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                                       Details for article 5 of 74 found articles
 
 
  Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
 
 
Title: Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
Author: Lim, J.H.
Raghavan, N.
Mei, S.
Lee, K.H.
Noh, S.M.
Kwon, J.H.
Quek, E.
Pey, K.L.
Appeared in: Microelectronic engineering
Paging: Volume 178 (2017) nr. C pages 308-312
Year: 2017
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 74 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands