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                             140 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accurate extraction of the mechanical properties of thin films by nanoindentation for the design of reliable MEMS Sasaki, Yuji
 2010
 50 9-11 p. 1621-1625
5 p.
 artikel
2 A complete methodology for assessing GaN behaviour for military applications Moreau, C.
 2010
 50 9-11 p. 1587-1592
6 p.
 artikel
3 Addressing the challenges in solder resistance measurement for electromigration test Tan, Y.C.
 2010
 50 9-11 p. 1352-1354
3 p.
 artikel
4 Advanced packaging yields higher performance and reliability in power electronics Bayerer, Reinhold
 2010
 50 9-11 p. 1715-1719
5 p.
 artikel
5 A fast moisture sensitivity level qualification method Ma, Xiaosong
 2010
 50 9-11 p. 1654-1660
7 p.
 artikel
6 A fast test technique for life time estimation of ultrasonically welded Cu–Cu interconnects Czerny, B.
 2010
 50 9-11 p. 1641-1644
4 p.
 artikel
7 Ageing effect on electromagnetic susceptibility of a phase locked loop Li, B.
 2010
 50 9-11 p. 1304-1308
5 p.
 artikel
8 Ageing of SiC JFET transistors under repetitive current limitation conditions Bouarroudj-Berkani, M.
 2010
 50 9-11 p. 1532-1537
6 p.
 artikel
9 A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications Latry, O.
 2010
 50 9-11 p. 1574-1576
3 p.
 artikel
10 Ambipolar field-effect transistor based on α,ω-dihexylquaterthiophene and α,ω-diperfluoroquaterthiophene vertical heterojunction Generali, Gianluca
 2010
 50 9-11 p. 1861-1865
5 p.
 artikel
11 A multi-disciplinary study of vibration based reliability of lead-free electronic interconnects Kamara, E.
 2010
 50 9-11 p. 1706-1710
5 p.
 artikel
12 Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations Faqir, M.
 2010
 50 9-11 p. 1520-1522
3 p.
 artikel
13 Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography Riccio, M.
 2010
 50 9-11 p. 1725-1730
6 p.
 artikel
14 Analysis of thermal expansion in elastic and elastoplastic layers subjected to cyclic thermal loading Wada, K.
 2010
 50 9-11 p. 1626-1630
5 p.
 artikel
15 An efficient tool for reliability improvement based on TMR Marques, E. Crespo
 2010
 50 9-11 p. 1247-1250
4 p.
 artikel
16 A new built-in screening methodology for Successive Approximation Register Analog to Digital Converters Malandruccolo, Vezio
 2010
 50 9-11 p. 1750-1757
8 p.
 artikel
17 A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing Rossi, L.
 2010
 50 9-11 p. 1479-1483
5 p.
 artikel
18 Applications of TEM imaging, analysis and electron holography to III-nitride HEMT devices Smith, David J.
 2010
 50 9-11 p. 1514-1519
6 p.
 artikel
19 Assessment of dielectric charging in electrostatically driven MEMS devices: A comparison of available characterization techniques Zaghloul, U.
 2010
 50 9-11 p. 1615-1620
6 p.
 artikel
20 Asynchronous circuits as alternative for mitigation of long-duration transient faults in deep-submicron technologies Bastos, R.P.
 2010
 50 9-11 p. 1241-1246
6 p.
 artikel
21 Automated inspection and classification of flip-chip-contacts using scanning acoustic microscopy Brand, S.
 2010
 50 9-11 p. 1469-1473
5 p.
 artikel
22 Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs Sasso, G.
 2010
 50 9-11 p. 1577-1580
4 p.
 artikel
23 CADless laser assisted methodologies for failure analysis and device reliability Deyine, A.
 2010
 50 9-11 p. 1236-1240
5 p.
 artikel
24 Case study: Failure analysis for metal corrosion induced by pressure pot test Mello, D.
 2010
 50 9-11 p. 1436-1440
5 p.
 artikel
25 Characterising gate dielectrics in high mobility devices using novel nanoscale techniques Kapoor, R.
 2010
 50 9-11 p. 1484-1487
4 p.
 artikel
26 Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue Martineau, D.
 2010
 50 9-11 p. 1768-1772
5 p.
 artikel
27 Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature Tounsi, M.
 2010
 50 9-11 p. 1810-1814
5 p.
 artikel
28 Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy Cavallini, Anna
 2010
 50 9-11 p. 1398-1406
9 p.
 artikel
29 Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs Alvarado, J.
 2010
 50 9-11 p. 1852-1856
5 p.
 artikel
30 Compact MOS-triggered SCR with faster turn-on speed for ESD protection Song, Bo
 2010
 50 9-11 p. 1393-1397
5 p.
 artikel
31 Contribution of calendar ageing modes in the performances degradation of supercapacitors during power cycling Briat, O.
 2010
 50 9-11 p. 1796-1803
8 p.
 artikel
32 Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters Carastro, F.
 2010
 50 9-11 p. 1738-1743
6 p.
 artikel
33 Coupled measurement-simulation procedure for very high power fast recovery – Soft behavior diode design and testing Bertoluzza, F.
 2010
 50 9-11 p. 1720-1724
5 p.
 artikel
34 Creep lifetime prediction of solder joint for heat sink assembly Han, Changwoon
 2010
 50 9-11 p. 1645-1649
5 p.
 artikel
35 Defect-related degradation of Deep-UV-LEDs Meneghini, M.
 2010
 50 9-11 p. 1538-1542
5 p.
 artikel
36 Degradation mechanism analysis in temperature stress tests on III–V ultra-high concentrator solar cells using a 3D distributed model Espinet, P.
 2010
 50 9-11 p. 1875-1879
5 p.
 artikel
37 Degradation of AlInGaP red LEDs under drive current and temperature accelerated life tests Vázquez, M.
 2010
 50 9-11 p. 1559-1562
4 p.
 artikel
38 Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress Michalas, L.
 2010
 50 9-11 p. 1848-1851
4 p.
 artikel
39 Destructive events in NAND Flash memories irradiated with heavy ions Bagatin, M.
 2010
 50 9-11 p. 1832-1836
5 p.
 artikel
40 Determination of the stress level for voltage screen of integrated circuits Kho, R.M.
 2010
 50 9-11 p. 1210-1214
5 p.
 artikel
41 Development of a matrix test board for capacitor reliability testing Virkki, J.
 2010
 50 9-11 p. 1711-1714
4 p.
 artikel
42 Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy Rao, Hemant
 2010
 50 9-11 p. 1528-1531
4 p.
 artikel
43 Dynamic lock-in thermography for operation mode-dependent thermally active fault localization Schlangen, R.
 2010
 50 9-11 p. 1454-1458
5 p.
 artikel
44 Editorial Busatto, Giovanni
 2010
 50 9-11 p. 1191-1192
2 p.
 artikel
45 Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses Baillot, R.
 2010
 50 9-11 p. 1568-1573
6 p.
 artikel
46 Electromigration in WLCSP solder bumps Ubachs, R.L.J.M.
 2010
 50 9-11 p. 1678-1683
6 p.
 artikel
47 Electromigration performance of Through Silicon Via (TSV) – A modeling approach Tan, Y.C.
 2010
 50 9-11 p. 1336-1340
5 p.
 artikel
48 Electron beam induced carbon deposition using hydrocarbon contamination for XTEM analysis Luo, J.S.
 2010
 50 9-11 p. 1446-1450
5 p.
 artikel
49 Electro-thermal simulation of metal interconnections under high current flow Bagnoli, P.E.
 2010
 50 9-11 p. 1672-1677
6 p.
 artikel
50 Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism Iannacci, J.
 2010
 50 9-11 p. 1599-1603
5 p.
 artikel
51 ESD sensitivity of AlGaAs and InGaAsP based Fabry–Perot laser diodes Neitzert, H.C.
 2010
 50 9-11 p. 1563-1567
5 p.
 artikel
52 Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors Belaïd, M.A.
 2010
 50 9-11 p. 1763-1767
5 p.
 artikel
53 Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32nm Bourgeat, J.
 2010
 50 9-11 p. 1379-1382
4 p.
 artikel
54 Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode Dupont, L.
 2010
 50 9-11 p. 1804-1809
6 p.
 artikel
55 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress Di Lecce, Valerio
 2010
 50 9-11 p. 1523-1527
5 p.
 artikel
56 Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature Belmehdi, Yassine
 2010
 50 9-11 p. 1815-1821
7 p.
 artikel
57 Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET Busatto, G.
 2010
 50 9-11 p. 1842-1847
6 p.
 artikel
58 Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III–V stacks using functional summary statistics Miranda, E.
 2010
 50 9-11 p. 1294-1297
4 p.
 artikel
59 Extraction of local thin-film solar cell parameters by bias-dependent IR-LBIC Boostandoost, M.
 2010
 50 9-11 p. 1899-1902
4 p.
 artikel
60 Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45nm and below) Celi, Guillaume
 2010
 50 9-11 p. 1499-1505
7 p.
 artikel
61 Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing Aubert, A.
 2010
 50 9-11 p. 1688-1691
4 p.
 artikel
62 Failure mechanism of COF based Line Driver IC for Flat Panel Display by contamination Jeong, Jae-Seong
 2010
 50 9-11 p. 1488-1493
6 p.
 artikel
63 Fast diffusers in a thermal gradient (solder ball) Lloyd, J.R.
 2010
 50 9-11 p. 1355-1358
4 p.
 artikel
64 Fast reliability analysis of combinatorial logic circuits using conditional probabilities Flaquer, J. Torras
 2010
 50 9-11 p. 1215-1218
4 p.
 artikel
65 Gate delay variability estimation method for parametric yield improvement in nanometer CMOS technology da Silva, Digeorgia
 2010
 50 9-11 p. 1223-1229
7 p.
 artikel
66 High-κ related reliability issues in advanced non-volatile memories Larcher, L.
 2010
 50 9-11 p. 1251-1258
8 p.
 artikel
67 How future automotive functional safety requirements will impact microprocessors design Bellotti, M.
 2010
 50 9-11 p. 1320-1326
7 p.
 artikel
68 Humidity study of a-Si PV cell Tan, Cher Ming
 2010
 50 9-11 p. 1871-1874
4 p.
 artikel
69 IGBT RBSOA non-destructive testing methods: Analysis and discussion Abbate, Carmine
 2010
 50 9-11 p. 1731-1737
7 p.
 artikel
70 Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors Sangameswaran, Sandeep
 2010
 50 9-11 p. 1383-1387
5 p.
 artikel
71 Impact of total dose on heavy-ion upsets in floating gate arrays Gerardin, S.
 2010
 50 9-11 p. 1837-1841
5 p.
 artikel
72 Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD) Ronsisvalle, C.
 2010
 50 9-11 p. 1773-1777
5 p.
 artikel
73 Induced degradation on c-Si solar cells for concentration terrestrial applications Lancellotti, Laura
 2010
 50 9-11 p. 1903-1906
4 p.
 artikel
74 Inside front cover - Editorial board 2010
 50 9-11 p. IFC-
1 p.
 artikel
75 Interface traps density-of-states as a vital component for hot-carrier degradation modeling Tyaginov, S.E.
 2010
 50 9-11 p. 1267-1272
6 p.
 artikel
76 Intermittent-contact capacitance spectroscopy – A new method for determining C(V) curves with sub-micron lateral resolution Biberger, Roland
 2010
 50 9-11 p. 1511-1513
3 p.
 artikel
77 Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS–BICMOS technologies Galy, Ph.
 2010
 50 9-11 p. 1388-1392
5 p.
 artikel
78 Investigation of open bond wires in MEMS devices Keller, C.
 2010
 50 9-11 p. 1697-1699
3 p.
 artikel
79 Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation Bychikhin, S.
 2010
 50 9-11 p. 1427-1430
4 p.
 artikel
80 Investigation on BIST assisted failure analysis on digital integrated circuits Hartmann, C.
 2010
 50 9-11 p. 1464-1468
5 p.
 artikel
81 Investigations on junction temperature estimation based on junction voltage measurements Khatir, Z.
 2010
 50 9-11 p. 1506-1510
5 p.
 artikel
82 Laser modulation mapping on an unmodified laser scanning microscope Zachariasse, Frank
 2010
 50 9-11 p. 1417-1421
5 p.
 artikel
83 Leakage paths identification in NVM using biased data retention Postel-Pellerin, J.
 2010
 50 9-11 p. 1474-1478
5 p.
 artikel
84 Life expectancy and characterization of capacitive RF MEMS switches Matmat, M.
 2010
 50 9-11 p. 1692-1696
5 p.
 artikel
85 Magnetic microscopy for ground plane current detection: a fast and reliable technique for current leakage localization by means of magnetic simulations Infante, F.
 2010
 50 9-11 p. 1700-1705
6 p.
 artikel
86 Mechanical and thermal reliability of printed organic thin-film transistor Boddaert, X.
 2010
 50 9-11 p. 1884-1887
4 p.
 artikel
87 MEMS technology integrated in the CMOS back end Gaddi, R.
 2010
 50 9-11 p. 1593-1598
6 p.
 artikel
88 Methodology to determine the impact of linewidth variation on chip scale copper/low-k backend dielectric breakdown Bashir, Muhammad
 2010
 50 9-11 p. 1341-1346
6 p.
 artikel
89 Methods to improve reliability of bulge test technique to extract mechanical properties of thin films Youssef, H.
 2010
 50 9-11 p. 1888-1893
6 p.
 artikel
90 Microscopic stress simulation of non-planar chip technologies Zarbakhsh, Javad
 2010
 50 9-11 p. 1666-1671
6 p.
 artikel
91 Modeling of dielectric charging in electrostatic MEMS switches Koszewski, A.
 2010
 50 9-11 p. 1609-1614
6 p.
 artikel
92 Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy Ciappa, Mauro
 2010
 50 9-11 p. 1407-1412
6 p.
 artikel
93 Modeling the effect of barrier thickness and low-k dielectric on circuit reliability using 3D model He, Feifei
 2010
 50 9-11 p. 1327-1331
5 p.
 artikel
94 Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques Fakhri, M.
 2010
 50 9-11 p. 1459-1463
5 p.
 artikel
95 NBTI and hot carrier effect of Schottky-barrier p-MOSFETs Kim, Jin-Young
 2010
 50 9-11 p. 1290-1293
4 p.
 artikel
96 NBTI degradation effect on advanced-process 45nm high-k PMOSFETs with geometric and process variations Hatta, S.F. Wan Muhamad
 2010
 50 9-11 p. 1283-1289
7 p.
 artikel
97 New aspects in characterization of adhesion of moulding compounds on different surfaces by using a simple button-shear-test method for lifetime prediction of power devices Goroll, Michael
 2010
 50 9-11 p. 1684-1687
4 p.
 artikel
98 Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices Charavel, R.
 2010
 50 9-11 p. 1758-1762
5 p.
 artikel
99 Novel accelerated testing method for III–V concentrator solar cells Núñez, N.
 2010
 50 9-11 p. 1880-1883
4 p.
 artikel
100 Optimizing focused ion beam created solid immersion lenses in bulk silicon using design of experiments Scholz, P.
 2010
 50 9-11 p. 1441-1445
5 p.
 artikel
101 PMOSFET anti-fuse using GIDL-induced-HEIP mechanism Seo, J.Y.
 2010
 50 9-11 p. 1309-1311
3 p.
 artikel
102 Power cycling results for different control strategies Scheuermann, U.
 2010
 50 9-11 p. 1203-1209
7 p.
 artikel
103 Preliminary results of storage accelerated aging test on InP/InGaAs DHBT Koné, G.A.
 2010
 50 9-11 p. 1548-1553
6 p.
 artikel
104 Preliminary, space focused, reliability tests on European GaN HEMTs Vitobello, F.
 2010
 50 9-11 p. 1581-1586
6 p.
 artikel
105 Processing assessment and adhesion evaluation of copper through-silicon vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures Yang, Y.
 2010
 50 9-11 p. 1636-1640
5 p.
 artikel
106 Radiation effects in nitride read-only memories Libertino, S.
 2010
 50 9-11 p. 1857-1860
4 p.
 artikel
107 Reliability of advanced high-k/metal-gate n-FET devices Stathis, J.H.
 2010
 50 9-11 p. 1199-1202
4 p.
 artikel
108 Reliability of high voltage/high power L/S-band Hbt technology Lambert, B.
 2010
 50 9-11 p. 1543-1547
5 p.
 artikel
109 Reliability of III–V concentrator solar cells Algora, Carlos
 2010
 50 9-11 p. 1193-1198
6 p.
 artikel
110 Reliability of planar, Super-Junction and trench low voltage power MOSFETs Testa, A.
 2010
 50 9-11 p. 1789-1795
7 p.
 artikel
111 Scan chain failure analysis using laser voltage imaging Liao, Joy Y.
 2010
 50 9-11 p. 1422-1426
5 p.
 artikel
112 Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology Cilento, T.
 2010
 50 9-11 p. 1367-1372
6 p.
 artikel
113 Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization Podgaynaya, A.
 2010
 50 9-11 p. 1347-1351
5 p.
 artikel
114 Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level Autran, J.L.
 2010
 50 9-11 p. 1822-1831
10 p.
 artikel
115 SPICE modelling of hot-carrier degradation in Si1– x Ge x S/D and HfSiON based pMOS transistors Martin-Martinez, J.
 2010
 50 9-11 p. 1263-1266
4 p.
 artikel
116 Study of non-contact nano-probing technique using FIB Mashiko, Yoji
 2010
 50 9-11 p. 1451-1453
3 p.
 artikel
117 Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches Tazzoli, A.
 2010
 50 9-11 p. 1604-1608
5 p.
 artikel
118 Supercapacitor ageing at constant temperature and constant voltage and thermal shock Gualous, H.
 2010
 50 9-11 p. 1783-1788
6 p.
 artikel
119 System ESD robustness by co-design of on-chip and on-board protection measures Gossner, H.
 2010
 50 9-11 p. 1359-1366
8 p.
 artikel
120 Testing the effects of reflow on tantalum capacitors Virkki, J.
 2010
 50 9-11 p. 1650-1653
4 p.
 artikel
121 The FMEDA approach to improve the safety assessment according to the IEC61508 Catelani, M.
 2010
 50 9-11 p. 1230-1235
6 p.
 artikel
122 The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation Kim, Dong Wook
 2010
 50 9-11 p. 1316-1319
4 p.
 artikel
123 Thermal ageing induces drastic changes on mechanical and damage behavior of Sn3.0Ag0.5Cu alloy Dompierre, B.
 2010
 50 9-11 p. 1661-1665
5 p.
 artikel
124 Thermal aging model of InP/InGaAs/InP DHBT Ghosh, S.
 2010
 50 9-11 p. 1554-1558
5 p.
 artikel
125 Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED Cester, A.
 2010
 50 9-11 p. 1866-1870
5 p.
 artikel
126 Thermal modeling of planar transformer for switching power converters Bernardoni, M.
 2010
 50 9-11 p. 1778-1782
5 p.
 artikel
127 Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress Stojadinović, N.
 2010
 50 9-11 p. 1278-1282
5 p.
 artikel
128 Threshold voltage instability in high-k based flash memories Rao, Rosario
 2010
 50 9-11 p. 1273-1277
5 p.
 artikel
129 Through Silicon Via (TSV) defect investigations using lateral emission microscopy Cassidy, C.
 2010
 50 9-11 p. 1413-1416
4 p.
 artikel
130 Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65nm technology platform Tazzoli, A.
 2010
 50 9-11 p. 1373-1378
6 p.
 artikel
131 Transistor network restructuring against NBTI degradation Butzen, Paulo F.
 2010
 50 9-11 p. 1298-1303
6 p.
 artikel
132 Triple junction InGaP/InGaAs/Ge solar cells for high concentration photovoltaics application: Degradation tests of solar receivers Padovani, S.
 2010
 50 9-11 p. 1894-1898
5 p.
 artikel
133 UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements Lanza, M.
 2010
 50 9-11 p. 1312-1315
4 p.
 artikel
134 Ultra-fast CAD scan chain highlighting for failure analysis assistance Grützner, M.
 2010
 50 9-11 p. 1494-1498
5 p.
 artikel
135 Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation Gerrer, L.
 2010
 50 9-11 p. 1259-1262
4 p.
 artikel
136 Using error tolerance of target application for efficient reliability improvement of digital circuits dos Santos, G.G.
 2010
 50 9-11 p. 1219-1222
4 p.
 artikel
137 VLSI functional analysis by dynamic emission microscopy Perdu, Philippe
 2010
 50 9-11 p. 1431-1435
5 p.
 artikel
138 Wearout estimation using the Robustness Validation methodology for components in 150°C ambient automotive applications Lecuyer, P.
 2010
 50 9-11 p. 1744-1749
6 p.
 artikel
139 Whisker mitigation measures for Sn-plated Cu for different stress tests Sauter, L.
 2010
 50 9-11 p. 1631-1635
5 p.
 artikel
140 Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects Fu, C.M.
 2010
 50 9-11 p. 1332-1335
4 p.
 artikel
                             140 gevonden resultaten
 
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