
Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors
|
Tripathi, Ravi Nath
|
|
|
168 |
C |
p.
|
artikel
|
| 11 |
Degradation prediction of IGBT module based on CNN-LSTM network
|
Bai, Liangjun
|
|
|
168 |
C |
p.
|
artikel
|
| 12 |
Design and verification of silicon bridge in 2.5D advanced package based on universal chiplet interconnect express (UCIe)
|
Fan, Yuxuan
|
|
|
168 |
C |
p.
|
artikel
|
| 13 |
Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics
|
Greatti, Matteo
|
|
|
168 |
C |
p.
|
artikel
|
| 14 |
Editorial Board
|
|
|
|
168 |
C |
p.
|
artikel
|
| 15 |
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs
|
Cioni, M.
|
|
|
168 |
C |
p.
|
artikel
|
| 16 |
Electronics authentication using electrical measurements and machine learning
|
Carta, S.
|
|
|
168 |
C |
p.
|
artikel
|
| 17 |
ESD Human Body Model step stress distributions of GaN HEMTs and the correlation with one level test results
|
van der Berg, R.A.
|
|
|
168 |
C |
p.
|
artikel
|
| 18 |
Evaluation of the impact of body bias on the threshold voltage drift of planar SiO2 transistors
|
Waltl, Michael
|
|
|
168 |
C |
p.
|
artikel
|
| 19 |
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase
|
Fraccaroli, Riccardo
|
|
|
168 |
C |
p.
|
artikel
|
| 20 |
Evidence of resistive switching in SiNx thin films for MEMS capacitors: The role of metal contacts
|
Theocharis, J.
|
|
|
168 |
C |
p.
|
artikel
|
| 21 |
Failure analysis and reliability assessment of gold-plated fuzz buttons in elevated temperature
|
Zhang, L.
|
|
|
168 |
C |
p.
|
artikel
|
| 22 |
Failure modes competition and long-term reliability in the isothermal aging of sintered Cu joints
|
Xin, Jianbo
|
|
|
168 |
C |
p.
|
artikel
|
| 23 |
Fast and high-resolution X-ray nano tomography for failure analysis in advanced packaging
|
Dreier, T.
|
|
|
168 |
C |
p.
|
artikel
|
| 24 |
Fast reverse engineering of chips using lasers, Focused Ion Beams, and confocal and scanning electron microscopy
|
Maniscalco, Matthew
|
|
|
168 |
C |
p.
|
artikel
|
| 25 |
Gate lifetime investigation at low temperature for p-GaN HEMT
|
Alam, M.
|
|
|
168 |
C |
p.
|
artikel
|
| 26 |
Heterogeneity-induced thermal mismatch in BGA interconnects: Insights from mechanical-thermal finite element modeling
|
Chu, Liu
|
|
|
168 |
C |
p.
|
artikel
|
| 27 |
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate
|
Longato, S.L.
|
|
|
168 |
C |
p.
|
artikel
|
| 28 |
Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy
|
Adlmaier, T.
|
|
|
168 |
C |
p.
|
artikel
|
| 29 |
Improvement of sensitivity for power cycle degradation by a new device structure
|
Okame, Koki
|
|
|
168 |
C |
p.
|
artikel
|
| 30 |
Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements
|
Marcuzzi, A.
|
|
|
168 |
C |
p.
|
artikel
|
| 31 |
Investigation of humidity protection behavior of protective coatings on PCB with components
|
Mantis, Ioannis
|
|
|
168 |
C |
p.
|
artikel
|
| 32 |
Investigation of the long-term dynamic R DS(on) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions
|
Rauf, Fawad
|
|
|
168 |
C |
p.
|
artikel
|
| 33 |
Lifetime prediction for power modules in wind-energy converters based on temperature variations in a large area substrate solder connection
|
Zöllner, Nils
|
|
|
168 |
C |
p.
|
artikel
|
| 34 |
Localization enhancement in quantitative thermal lock-in analysis using spatial phase evaluation
|
Brand, S.
|
|
|
168 |
C |
p.
|
artikel
|
| 35 |
Localization of heavy doping missing defect in MOSFET by the combined use of nanoprobing analysis and SCM technique
|
Zheng, Shijun
|
|
|
168 |
C |
p.
|
artikel
|
| 36 |
Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures
|
Caria, A.
|
|
|
168 |
C |
p.
|
artikel
|
| 37 |
New statistical analysis methodology to forecast the memory cell behavior before reliability test
|
Perrin, S.
|
|
|
168 |
C |
p.
|
artikel
|
| 38 |
On the influence of the porosity and homogeneity of sintered die-attach layers on the power cycling performance
|
Mikutta, L.
|
|
|
168 |
C |
p.
|
artikel
|
| 39 |
On the validity of rainflow counting-based lifetime assessment for power electronics assembly
|
Zhao, D.
|
|
|
168 |
C |
p.
|
artikel
|
| 40 |
Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications
|
Zunarelli, L.
|
|
|
168 |
C |
p.
|
artikel
|
| 41 |
PBO delamination and RDL corrosion detection on WLCSP package products
|
Bidaj, K.
|
|
|
168 |
C |
p.
|
artikel
|
| 42 |
Reliability and failure analysis of AlGaN/GaN HEMT with NiPtAu and PtAu gate
|
Dammann, M.
|
|
|
168 |
C |
p.
|
artikel
|
| 43 |
Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products
|
Jeong, U.H.
|
|
|
168 |
C |
p.
|
artikel
|
| 44 |
Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations
|
Guo, Zijian
|
|
|
168 |
C |
p.
|
artikel
|
| 45 |
Research on the degradation of contact resistance of wire-spring contacts in different wear condition
|
Xu, Le
|
|
|
168 |
C |
p.
|
artikel
|
| 46 |
Resonant fatigue test performance of battery pack connections using wire bonding
|
Wei, Xing
|
|
|
168 |
C |
p.
|
artikel
|
| 47 |
Response of the bipolar voltage regulator under neutron irradiation and consecutive pulsed gamma irradiation
|
Li, Ruibin
|
|
|
168 |
C |
p.
|
artikel
|
| 48 |
Risk of CuxO phase penetration between the Ag plating layer and Cu during high-temperature reliability testing of interfaces bonded to cold sintered Ag nano-porous sheets on direct Ag-plated Cu substrates
|
Kim, YehRi
|
|
|
168 |
C |
p.
|
artikel
|
| 49 |
RRAMulator: An efficient FPGA-based emulator for RRAM crossbar with device variability and energy consumption evaluation
|
Wen, Jianan
|
|
|
168 |
C |
p.
|
artikel
|
| 50 |
SMART protection design of automotive power distribution systems with temperature-based electronic fuses: Mathematical background, design guidelines and drawbacks of energy-based methods
|
Bernardoni, M.
|
|
|
168 |
C |
p.
|
artikel
|
| 51 |
Solder joint reliability - glass core substrate versus organic core substrate
|
Lau, John H.
|
|
|
168 |
C |
p.
|
artikel
|
| 52 |
Sorption getter characterization under wafer-level packaging (WLP) conditions
|
Duchemin, H.
|
|
|
168 |
C |
p.
|
artikel
|
| 53 |
Stress–strain analysis and prediction of WLCSP solder joints under bending–torsion coupled loading
|
Huang, Lixiang
|
|
|
168 |
C |
p.
|
artikel
|
| 54 |
Studies on Joint failure model of negative bias temperature instability and hot carrier degradation
|
Wu, Zhenyu
|
|
|
168 |
C |
p.
|
artikel
|
| 55 |
System in package: Advanced FA techniques to minimize analysis time and cost
|
Szász, K.
|
|
|
168 |
C |
p.
|
artikel
|
| 56 |
The behaviour of 350 V GaN HEMTs during heavy ion irradiations
|
Velardi, F.
|
|
|
168 |
C |
p.
|
artikel
|
| 57 |
Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires
|
Carluccio, R.
|
|
|
168 |
C |
p.
|
artikel
|
| 58 |
Thermal management of automotive radar: Overcoming design challenges in constrained environments
|
Oh, Myong Hun
|
|
|
168 |
C |
p.
|
artikel
|
| 59 |
Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions
|
Xie, Dong
|
|
|
168 |
C |
p.
|
artikel
|
| 60 |
Toward understanding the impacts of dynamic Ron on the efficiency in GaN-based AC-DC flyback converter
|
Chang, Chih-Yao
|
|
|
168 |
C |
p.
|
artikel
|
| 61 |
Understanding improved pitting corrosion resistance under high temperature application leading to a newly developed palladium coated copper wire
|
Araki, Noritoshi
|
|
|
168 |
C |
p.
|
artikel
|
| 62 |
Vertical scale-down of Cu/low-k interconnect development for BEOL reliability improvement of 12nm DRAM
|
Lee, J.H.
|
|
|
168 |
C |
p.
|
artikel
|
| 63 |
Wire bonding failure characterization of an IGBT based power module through impedance analysis
|
Vidal, P.-E.
|
|
|
168 |
C |
p.
|
artikel
|
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