| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An optimized package test methodology for testing FRAM® memories
|
Mitra, Sanjay
|
|
1999
|
26 |
1-4 |
p. 297-310
|
article
|
| 2 |
A study on low-temperature crystallization of SrBi2Ta2O9 thin films prepared by sol-gel method using steam curing process
|
Sawada, Yoshihiro
|
|
1999
|
26 |
1-4 |
p. 187-195
|
article
|
| 3 |
Comparison of CSD and sputtered PZT with iridium electrodes
|
Fox, Glen R.
|
|
1999
|
26 |
1-4 |
p. 215-223
|
article
|
| 4 |
Crystallization behavior of alkoxy- derived SrBi2Ta2O9 thin films on Pt-passivated Si
|
Kato, Kazumi
|
|
1999
|
26 |
1-4 |
p. 243-251
|
article
|
| 5 |
Degradation of asymmetrical Pt/SRO/PLZT/Pt capacitors: Role of Pt and oxide electrodes
|
Stolichnov, I.
|
|
1999
|
26 |
1-4 |
p. 311-321
|
article
|
| 6 |
Direct deposition of SrBi2Ta2O9 Film on IrO2 electrode using liquid source CVD method
|
Eshita, Takashi
|
|
1999
|
26 |
1-4 |
p. 103-108
|
article
|
| 7 |
Effect of rf power on the growth and electrical properties of SrBi2Ta2O9 thin films by plasma-enhanced metalorganic chemical vapor deposition
|
Shin, Woong-Chul
|
|
1999
|
26 |
1-4 |
p. 153-161
|
article
|
| 8 |
Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate
|
Jimbo, T.
|
|
1999
|
26 |
1-4 |
p. 109-117
|
article
|
| 9 |
Electrical measurements of the high speed switching characteristics of micron-scale discrete ferroelectric capacitors
|
Devilbiss, Alan D.
|
|
1999
|
26 |
1-4 |
p. 285-295
|
article
|
| 10 |
Epitaxial bismuth-layer-structured perovskite ferroelectric thin films grown by pulsed laser deposition
|
Pignolet, Alain
|
|
1999
|
26 |
1-4 |
p. 21-29
|
article
|
| 11 |
Epitaxial growth and structural properties of conductive RuO2 thin films
|
Lu, P.
|
|
1999
|
26 |
1-4 |
p. 137-151
|
article
|
| 12 |
Explanation of the non-saturating behavior of the hysteresis loop based on the relaxation current
|
Bartic, Andrei T.
|
|
1999
|
26 |
1-4 |
p. 323-330
|
article
|
| 13 |
Fatigue free ferroelectric Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition
|
Li, Tingkai
|
|
1999
|
26 |
1-4 |
p. 75-83
|
article
|
| 14 |
Ferroelectric properties of (PbxLa1-x)(ZryTi1-y)O3 films prepared by two-step pulsed laser deposition process
|
Cheng, Hsiu-Fung
|
|
1999
|
26 |
1-4 |
p. 1-8
|
article
|
| 15 |
Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system
|
Chu, F.
|
|
1999
|
26 |
1-4 |
p. 47-55
|
article
|
| 16 |
Guest editorial
|
Ramesh, R.
|
|
1999
|
26 |
1-4 |
p. 9-12
|
article
|
| 17 |
Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films
|
Kim, Seung-Hyun
|
|
1999
|
26 |
1-4 |
p. 253-268
|
article
|
| 18 |
Influence of the addition of bismuth oxide on the ferroelectric properties of layered strontium bismuth tantalate ceramics
|
Chen, Yi-Chou
|
|
1999
|
26 |
1-4 |
p. 65-73
|
article
|
| 19 |
Interfacial structure and ferroelectric properties of PZT/SrRuO3 heterostructures on miscut (001)SrTiO3
|
Wasa, K.
|
|
1999
|
26 |
1-4 |
p. 39-46
|
article
|
| 20 |
Microstructure evolution and leakage phenomena of CSD PLZT thin films
|
Fujiki, Mitsushi
|
|
1999
|
26 |
1-4 |
p. 269-275
|
article
|
| 21 |
New low temperature preparation of ferroelectric Bi4Ti3O12 thin films by MOCVD method
|
Kijima, Takeshi
|
|
1999
|
26 |
1-4 |
p. 93-101
|
article
|
| 22 |
Novel precursors for the MOCVD of ferroelectric thin films
|
Leedham, Timothy J.
|
|
1999
|
26 |
1-4 |
p. 85-92
|
article
|
| 23 |
Preparation and ferroelectric properties of strontium barium bismuth tantalate ceramics
|
Lu, Chung-Hsin
|
|
1999
|
26 |
1-4 |
p. 57-64
|
article
|
| 24 |
Process engineering issues of CSD-based thin-film multi-level ceramic capacitors
|
Watt, Michael M.
|
|
1999
|
26 |
1-4 |
p. 163-186
|
article
|
| 25 |
Processing of multilayer PZT coatings for device purposes
|
Olding, T.
|
|
1999
|
26 |
1-4 |
p. 225-241
|
article
|
| 26 |
Process stability of ferroelectric PLZT thin film sputtering for FRAM® production
|
Suu, K.
|
|
1999
|
26 |
1-4 |
p. 9-19
|
article
|
| 27 |
Reversible and irreversible domainwall contributions to the polarization in CSD prepared Ba1-xPbx(Ti,Mn)O3 thin films
|
Hoffmann, M.
|
|
1999
|
26 |
1-4 |
p. 331-342
|
article
|
| 28 |
Review of SrBi2Ta2O9 thin films capacitor processing
|
Dehm, Christine
|
|
1999
|
26 |
1-4 |
p. 197-213
|
article
|
| 29 |
SBTN thin film capacitors prepared by RF-magnetron sputtering
|
Sun, Shan
|
|
1999
|
26 |
1-4 |
p. 31-37
|
article
|
| 30 |
Studies on PZT precursor solutions
|
Zhuang, W.
|
|
1999
|
26 |
1-4 |
p. 277-284
|
article
|
| 31 |
Voltage scaling of ferroelectric thin films deposited by CVD
|
Bilodeau, Steven M.
|
|
1999
|
26 |
1-4 |
p. 119-135
|
article
|
Journal description