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                                       Details for article 45 of 74 found articles
 
 
  Interface state generation of Al2O3/InGaAs MOS structures by electrical stress
 
 
Title: Interface state generation of Al2O3/InGaAs MOS structures by electrical stress
Author: Yoon, S.-H.
Chang, C.-Y.
Ahn, D.-H.
Takenaka, M.
Takagi, S.
Appeared in: Microelectronic engineering
Paging: Volume 178 (2017) nr. C pages 313-317
Year: 2017
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 45 of 74 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands