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Journal description
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Details for article 70 of 74 found articles
| Title: |
The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor |
| Author: |
Kim, Young Jin Lim, Donghwan Han, Hoon Hee Sergeevich, Andrey Sokolov Jeon, Yu-Rim Lee, Jae Ho Son, Seok Ki Choi, Changhwan |
| Appeared in: |
Microelectronic engineering |
| Paging: | Volume 178 (2017) nr. C pages 284-288 |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 70 of 74 found articles
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