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                                       Details for article 11 of 74 found articles
 
 
  Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?
 
 
Title: Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?
Author: Stesmans, A.
Afanas'ev, V.V.
Appeared in: Microelectronic engineering
Paging: Volume 178 (2017) nr. C pages 112-115
Year: 2017
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 74 found articles
 
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