|
| << vorige | volgende >> |
Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
Details van artikel 11 van 31 gevonden artikelen
| Titel: |
Epitaxial growth and structural properties of conductive RuO2 thin films |
| Auteur: |
Lu, P. He, S. Li, F. X. Jia, Q. X. |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 26 (1999) nr. 1-4 pagina's 137-151 |
| Jaar: |
1999-10-01 |
| Inhoud: |
Metal-organic chemical vapor deposition (MOCVD) has been used to deposit conductive oxide RuO2 thin films at different temperatures on (100) MgO and (100) LaAlO3 substrates. The microstructural properties of the RuO2 films have been studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). Different growth and microstructural properties were observed for the films deposited on the two substrates. For example, the films on MgO are epitaxial at deposition temperatures as low as 350°C, and the films on LaAlO3 are epitaxial only at deposition temperatures of 600°C and above. The epitaxial films on MgO consist of two variants with an orientation relationship given by (110) RuO2//(100) MgO and [001] RuO2//[011]MgO. The epitaxial films on LaAlO3, on the other hand, contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The difference in growth and microstructural properties were explained based on geometrical considerations for the film and substrates. The RuO2/substrate interfaces and the RuO2 domain boundaries were also investigated by TEM and HREM. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 11 van 31 gevonden artikelen
| << vorige | volgende >> |