| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
|
Chang, T.W.
|
|
2017
|
178 |
C |
p. 199-203
|
artikel
|
| 2 |
Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization
|
Doria, Rodrigo Trevisoli
|
|
2017
|
178 |
C |
p. 17-20
|
artikel
|
| 3 |
A physically based model for resistive memories including a detailed temperature and variability description
|
González-Cordero, G.
|
|
2017
|
178 |
C |
p. 26-29
|
artikel
|
| 4 |
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4kbit RRAM arrays performance
|
Perez, E.
|
|
2017
|
178 |
C |
p. 1-4
|
artikel
|
| 5 |
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
|
Lim, J.H.
|
|
2017
|
178 |
C |
p. 308-312
|
artikel
|
| 6 |
Atomic and electronic structure of oxygen polyvacancies in ZrO2
|
Perevalov, T.V.
|
|
2017
|
178 |
C |
p. 275-278
|
artikel
|
| 7 |
Author Index
|
|
|
2017
|
178 |
C |
p. 318-324
|
artikel
|
| 8 |
Band offsets and metal contacts in monolayer black phosphorus
|
Guo, Yuzheng
|
|
2017
|
178 |
C |
p. 108-111
|
artikel
|
| 9 |
Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
|
Im, Ki-Sik
|
|
2017
|
178 |
C |
p. 217-220
|
artikel
|
| 10 |
Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect
|
Nifa, Iliass
|
|
2017
|
178 |
C |
p. 128-131
|
artikel
|
| 11 |
Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?
|
Stesmans, A.
|
|
2017
|
178 |
C |
p. 112-115
|
artikel
|
| 12 |
Defect creation in amorphous HfO2 facilitated by hole and electron injection
|
Strand, Jack
|
|
2017
|
178 |
C |
p. 279-283
|
artikel
|
| 13 |
Demonstration of 2e12cm−2 eV−1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
|
Gaur, A.
|
|
2017
|
178 |
C |
p. 145-149
|
artikel
|
| 14 |
Determination of trap density in hafnia films produced by two atomic layer deposition techniques
|
Islamov, D.R.
|
|
2017
|
178 |
C |
p. 104-107
|
artikel
|
| 15 |
Editorial Board
|
|
|
2017
|
178 |
C |
p. IFC
|
artikel
|
| 16 |
Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass
|
Konashuk, A.
|
|
2017
|
178 |
C |
p. 209-212
|
artikel
|
| 17 |
Effect of double-stacked active layer on stability of Si-IZO thin-film transistor
|
Lim, Yooseong
|
|
2017
|
178 |
C |
p. 221-224
|
artikel
|
| 18 |
Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
|
Rodriguez-Fernandez, A.
|
|
2017
|
178 |
C |
p. 61-65
|
artikel
|
| 19 |
Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes
|
Ferrandis, Philippe
|
|
2017
|
178 |
C |
p. 158-163
|
artikel
|
| 20 |
Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks
|
Mroczyński, Robert
|
|
2017
|
178 |
C |
p. 116-121
|
artikel
|
| 21 |
Efficient methodology to extract interface traps parameters for TCAD simulations
|
Couso, C.
|
|
2017
|
178 |
C |
p. 66-70
|
artikel
|
| 22 |
Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma
|
Li, Yan-Lin
|
|
2017
|
178 |
C |
p. 5-9
|
artikel
|
| 23 |
Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
|
Bolshakov, Pavel
|
|
2017
|
178 |
C |
p. 190-193
|
artikel
|
| 24 |
Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing
|
Umana-Membreno, G.A.
|
|
2017
|
178 |
C |
p. 164-167
|
artikel
|
| 25 |
Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
|
Chouprik, A.
|
|
2017
|
178 |
C |
p. 250-253
|
artikel
|
| 26 |
Enhanced electrical characteristics of FinFET by rapid-thermal-and-laser annealing with suitable power
|
Ruan, Dun-Bao
|
|
2017
|
178 |
C |
p. 56-60
|
artikel
|
| 27 |
Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3
|
Mart, C.
|
|
2017
|
178 |
C |
p. 254-257
|
artikel
|
| 28 |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
|
Lin, K.Y.
|
|
2017
|
178 |
C |
p. 271-274
|
artikel
|
| 29 |
Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy
|
Ohta, Akio
|
|
2017
|
178 |
C |
p. 85-88
|
artikel
|
| 30 |
Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory
|
Celano, Umberto
|
|
2017
|
178 |
C |
p. 122-124
|
artikel
|
| 31 |
Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
|
Lin, Jun
|
|
2017
|
178 |
C |
p. 204-208
|
artikel
|
| 32 |
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications
|
Sawangsri, K.
|
|
2017
|
178 |
C |
p. 178-181
|
artikel
|
| 33 |
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements
|
Shaw, A.
|
|
2017
|
178 |
C |
p. 213-216
|
artikel
|
| 34 |
Failure of Weibull distribution to represent switching statistics in OxRAM
|
Raghavan, N.
|
|
2017
|
178 |
C |
p. 230-234
|
artikel
|
| 35 |
1/f and RTS noise in InGaAs nanowire MOSFETs
|
Möhle, C.
|
|
2017
|
178 |
C |
p. 52-55
|
artikel
|
| 36 |
High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation
|
Czernohorsky, M.
|
|
2017
|
178 |
C |
p. 262-265
|
artikel
|
| 37 |
Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging
|
Strand, Jack
|
|
2017
|
178 |
C |
p. 235-239
|
artikel
|
| 38 |
Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
|
Acurio, E.
|
|
2017
|
178 |
C |
p. 42-47
|
artikel
|
| 39 |
Impact of gate impedance on dielectric breakdown evaluation for 28nm FDSOI transistors
|
Diab, Amer
|
|
2017
|
178 |
C |
p. 21-25
|
artikel
|
| 40 |
Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices
|
Mallol, M.M.
|
|
2017
|
178 |
C |
p. 168-172
|
artikel
|
| 41 |
Improved leakage current and device uniformity for sub-20nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact
|
Chou, Chuan-Pu
|
|
2017
|
178 |
C |
p. 137-140
|
artikel
|
| 42 |
Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics
|
Lim, Donghwan
|
|
2017
|
178 |
C |
p. 266-270
|
artikel
|
| 43 |
Insulating Films on Semiconductors (INFOS 2017)
|
Dąbrowski, Jarek
|
|
2017
|
178 |
C |
p. A1
|
artikel
|
| 44 |
Interaction of work function tuning and negative bias temperature instability for future nodes
|
Pantisano, Luigi
|
|
2017
|
178 |
C |
p. 258-261
|
artikel
|
| 45 |
Interface state generation of Al2O3/InGaAs MOS structures by electrical stress
|
Yoon, S.-H.
|
|
2017
|
178 |
C |
p. 313-317
|
artikel
|
| 46 |
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
|
Mehonic, A.
|
|
2017
|
178 |
C |
p. 98-103
|
artikel
|
| 47 |
Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide
|
Kita, Koji
|
|
2017
|
178 |
C |
p. 186-189
|
artikel
|
| 48 |
Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface
|
Kolomiiets, N.M.
|
|
2017
|
178 |
C |
p. 304-307
|
artikel
|
| 49 |
Modeling of uniform switching RRAM devices and impact of critical defects
|
Subhechha, S.
|
|
2017
|
178 |
C |
p. 93-97
|
artikel
|
| 50 |
MOSFET degradation dependence on input signal power in a RF power amplifier
|
Crespo-Yepes, A.
|
|
2017
|
178 |
C |
p. 289-292
|
artikel
|
| 51 |
Opportunity of dipole layer formation at non-SiO2 dielectric interfaces in two cases: Multi-cation systems and multi-anion systems
|
Fei, Jiayang
|
|
2017
|
178 |
C |
p. 225-229
|
artikel
|
| 52 |
Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance
|
Mittmann, Terence
|
|
2017
|
178 |
C |
p. 48-51
|
artikel
|
| 53 |
Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1−xSnx, SiyGe1−x−ySnx) with Al2O3
|
Afanas'ev, V.V.
|
|
2017
|
178 |
C |
p. 141-144
|
artikel
|
| 54 |
Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
|
Ohta, Akio
|
|
2017
|
178 |
C |
p. 80-84
|
artikel
|
| 55 |
Quantitative retention model for filamentary oxide-based resistive RAM
|
Degraeve, R.
|
|
2017
|
178 |
C |
p. 38-41
|
artikel
|
| 56 |
Raman study of lysozyme amyloid fibrils suspended on super-hydrophobic surfaces by shear flow
|
Moretti, Manola
|
|
2017
|
178 |
C |
p. 194-198
|
artikel
|
| 57 |
Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers
|
Ke, M.
|
|
2017
|
178 |
C |
p. 132-136
|
artikel
|
| 58 |
Resistive switching in MIM structure based on overstoichiometric tantalum oxide
|
Kuzmichev, D.S.
|
|
2017
|
178 |
C |
p. 150-153
|
artikel
|
| 59 |
Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks
|
Feng, X.
|
|
2017
|
178 |
C |
p. 293-297
|
artikel
|
| 60 |
RRAM serial configuration for the generation of random bits
|
Arumí, D.
|
|
2017
|
178 |
C |
p. 76-79
|
artikel
|
| 61 |
Semipolar AlN on Si(100): Technology and properties
|
Bessolov, V.
|
|
2017
|
178 |
C |
p. 34-37
|
artikel
|
| 62 |
Simulations of transient processes and characteristics of the nc-MOS structures
|
Tanous, D.
|
|
2017
|
178 |
C |
p. 173-177
|
artikel
|
| 63 |
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
|
Cheng, C.K.
|
|
2017
|
178 |
C |
p. 125-127
|
artikel
|
| 64 |
Single-trap analysis of hot-carrier-induced gate oxide degradation in Flash memory cells
|
Tkachev, Yuri
|
|
2017
|
178 |
C |
p. 71-75
|
artikel
|
| 65 |
Spatial analysis of failure sites in large area MIM capacitors using wavelets
|
Muñoz-Gorriz, J.
|
|
2017
|
178 |
C |
p. 10-16
|
artikel
|
| 66 |
Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices
|
Dueñas, S.
|
|
2017
|
178 |
C |
p. 30-33
|
artikel
|
| 67 |
Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
|
Han, Hoon Hee
|
|
2017
|
178 |
C |
p. 240-244
|
artikel
|
| 68 |
Table of Contents
|
|
|
2017
|
178 |
C |
p. v-viii
|
artikel
|
| 69 |
Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers
|
Mazurak, A.
|
|
2017
|
178 |
C |
p. 298-303
|
artikel
|
| 70 |
The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
|
Kim, Young Jin
|
|
2017
|
178 |
C |
p. 284-288
|
artikel
|
| 71 |
Tuning the conductivity of resistive switching devices for electronic synapses
|
Pedro, M.
|
|
2017
|
178 |
C |
p. 89-92
|
artikel
|
| 72 |
Ultra-high thermal stability and extremely low D it on HfO2/p-GaAs(001) interface
|
Wan, H.W.
|
|
2017
|
178 |
C |
p. 154-157
|
artikel
|
| 73 |
Ultra-low power 1T-DRAM in FDSOI technology
|
El Dirani, H.
|
|
2017
|
178 |
C |
p. 245-249
|
artikel
|
| 74 |
Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor
|
Taoka, Noriyuki
|
|
2017
|
178 |
C |
p. 182-185
|
artikel
|
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