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Journal description
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Details for article 46 of 74 found articles
| Title: |
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices |
| Author: |
Mehonic, A. Munde, M.S. Ng, W.H. Buckwell, M. Montesi, L. Bosman, M. Shluger, A.L. Kenyon, A.J. |
| Appeared in: |
Microelectronic engineering |
| Paging: | Volume 178 (2017) nr. C pages 98-103 |
| Year: |
2017 |
| Contents: | |
| Publisher: |
The Authors |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 46 of 74 found articles
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