Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 22 of 74 found articles
 
 
  Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma
 
 
Title: Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma
Author: Li, Yan-Lin
Chang-Liao, Kuei-Shu
Ku, Chao-Chen
Ruan, Dun-Bao
Huang, Chin-Hsiu
Hsu, Yi-Wen
Tsai, Shang-Fu
Yang, Meng-Ying
Wu, Wen-Fa
Appeared in: Microelectronic engineering
Paging: Volume 178 (2017) nr. C pages 5-9
Year: 2017
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 74 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands