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                                       Details for article 13 of 74 found articles
 
 
  Demonstration of 2e12cm−2 eV−1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
 
 
Title: Demonstration of 2e12cm−2 eV−1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
Author: Gaur, A.
Balaji, Y.
Lin, D.
Adelmann, C.
Van Houdt, J.
Heyns, M.
Mocuta, D.
Radu, I.
Appeared in: Microelectronic engineering
Paging: Volume 178 (2017) nr. C pages 145-149
Year: 2017
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 74 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands