Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             136 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated Life Test of high luminosity blue LEDs Nogueira, E.
 2016
 64 C p. 631-634
4 p.
 artikel
2 Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM Ranjan, A.
 2016
 64 C p. 172-178
7 p.
 artikel
3 An in depth analysis of pull-up capacitance-voltage characteristic for dielectric charging assessment of MEMS capacitive switches Koutsoureli, M.
 2016
 64 C p. 688-692
5 p.
 artikel
4 A novel correlative model of failure mechanisms for evaluating MEMS devices reliability Li, Yaqiu
 2016
 64 C p. 669-675
7 p.
 artikel
5 Application of Fast Laser Deprocessing Techniques on large cross-sectional view area sample with FIB-SEM dual beam system Zhao, Y.Z.
 2016
 64 C p. 362-366
5 p.
 artikel
6 Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors Oberhoff, S.
 2016
 64 C p. 656-659
4 p.
 artikel
7 Application of laser deprocessing technique in PFA on chemical over-etched on bond-pad issue Yap, H.H.
 2016
 64 C p. 357-361
5 p.
 artikel
8 Application of the defect clustering model for forming, SET and RESET statistics in RRAM devices Raghavan, Nagarajan
 2016
 64 C p. 54-58
5 p.
 artikel
9 A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI Wang, Y.
 2016
 64 C p. 26-30
5 p.
 artikel
10 A run-time built-in approach of TID test in SRAM based FPGAs Ma, Ning
 2016
 64 C p. 42-47
6 p.
 artikel
11 Automatic process for time-frequency scan of VLSI Boscaro, A.
 2016
 64 C p. 299-305
7 p.
 artikel
12 Automatized failure analysis of tungsten coated TSVs via scanning acoustic microscopy Grünwald, E.
 2016
 64 C p. 370-374
5 p.
 artikel
13 Avalanche robustness of SiC Schottky diode Dchar, Ilyas
 2016
 64 C p. 494-501
8 p.
 artikel
14 Body diode reliability investigation of SiC power MOSFETs Fayyaz, A.
 2016
 64 C p. 530-534
5 p.
 artikel
15 Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes Souto, J.
 2016
 64 C p. 627-630
4 p.
 artikel
16 Channel width dependence of AC stress on bulk nMOSFETs Son, Donghee
 2016
 64 C p. 194-198
5 p.
 artikel
17 Charging–discharging characteristics of a wound aluminum polymer capacitor Jeong, U.H.
 2016
 64 C p. 447-452
6 p.
 artikel
18 Chemical rate phenomenon approach applied to lithium battery capacity fade estimation Baghdadi, I.
 2016
 64 C p. 134-139
6 p.
 artikel
19 Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT Reigosa, P.D.
 2016
 64 C p. 524-529
6 p.
 artikel
20 Component Reliability Importance assessment on complex systems using Credible Improvement Potential Catelani, Marcantonio
 2016
 64 C p. 113-119
7 p.
 artikel
21 Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight Shubhakar, K.
 2016
 64 C p. 204-209
6 p.
 artikel
22 Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs Benvegnù, A.
 2016
 64 C p. 535-540
6 p.
 artikel
23 Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy Herms, M.
 2016
 64 C p. 330-335
6 p.
 artikel
24 Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures Broas, M.
 2016
 64 C p. 541-546
6 p.
 artikel
25 Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors Lee, Sang Myung
 2016
 64 C p. 84-87
4 p.
 artikel
26 Creeping corrosion of copper on printed circuit board assemblies Vogel, G.
 2016
 64 C p. 650-655
6 p.
 artikel
27 Cross-sectional nanoprobing fault isolation technique on submicron devices Tan, P.K.
 2016
 64 C p. 321-325
5 p.
 artikel
28 Current imaging, EBIC/EBAC, and electrical probing combined for fast and reliable in situ electrical fault isolation Kleindiek, Stephan
 2016
 64 C p. 313-316
4 p.
 artikel
29 Degradation and recovery of variability due to BTI Schlünder, Christian
 2016
 64 C p. 179-184
6 p.
 artikel
30 Degradation of InGaN-based LEDs related to charge diffusion and build-up La Grassa, M.
 2016
 64 C p. 614-616
3 p.
 artikel
31 Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes De Santi, C.
 2016
 64 C p. 623-626
4 p.
 artikel
32 Delamination of polyimide/Cu films under mixed mode loading Walter, T.
 2016
 64 C p. 281-286
6 p.
 artikel
33 Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy Brand, S.
 2016
 64 C p. 341-345
5 p.
 artikel
34 Detection of cracks in multilayer ceramic capacitors by X-ray imaging Andersson, C.
 2016
 64 C p. 352-356
5 p.
 artikel
35 Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules Ortiz Gonzalez, J.
 2016
 64 C p. 434-439
6 p.
 artikel
36 Device instability of amorphous InGaZnO thin film transistors with transparent source and drain Kim, Sang Min
 2016
 64 C p. 575-579
5 p.
 artikel
37 Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies Kerber, A.
 2016
 64 C p. 145-151
7 p.
 artikel
38 Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness Koutsoureli, M.
 2016
 64 C p. 660-664
5 p.
 artikel
39 DRES: Data recovery for condition monitoring to enhance system reliability Liu, Liansheng
 2016
 64 C p. 125-129
5 p.
 artikel
40 Early detection and prediction of HKMG SRAM HTOL performance by WLR PBTI tests Chien, Wei-Ting Kary
 2016
 64 C p. 185-188
4 p.
 artikel
41 Early life field failures in modern automotive electronics – An overview; root causes and precautions Jacob, P.
 2016
 64 C p. 79-83
5 p.
 artikel
42 Editorial Board 2016
 64 C p. IFC-
1 p.
 artikel
43 Editorial: ESREF 2016 Petzold, Matthias
 2016
 64 C p. 1-
1 p.
 artikel
44 Effect of H/Ar treatment on ZnO:B transparent conducting oxide for flexible a-Si:H/μc-Si:H photovoltaic modules under damp heat stress Jeong, Jae-Seong
 2016
 64 C p. 640-645
6 p.
 artikel
45 Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode Divay, A.
 2016
 64 C p. 585-588
4 p.
 artikel
46 Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor Auersperg, J.
 2016
 64 C p. 665-668
4 p.
 artikel
47 Effects of salt spray test on lead-free solder alloy Guédon-Gracia, A.
 2016
 64 C p. 242-247
6 p.
 artikel
48 Effects of stress-loading test methods on the degradation of light-emitting diode modules Cai, Miao
 2016
 64 C p. 635-639
5 p.
 artikel
49 Effects of voltage stress on the single event upset (SEU) response of 65nm flip flop Chua, C.T.
 2016
 64 C p. 199-203
5 p.
 artikel
50 Efficient reliability evaluation methodologies for combinational circuits Cai, Hao
 2016
 64 C p. 19-25
7 p.
 artikel
51 Electrical analysis on implantation-related defect by nanoprobing methodology Chen, C.Q.
 2016
 64 C p. 317-320
4 p.
 artikel
52 Electromagnetic susceptibility characterization of double SOI device Li, B.
 2016
 64 C p. 168-171
4 p.
 artikel
53 Elemental characterisation of sub 20nm structures in devices using new SEM-EDS technology Sagar, J.T.
 2016
 64 C p. 367-369
3 p.
 artikel
54 End of life and acceleration modelling for power diodes under high temperature reverse bias stress Schilling, O.
 2016
 64 C p. 458-463
6 p.
 artikel
55 ESD tests on 850nm GaAs-based VCSELs Vanzi, M.
 2016
 64 C p. 617-622
6 p.
 artikel
56 Evaluation of potential-induced degradation in crystalline Si solar cells using Na fault injection Oh, Wonwook
 2016
 64 C p. 646-649
4 p.
 artikel
57 Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests Belaïd, M.A.
 2016
 64 C p. 93-97
5 p.
 artikel
58 Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs Buffolo, M.
 2016
 64 C p. 610-613
4 p.
 artikel
59 [131] Experimental study of the short-circuit robustness of 600V E-mode GaN transistors Landel, M.
 2016
 64 C p. 560-565
6 p.
 artikel
60 Failure mechanisms and precautions in plug connectors and relays Jacob, P.
 2016
 64 C p. 693-698
6 p.
 artikel
61 Failure rate calculation method for high power devices in space applications at low earth orbit Dashdondog, Erdenebaatar
 2016
 64 C p. 502-506
5 p.
 artikel
62 Fast and trusted intrinsic stress measurement to facilitate improved reliability assessments Vogel, D.
 2016
 64 C p. 276-280
5 p.
 artikel
63 Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process Martin, A.
 2016
 64 C p. 2-12
11 p.
 artikel
64 Fatigue life prediction model for accelerated testing of electronic components under non-Gaussian random vibration excitations Jiang, Yu
 2016
 64 C p. 120-124
5 p.
 artikel
65 Fatigue testing method for fine bond wires in an LQFP package Czerny, B.
 2016
 64 C p. 270-275
6 p.
 artikel
66 Fault isolation at P/N junction by nanoprober Liu, Wan-Yi
 2016
 64 C p. 387-389
3 p.
 artikel
67 FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects Calienes Bartra, W.E.
 2016
 64 C p. 152-157
6 p.
 artikel
68 FESeR: A data-driven framework to enhance sensor reliability for the system condition monitoring Liu, Liansheng
 2016
 64 C p. 681-687
7 p.
 artikel
69 FPGA LUT delay degradation due to HCI: Experiment and simulation results Naouss, M.
 2016
 64 C p. 31-35
5 p.
 artikel
70 Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment Huang, J.
 2016
 64 C p. 390-392
3 p.
 artikel
71 Gate oxide degradation of SiC MOSFET under short-circuit aging tests Mbarek, S.
 2016
 64 C p. 415-418
4 p.
 artikel
72 77GHz automotive RADAR in eWLB package: From consumer to automotive packaging Haubner, G.
 2016
 64 C p. 699-704
6 p.
 artikel
73 Impact of non-linear capacitances on transient waveforms during system level ESD stress Escudié, F.
 2016
 64 C p. 88-92
5 p.
 artikel
74 Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories Canet, P.
 2016
 64 C p. 36-41
6 p.
 artikel
75 Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors Jang, Hyun Jun
 2016
 64 C p. 570-574
5 p.
 artikel
76 Improved etching recipe for exposing Cu wire allowing reliable stitch pull Stegink, R.
 2016
 64 C p. 375-378
4 p.
 artikel
77 Improving the short circuit ruggedness of IGBTs Tinschert, Lukas
 2016
 64 C p. 519-523
5 p.
 artikel
78 Influence of I/O oxide process on the NBTI performance of 28nm HfO2-based HKMG p-MOSFETs Chien, Wei-Ting Kary
 2016
 64 C p. 220-224
5 p.
 artikel
79 Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display Shin, Dongseok
 2016
 64 C p. 109-112
4 p.
 artikel
80 Internal processes in power semiconductors at virtual junction temperature measurement Chen, W.
 2016
 64 C p. 464-468
5 p.
 artikel
81 Investigating stress measurement capabilities of GHz Scanning Acoustic Microscopy for 3D failure analysis Khaled, A.
 2016
 64 C p. 336-340
5 p.
 artikel
82 Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability Gupta, N.
 2016
 64 C p. 235-241
7 p.
 artikel
83 Laser Voltage Probing (LVP) – Its value and the race against scaling Ganesh, Ulrike
 2016
 64 C p. 294-298
5 p.
 artikel
84 LED degradation: From component to system Hamon, B.
 2016
 64 C p. 599-604
6 p.
 artikel
85 Lifetime and manufacturability of integrated power electronics Randoll, R.
 2016
 64 C p. 513-518
6 p.
 artikel
86 Lifetime estimation of SiC MOSFETs under high temperature reverse bias test Uchida, Kosuke
 2016
 64 C p. 425-428
4 p.
 artikel
87 Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy Chinone, N.
 2016
 64 C p. 566-569
4 p.
 artikel
88 Magnetic field and current density imaging using off-line lock-in analysis Kögel, M.
 2016
 64 C p. 346-351
6 p.
 artikel
89 Mechanisms of metallization degradation in high power diodes Brincker, M.
 2016
 64 C p. 489-493
5 p.
 artikel
90 Microcontroller susceptibility variations to EFT burst during accelerated aging Wu, J.
 2016
 64 C p. 210-214
5 p.
 artikel
91 Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules Tsukuda, M.
 2016
 64 C p. 479-483
5 p.
 artikel
92 Mission-profile-based stress analysis of bond-wires in SiC power modules Bahman, A.S.
 2016
 64 C p. 419-424
6 p.
 artikel
93 Moisture absorption by molding compounds under extreme conditions: Impact on accelerated reliability tests Mavinkurve, A.
 2016
 64 C p. 254-258
5 p.
 artikel
94 Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory Choi, Jin Hyung
 2016
 64 C p. 215-219
5 p.
 artikel
95 Natural radiation events in CCD imagers at ground level Saad Saoud, T.
 2016
 64 C p. 68-72
5 p.
 artikel
96 Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain Lee, Jong Hoon
 2016
 64 C p. 580-584
5 p.
 artikel
97 Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions Simon-Najasek, M.
 2016
 64 C p. 248-253
6 p.
 artikel
98 Novel heatsink for power semiconductor module using high thermal conductivity graphite Yamada, Y.
 2016
 64 C p. 484-488
5 p.
 artikel
99 Numerical investigation of the effects of phosphorus on the mechanical responses of [1 1 0]-oriented silicon nano-wires Liu, B.
 2016
 64 C p. 225-229
5 p.
 artikel
100 Numerical study of destruction phenomena for punch-through IGBTs under unclamped inductive switching Tamaki, T.
 2016
 64 C p. 469-473
5 p.
 artikel
101 Online computation of IGBT on-state resistance for off-shelf three-phase two-level power converter systems Mohamed Halick, Mohamed Sathik
 2016
 64 C p. 379-386
8 p.
 artikel
102 On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology Viale, B.
 2016
 64 C p. 101-108
8 p.
 artikel
103 On the prediction of radiation-induced SETs in flash-based FPGAs Azimi, S.
 2016
 64 C p. 230-234
5 p.
 artikel
104 Optimization of contact metallizations for reliable wafer level AuSn bonds Vuorinen, V.
 2016
 64 C p. 676-680
5 p.
 artikel
105 Performance vs. reliability adaptive body bias scheme in 28nm & 14nm UTBB FDSOI nodes Ndiaye, C.
 2016
 64 C p. 158-162
5 p.
 artikel
106 Permanent and single event transient faults reliability evaluation EDA tool Aguiar, Y.Q. de
 2016
 64 C p. 63-67
5 p.
 artikel
107 Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications Beckmeier, D.
 2016
 64 C p. 189-193
5 p.
 artikel
108 Potentiality of healing techniques in hot-carrier damaged 28nm FDSOI CMOS nodes Bravaix, A.
 2016
 64 C p. 163-167
5 p.
 artikel
109 Power cycle reliability of Cu nanoparticle joints with mismatched coefficients of thermal expansion Ishizaki, T.
 2016
 64 C p. 287-293
7 p.
 artikel
110 Power cycling analysis method for high-voltage SiC diodes Banu, V.
 2016
 64 C p. 429-433
5 p.
 artikel
111 Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations Choi, U.M.
 2016
 64 C p. 403-408
6 p.
 artikel
112 Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices Arabi, F.
 2016
 64 C p. 409-414
6 p.
 artikel
113 Reliability analysis of hybrid spin transfer torque magnetic tunnel junction/CMOS majority voters Slimani, M.
 2016
 64 C p. 48-53
6 p.
 artikel
114 Reliability aspects of copper metallization and interconnect technology for power devices Hille, Frank
 2016
 64 C p. 393-402
10 p.
 artikel
115 Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress Lakhdhar, H.
 2016
 64 C p. 594-598
5 p.
 artikel
116 Reliability design of direct liquid cooled power semiconductor module for hybrid and electric vehicles Dai, Xiaoping
 2016
 64 C p. 474-478
5 p.
 artikel
117 Reliability evaluation of Si-dies due to assembly issues Naumann, F.
 2016
 64 C p. 266-269
4 p.
 artikel
118 Reliability evaluation of tungsten donut-via as an element of the highly robust metallization Hein, Verena
 2016
 64 C p. 259-265
7 p.
 artikel
119 Reliability management — The central enabler for advanced Technologies in Automotive Aal, Andreas
 2016
 64 C p. 13-18
6 p.
 artikel
120 Requirements for the application of ECUs in e-mobility originally qualified for gasoline cars Krüger, M.
 2016
 64 C p. 140-144
5 p.
 artikel
121 Resistive RAM variability monitoring using a ring oscillator based test chip Aziza, H.
 2016
 64 C p. 59-62
4 p.
 artikel
122 Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation Syaranamual, G.J.
 2016
 64 C p. 589-593
5 p.
 artikel
123 Safe cell, safe battery? Battery fire investigation using FMEA, FTA and practical experiments Held, M.
 2016
 64 C p. 705-710
6 p.
 artikel
124 Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale Hommel, S.
 2016
 64 C p. 310-312
3 p.
 artikel
125 Single Event Transient acquisition and mapping for space device Characterization Pilia, Roberta
 2016
 64 C p. 73-78
6 p.
 artikel
126 Static logic state analysis by TLS on powered logic circuits: Three case studies for suspected stuck-at failure modes Helfmeier, C.
 2016
 64 C p. 306-309
4 p.
 artikel
127 Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis Rossetto, Isabella
 2016
 64 C p. 547-551
5 p.
 artikel
128 Study on non-contact current path formation using charged particle beams Ma, J.
 2016
 64 C p. 326-329
4 p.
 artikel
129 Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs Bahat Treidel, E.
 2016
 64 C p. 556-559
4 p.
 artikel
130 Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections Hasegawa, K.
 2016
 64 C p. 98-100
3 p.
 artikel
131 The radiation test based assessment of process quality and reliability for conventional 65-nm CMOS technology Kessarinskiy, L.N.
 2016
 64 C p. 130-133
4 p.
 artikel
132 Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability Cova, P.
 2016
 64 C p. 507-512
6 p.
 artikel
133 Topologies for inverter like operation of power cycling tests Herold, C.
 2016
 64 C p. 453-457
5 p.
 artikel
134 Transient thermal analysis for accelerated reliability testing of LEDs Elger, G.
 2016
 64 C p. 605-609
5 p.
 artikel
135 UIS test of high-voltage GaN-HEMTs with p-type gate structure Saito, W.
 2016
 64 C p. 552-555
4 p.
 artikel
136 200V Fast Recovery Epitaxial Diode with superior ESD capability Irace, A.
 2016
 64 C p. 440-446
7 p.
 artikel
                             136 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland