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                             136 results found
no title author magazine year volume issue page(s) type
1 Accelerated Life Test of high luminosity blue LEDs Nogueira, E.
 2016
 64 C p. 631-634
4 p.
 article
2 Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM Ranjan, A.
 2016
 64 C p. 172-178
7 p.
 article
3 An in depth analysis of pull-up capacitance-voltage characteristic for dielectric charging assessment of MEMS capacitive switches Koutsoureli, M.
 2016
 64 C p. 688-692
5 p.
 article
4 A novel correlative model of failure mechanisms for evaluating MEMS devices reliability Li, Yaqiu
 2016
 64 C p. 669-675
7 p.
 article
5 Application of Fast Laser Deprocessing Techniques on large cross-sectional view area sample with FIB-SEM dual beam system Zhao, Y.Z.
 2016
 64 C p. 362-366
5 p.
 article
6 Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors Oberhoff, S.
 2016
 64 C p. 656-659
4 p.
 article
7 Application of laser deprocessing technique in PFA on chemical over-etched on bond-pad issue Yap, H.H.
 2016
 64 C p. 357-361
5 p.
 article
8 Application of the defect clustering model for forming, SET and RESET statistics in RRAM devices Raghavan, Nagarajan
 2016
 64 C p. 54-58
5 p.
 article
9 A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI Wang, Y.
 2016
 64 C p. 26-30
5 p.
 article
10 A run-time built-in approach of TID test in SRAM based FPGAs Ma, Ning
 2016
 64 C p. 42-47
6 p.
 article
11 Automatic process for time-frequency scan of VLSI Boscaro, A.
 2016
 64 C p. 299-305
7 p.
 article
12 Automatized failure analysis of tungsten coated TSVs via scanning acoustic microscopy Grünwald, E.
 2016
 64 C p. 370-374
5 p.
 article
13 Avalanche robustness of SiC Schottky diode Dchar, Ilyas
 2016
 64 C p. 494-501
8 p.
 article
14 Body diode reliability investigation of SiC power MOSFETs Fayyaz, A.
 2016
 64 C p. 530-534
5 p.
 article
15 Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes Souto, J.
 2016
 64 C p. 627-630
4 p.
 article
16 Channel width dependence of AC stress on bulk nMOSFETs Son, Donghee
 2016
 64 C p. 194-198
5 p.
 article
17 Charging–discharging characteristics of a wound aluminum polymer capacitor Jeong, U.H.
 2016
 64 C p. 447-452
6 p.
 article
18 Chemical rate phenomenon approach applied to lithium battery capacity fade estimation Baghdadi, I.
 2016
 64 C p. 134-139
6 p.
 article
19 Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT Reigosa, P.D.
 2016
 64 C p. 524-529
6 p.
 article
20 Component Reliability Importance assessment on complex systems using Credible Improvement Potential Catelani, Marcantonio
 2016
 64 C p. 113-119
7 p.
 article
21 Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight Shubhakar, K.
 2016
 64 C p. 204-209
6 p.
 article
22 Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs Benvegnù, A.
 2016
 64 C p. 535-540
6 p.
 article
23 Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy Herms, M.
 2016
 64 C p. 330-335
6 p.
 article
24 Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures Broas, M.
 2016
 64 C p. 541-546
6 p.
 article
25 Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors Lee, Sang Myung
 2016
 64 C p. 84-87
4 p.
 article
26 Creeping corrosion of copper on printed circuit board assemblies Vogel, G.
 2016
 64 C p. 650-655
6 p.
 article
27 Cross-sectional nanoprobing fault isolation technique on submicron devices Tan, P.K.
 2016
 64 C p. 321-325
5 p.
 article
28 Current imaging, EBIC/EBAC, and electrical probing combined for fast and reliable in situ electrical fault isolation Kleindiek, Stephan
 2016
 64 C p. 313-316
4 p.
 article
29 Degradation and recovery of variability due to BTI Schlünder, Christian
 2016
 64 C p. 179-184
6 p.
 article
30 Degradation of InGaN-based LEDs related to charge diffusion and build-up La Grassa, M.
 2016
 64 C p. 614-616
3 p.
 article
31 Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes De Santi, C.
 2016
 64 C p. 623-626
4 p.
 article
32 Delamination of polyimide/Cu films under mixed mode loading Walter, T.
 2016
 64 C p. 281-286
6 p.
 article
33 Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy Brand, S.
 2016
 64 C p. 341-345
5 p.
 article
34 Detection of cracks in multilayer ceramic capacitors by X-ray imaging Andersson, C.
 2016
 64 C p. 352-356
5 p.
 article
35 Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules Ortiz Gonzalez, J.
 2016
 64 C p. 434-439
6 p.
 article
36 Device instability of amorphous InGaZnO thin film transistors with transparent source and drain Kim, Sang Min
 2016
 64 C p. 575-579
5 p.
 article
37 Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies Kerber, A.
 2016
 64 C p. 145-151
7 p.
 article
38 Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness Koutsoureli, M.
 2016
 64 C p. 660-664
5 p.
 article
39 DRES: Data recovery for condition monitoring to enhance system reliability Liu, Liansheng
 2016
 64 C p. 125-129
5 p.
 article
40 Early detection and prediction of HKMG SRAM HTOL performance by WLR PBTI tests Chien, Wei-Ting Kary
 2016
 64 C p. 185-188
4 p.
 article
41 Early life field failures in modern automotive electronics – An overview; root causes and precautions Jacob, P.
 2016
 64 C p. 79-83
5 p.
 article
42 Editorial Board 2016
 64 C p. IFC-
1 p.
 article
43 Editorial: ESREF 2016 Petzold, Matthias
 2016
 64 C p. 1-
1 p.
 article
44 Effect of H/Ar treatment on ZnO:B transparent conducting oxide for flexible a-Si:H/μc-Si:H photovoltaic modules under damp heat stress Jeong, Jae-Seong
 2016
 64 C p. 640-645
6 p.
 article
45 Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode Divay, A.
 2016
 64 C p. 585-588
4 p.
 article
46 Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor Auersperg, J.
 2016
 64 C p. 665-668
4 p.
 article
47 Effects of salt spray test on lead-free solder alloy Guédon-Gracia, A.
 2016
 64 C p. 242-247
6 p.
 article
48 Effects of stress-loading test methods on the degradation of light-emitting diode modules Cai, Miao
 2016
 64 C p. 635-639
5 p.
 article
49 Effects of voltage stress on the single event upset (SEU) response of 65nm flip flop Chua, C.T.
 2016
 64 C p. 199-203
5 p.
 article
50 Efficient reliability evaluation methodologies for combinational circuits Cai, Hao
 2016
 64 C p. 19-25
7 p.
 article
51 Electrical analysis on implantation-related defect by nanoprobing methodology Chen, C.Q.
 2016
 64 C p. 317-320
4 p.
 article
52 Electromagnetic susceptibility characterization of double SOI device Li, B.
 2016
 64 C p. 168-171
4 p.
 article
53 Elemental characterisation of sub 20nm structures in devices using new SEM-EDS technology Sagar, J.T.
 2016
 64 C p. 367-369
3 p.
 article
54 End of life and acceleration modelling for power diodes under high temperature reverse bias stress Schilling, O.
 2016
 64 C p. 458-463
6 p.
 article
55 ESD tests on 850nm GaAs-based VCSELs Vanzi, M.
 2016
 64 C p. 617-622
6 p.
 article
56 Evaluation of potential-induced degradation in crystalline Si solar cells using Na fault injection Oh, Wonwook
 2016
 64 C p. 646-649
4 p.
 article
57 Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests Belaïd, M.A.
 2016
 64 C p. 93-97
5 p.
 article
58 Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs Buffolo, M.
 2016
 64 C p. 610-613
4 p.
 article
59 [131] Experimental study of the short-circuit robustness of 600V E-mode GaN transistors Landel, M.
 2016
 64 C p. 560-565
6 p.
 article
60 Failure mechanisms and precautions in plug connectors and relays Jacob, P.
 2016
 64 C p. 693-698
6 p.
 article
61 Failure rate calculation method for high power devices in space applications at low earth orbit Dashdondog, Erdenebaatar
 2016
 64 C p. 502-506
5 p.
 article
62 Fast and trusted intrinsic stress measurement to facilitate improved reliability assessments Vogel, D.
 2016
 64 C p. 276-280
5 p.
 article
63 Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process Martin, A.
 2016
 64 C p. 2-12
11 p.
 article
64 Fatigue life prediction model for accelerated testing of electronic components under non-Gaussian random vibration excitations Jiang, Yu
 2016
 64 C p. 120-124
5 p.
 article
65 Fatigue testing method for fine bond wires in an LQFP package Czerny, B.
 2016
 64 C p. 270-275
6 p.
 article
66 Fault isolation at P/N junction by nanoprober Liu, Wan-Yi
 2016
 64 C p. 387-389
3 p.
 article
67 FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects Calienes Bartra, W.E.
 2016
 64 C p. 152-157
6 p.
 article
68 FESeR: A data-driven framework to enhance sensor reliability for the system condition monitoring Liu, Liansheng
 2016
 64 C p. 681-687
7 p.
 article
69 FPGA LUT delay degradation due to HCI: Experiment and simulation results Naouss, M.
 2016
 64 C p. 31-35
5 p.
 article
70 Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment Huang, J.
 2016
 64 C p. 390-392
3 p.
 article
71 Gate oxide degradation of SiC MOSFET under short-circuit aging tests Mbarek, S.
 2016
 64 C p. 415-418
4 p.
 article
72 77GHz automotive RADAR in eWLB package: From consumer to automotive packaging Haubner, G.
 2016
 64 C p. 699-704
6 p.
 article
73 Impact of non-linear capacitances on transient waveforms during system level ESD stress Escudié, F.
 2016
 64 C p. 88-92
5 p.
 article
74 Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories Canet, P.
 2016
 64 C p. 36-41
6 p.
 article
75 Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors Jang, Hyun Jun
 2016
 64 C p. 570-574
5 p.
 article
76 Improved etching recipe for exposing Cu wire allowing reliable stitch pull Stegink, R.
 2016
 64 C p. 375-378
4 p.
 article
77 Improving the short circuit ruggedness of IGBTs Tinschert, Lukas
 2016
 64 C p. 519-523
5 p.
 article
78 Influence of I/O oxide process on the NBTI performance of 28nm HfO2-based HKMG p-MOSFETs Chien, Wei-Ting Kary
 2016
 64 C p. 220-224
5 p.
 article
79 Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display Shin, Dongseok
 2016
 64 C p. 109-112
4 p.
 article
80 Internal processes in power semiconductors at virtual junction temperature measurement Chen, W.
 2016
 64 C p. 464-468
5 p.
 article
81 Investigating stress measurement capabilities of GHz Scanning Acoustic Microscopy for 3D failure analysis Khaled, A.
 2016
 64 C p. 336-340
5 p.
 article
82 Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability Gupta, N.
 2016
 64 C p. 235-241
7 p.
 article
83 Laser Voltage Probing (LVP) – Its value and the race against scaling Ganesh, Ulrike
 2016
 64 C p. 294-298
5 p.
 article
84 LED degradation: From component to system Hamon, B.
 2016
 64 C p. 599-604
6 p.
 article
85 Lifetime and manufacturability of integrated power electronics Randoll, R.
 2016
 64 C p. 513-518
6 p.
 article
86 Lifetime estimation of SiC MOSFETs under high temperature reverse bias test Uchida, Kosuke
 2016
 64 C p. 425-428
4 p.
 article
87 Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy Chinone, N.
 2016
 64 C p. 566-569
4 p.
 article
88 Magnetic field and current density imaging using off-line lock-in analysis Kögel, M.
 2016
 64 C p. 346-351
6 p.
 article
89 Mechanisms of metallization degradation in high power diodes Brincker, M.
 2016
 64 C p. 489-493
5 p.
 article
90 Microcontroller susceptibility variations to EFT burst during accelerated aging Wu, J.
 2016
 64 C p. 210-214
5 p.
 article
91 Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules Tsukuda, M.
 2016
 64 C p. 479-483
5 p.
 article
92 Mission-profile-based stress analysis of bond-wires in SiC power modules Bahman, A.S.
 2016
 64 C p. 419-424
6 p.
 article
93 Moisture absorption by molding compounds under extreme conditions: Impact on accelerated reliability tests Mavinkurve, A.
 2016
 64 C p. 254-258
5 p.
 article
94 Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory Choi, Jin Hyung
 2016
 64 C p. 215-219
5 p.
 article
95 Natural radiation events in CCD imagers at ground level Saad Saoud, T.
 2016
 64 C p. 68-72
5 p.
 article
96 Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain Lee, Jong Hoon
 2016
 64 C p. 580-584
5 p.
 article
97 Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions Simon-Najasek, M.
 2016
 64 C p. 248-253
6 p.
 article
98 Novel heatsink for power semiconductor module using high thermal conductivity graphite Yamada, Y.
 2016
 64 C p. 484-488
5 p.
 article
99 Numerical investigation of the effects of phosphorus on the mechanical responses of [1 1 0]-oriented silicon nano-wires Liu, B.
 2016
 64 C p. 225-229
5 p.
 article
100 Numerical study of destruction phenomena for punch-through IGBTs under unclamped inductive switching Tamaki, T.
 2016
 64 C p. 469-473
5 p.
 article
101 Online computation of IGBT on-state resistance for off-shelf three-phase two-level power converter systems Mohamed Halick, Mohamed Sathik
 2016
 64 C p. 379-386
8 p.
 article
102 On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology Viale, B.
 2016
 64 C p. 101-108
8 p.
 article
103 On the prediction of radiation-induced SETs in flash-based FPGAs Azimi, S.
 2016
 64 C p. 230-234
5 p.
 article
104 Optimization of contact metallizations for reliable wafer level AuSn bonds Vuorinen, V.
 2016
 64 C p. 676-680
5 p.
 article
105 Performance vs. reliability adaptive body bias scheme in 28nm & 14nm UTBB FDSOI nodes Ndiaye, C.
 2016
 64 C p. 158-162
5 p.
 article
106 Permanent and single event transient faults reliability evaluation EDA tool Aguiar, Y.Q. de
 2016
 64 C p. 63-67
5 p.
 article
107 Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications Beckmeier, D.
 2016
 64 C p. 189-193
5 p.
 article
108 Potentiality of healing techniques in hot-carrier damaged 28nm FDSOI CMOS nodes Bravaix, A.
 2016
 64 C p. 163-167
5 p.
 article
109 Power cycle reliability of Cu nanoparticle joints with mismatched coefficients of thermal expansion Ishizaki, T.
 2016
 64 C p. 287-293
7 p.
 article
110 Power cycling analysis method for high-voltage SiC diodes Banu, V.
 2016
 64 C p. 429-433
5 p.
 article
111 Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations Choi, U.M.
 2016
 64 C p. 403-408
6 p.
 article
112 Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices Arabi, F.
 2016
 64 C p. 409-414
6 p.
 article
113 Reliability analysis of hybrid spin transfer torque magnetic tunnel junction/CMOS majority voters Slimani, M.
 2016
 64 C p. 48-53
6 p.
 article
114 Reliability aspects of copper metallization and interconnect technology for power devices Hille, Frank
 2016
 64 C p. 393-402
10 p.
 article
115 Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress Lakhdhar, H.
 2016
 64 C p. 594-598
5 p.
 article
116 Reliability design of direct liquid cooled power semiconductor module for hybrid and electric vehicles Dai, Xiaoping
 2016
 64 C p. 474-478
5 p.
 article
117 Reliability evaluation of Si-dies due to assembly issues Naumann, F.
 2016
 64 C p. 266-269
4 p.
 article
118 Reliability evaluation of tungsten donut-via as an element of the highly robust metallization Hein, Verena
 2016
 64 C p. 259-265
7 p.
 article
119 Reliability management — The central enabler for advanced Technologies in Automotive Aal, Andreas
 2016
 64 C p. 13-18
6 p.
 article
120 Requirements for the application of ECUs in e-mobility originally qualified for gasoline cars Krüger, M.
 2016
 64 C p. 140-144
5 p.
 article
121 Resistive RAM variability monitoring using a ring oscillator based test chip Aziza, H.
 2016
 64 C p. 59-62
4 p.
 article
122 Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation Syaranamual, G.J.
 2016
 64 C p. 589-593
5 p.
 article
123 Safe cell, safe battery? Battery fire investigation using FMEA, FTA and practical experiments Held, M.
 2016
 64 C p. 705-710
6 p.
 article
124 Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale Hommel, S.
 2016
 64 C p. 310-312
3 p.
 article
125 Single Event Transient acquisition and mapping for space device Characterization Pilia, Roberta
 2016
 64 C p. 73-78
6 p.
 article
126 Static logic state analysis by TLS on powered logic circuits: Three case studies for suspected stuck-at failure modes Helfmeier, C.
 2016
 64 C p. 306-309
4 p.
 article
127 Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis Rossetto, Isabella
 2016
 64 C p. 547-551
5 p.
 article
128 Study on non-contact current path formation using charged particle beams Ma, J.
 2016
 64 C p. 326-329
4 p.
 article
129 Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs Bahat Treidel, E.
 2016
 64 C p. 556-559
4 p.
 article
130 Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections Hasegawa, K.
 2016
 64 C p. 98-100
3 p.
 article
131 The radiation test based assessment of process quality and reliability for conventional 65-nm CMOS technology Kessarinskiy, L.N.
 2016
 64 C p. 130-133
4 p.
 article
132 Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability Cova, P.
 2016
 64 C p. 507-512
6 p.
 article
133 Topologies for inverter like operation of power cycling tests Herold, C.
 2016
 64 C p. 453-457
5 p.
 article
134 Transient thermal analysis for accelerated reliability testing of LEDs Elger, G.
 2016
 64 C p. 605-609
5 p.
 article
135 UIS test of high-voltage GaN-HEMTs with p-type gate structure Saito, W.
 2016
 64 C p. 552-555
4 p.
 article
136 200V Fast Recovery Epitaxial Diode with superior ESD capability Irace, A.
 2016
 64 C p. 440-446
7 p.
 article
                             136 results found
 
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