| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acoustic noise and vibration analysis of solid state drive induced by multi-layer ceramic capacitors
|
Kim, Hyunwoo
|
|
2018
|
83 |
C |
p. 136-145
|
artikel
|
| 2 |
A 3D numerical study of humidity evolution and condensation risk on a printed circuit board (PCB) exposed to harsh ambient conditions
|
Shojaee Nasirabadi, Parizad
|
|
2018
|
83 |
C |
p. 39-49
|
artikel
|
| 3 |
A dynamic partial reconfigurable system with combined task allocation method to improve the reliability of FPGA
|
Wang, Guohua
|
|
2018
|
83 |
C |
p. 14-24
|
artikel
|
| 4 |
A dynamic partial reconfiguration design flow for permanent faults mitigation in FPGAs
|
Martins, Victor Manuel Gonçalves
|
|
2018
|
83 |
C |
p. 50-63
|
artikel
|
| 5 |
AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers
|
Chiu, Hsien-Chin
|
|
2018
|
83 |
C |
p. 238-241
|
artikel
|
| 6 |
A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's
|
Mohammadi, Hossein
|
|
2018
|
83 |
C |
p. 173-179
|
artikel
|
| 7 |
A similarity based prognostics approach for real time health management of electronics using impedance analysis and SVM regression
|
Lee, Changyong
|
|
2018
|
83 |
C |
p. 77-83
|
artikel
|
| 8 |
Combined simulation and optical measurement technique for investigation of system effects on components solder fatigue
|
Dudek, R.
|
|
2018
|
83 |
C |
p. 162-172
|
artikel
|
| 9 |
Compact conduction band model for transition-metal dichalcogenide alloys
|
Chen, Kuan-Ting
|
|
2018
|
83 |
C |
p. 223-229
|
artikel
|
| 10 |
DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors
|
Hasegawa, K.
|
|
2018
|
83 |
C |
p. 115-118
|
artikel
|
| 11 |
Development of a capacitive sensing technology for the measurement of perpendicularity in the narrow, deep slot-walls of micromolds
|
Chen, Shun-Tong
|
|
2018
|
83 |
C |
p. 216-222
|
artikel
|
| 12 |
Dual-resonance concurrent oscillator
|
Jang, Sheng-Lyang
|
|
2018
|
83 |
C |
p. 208-215
|
artikel
|
| 13 |
Editorial Board
|
|
|
2018
|
83 |
C |
p. ii
|
artikel
|
| 14 |
Editorial: IEDMS 2016
|
Liu, Chuan-Hsi
|
|
2018
|
83 |
C |
p. 207
|
artikel
|
| 15 |
Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays
|
Lee, Chang-Chun
|
|
2018
|
83 |
C |
p. 230-234
|
artikel
|
| 16 |
Effect of fin shape of tapered FinFETs on the device performance in 5-nm node CMOS technology
|
Kurniawan, Erry Dwi
|
|
2018
|
83 |
C |
p. 254-259
|
artikel
|
| 17 |
Effects of SiO2 film thickness and operating temperature on thermally-induced failures in through-silicon-via structures
|
Han, Chang-Fu
|
|
2018
|
83 |
C |
p. 1-13
|
artikel
|
| 18 |
Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors
|
Juan, P.C.
|
|
2018
|
83 |
C |
p. 242-248
|
artikel
|
| 19 |
First principles calculations study of crystallographic orientation effects on SiC/Ti and SiC/Cr interfaces
|
Li, Lei
|
|
2018
|
83 |
C |
p. 119-126
|
artikel
|
| 20 |
Fully-differential transimpedance amplifier for reliable wireless communications
|
Royo, Guillermo
|
|
2018
|
83 |
C |
p. 25-28
|
artikel
|
| 21 |
GaAsSb/InGaAs tunnel field effect transistor with a pocket layer
|
Yu, Tzu-Yu
|
|
2018
|
83 |
C |
p. 235-237
|
artikel
|
| 22 |
High-temperature and humidity change the microstructure and degrade the material properties of tin‑silver interconnect material
|
Gain, Asit Kumar
|
|
2018
|
83 |
C |
p. 101-110
|
artikel
|
| 23 |
Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables
|
Rajaguru, P.
|
|
2018
|
83 |
C |
p. 146-156
|
artikel
|
| 24 |
Investigation and application of vertical NPN devices for RF ESD protection in BiCMOS technology
|
Huang, Guo-Lun
|
|
2018
|
83 |
C |
p. 271-280
|
artikel
|
| 25 |
Low cost sensor network for obstacle avoidance in share-controlled smart wheelchairs under daily scenarios
|
Pu, Jiangbo
|
|
2018
|
83 |
C |
p. 180-186
|
artikel
|
| 26 |
Microstructural evolutions of Sn-3.0Ag-0.5Cu solder joints during thermal cycling
|
Libot, J.B.
|
|
2018
|
83 |
C |
p. 64-76
|
artikel
|
| 27 |
Modular fault tolerant processor architecture on a SoC for space
|
Tabero, Jesús
|
|
2018
|
83 |
C |
p. 84-90
|
artikel
|
| 28 |
[No title]
|
Ersland, Peter
|
|
2018
|
83 |
C |
p. 206
|
artikel
|
| 29 |
Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD
|
Luong, Tien Tung
|
|
2018
|
83 |
C |
p. 286-292
|
artikel
|
| 30 |
Radiation Hardened by Design Latches — A Review and SEU Fault Simulations
|
Sajjade, Faisal Mustafa
|
|
2018
|
83 |
C |
p. 127-135
|
artikel
|
| 31 |
Reaction of NiO film on flexible substrates with buffer solutions and application to flexible arrayed lactate biosensor
|
Chou, Jung-Chuan
|
|
2018
|
83 |
C |
p. 249-253
|
artikel
|
| 32 |
Realistic non-destructive testing of integrated circuit bond wiring using 3-D X-ray tomography, reverse engineering, and finite element analysis
|
Favata, Joseph
|
|
2018
|
83 |
C |
p. 91-100
|
artikel
|
| 33 |
Resistive switching properties of alkaline earth oxide-based memory devices
|
Lee, Ke-Jing
|
|
2018
|
83 |
C |
p. 281-285
|
artikel
|
| 34 |
Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET
|
Yamaguchi, S.
|
|
2018
|
83 |
C |
p. 157-161
|
artikel
|
| 35 |
Simple-structured efficient white organic light emitting diode via solution process
|
Dubey, Deepak Kumar
|
|
2018
|
83 |
C |
p. 293-296
|
artikel
|
| 36 |
Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve
|
Wang, Weiliang
|
|
2018
|
83 |
C |
p. 111-114
|
artikel
|
| 37 |
Study of electrochemical migration based transport kinetics of metal ions in Sn-9Zn alloy
|
Ma, Haoran
|
|
2018
|
83 |
C |
p. 198-205
|
artikel
|
| 38 |
Temperature monitoring inside IGBT modules at forward bias from the cross section and its finite element analysis
|
Huang, Yongle
|
|
2018
|
83 |
C |
p. 187-197
|
artikel
|
| 39 |
Thermal stress probing the channel-length modulation effect of nano n-type FinFETs
|
Tuan, Fu-Yuan
|
|
2018
|
83 |
C |
p. 260-270
|
artikel
|
| 40 |
Warpage simulation and experimental verification for 320 mm × 320 mm panel level fan-out packaging based on die-first process
|
Su, Meiying
|
|
2018
|
83 |
C |
p. 29-38
|
artikel
|
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