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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy Bremser, M. D.
 1998
 27 4 p. 229-232
 artikel
2 Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes Kimoto, T.
 1998
 27 4 p. 358-364
 artikel
3 Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates Hanser, A. D.
 1998
 27 4 p. 238-245
 artikel
4 Anomalous oxidation rate in 6H-SiC depending on the partial pressure of O2 and H2O Ueno, Katsunori
 1998
 27 4 p. 313-316
 artikel
5 Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition Sudhir, G. S.
 1998
 27 4 p. 215-221
 artikel
6 Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide Capano, M. A.
 1998
 27 4 p. 370-376
 artikel
7 Dopant-selective photoenhanced wet etching of GaN Youtsey, C.
 1998
 27 4 p. 282-287
 artikel
8 Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface Das, M. K.
 1998
 27 4 p. 353-357
 artikel
9 Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions Henning, J. P.
 1998
 27 4 p. 296-299
 artikel
10 Electronic structure of wurtzite- and zinc blende-GaN studied by angle-resolved photoemission Maruyama, Takahiro
 1998
 27 4 p. 200-205
 artikel
11 Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN Kim, S.
 1998
 27 4 p. 246-254
 artikel
12 Extended defects in wurtzite nitride semiconductors Potin, V.
 1998
 27 4 p. 266-275
 artikel
13 GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers Nikolaev, A. E.
 1998
 27 4 p. 288-291
 artikel
14 Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates Kim, H. S.
 1998
 27 4 p. L21-L25
 artikel
15 Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy Sánchez-García, M. A.
 1998
 27 4 p. 276-281
 artikel
16 High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC Oder, T. N.
 1998
 27 4 p. 324-329
 artikel
17 Improved ohmic contact to n-type 4H and 6H-SiC using nichrome Luckowski, E. D.
 1998
 27 4 p. 330-334
 artikel
18 Improved sidewall morphology on dry-etched SiO2 masked GaN features Ren, F.
 1998
 27 4 p. 175-178
 artikel
19 In-situ reflectance monitoring during MOCVD of AlGaN Ng, T. B.
 1998
 27 4 p. 190-195
 artikel
20 Iron nitride mask and reactive ion etching of GaN films Lee, Heon
 1998
 27 4 p. 185-189
 artikel
21 Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy Nam, Ok-Hyun
 1998
 27 4 p. 233-237
 artikel
22 Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmas Cho, Hyun
 1998
 27 4 p. 166-170
 artikel
23 Materials issues for InGaN-based lasers Nakamura, Shuji
 1998
 27 4 p. 160-165
 artikel
24 Metal contacts to n-type GaN Schmitz, A. C.
 1998
 27 4 p. 255-260
 artikel
25 Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy Rendakova, S. V.
 1998
 27 4 p. 292-295
 artikel
26 MOVPE production reactors for high temperature electronics Protzmann, H.
 1998
 27 4 p. 342-345
 artikel
27 Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy Im, H. J.
 1998
 27 4 p. 345-352
 artikel
28 Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN Tsen, K. T.
 1998
 27 4 p. 171-174
 artikel
29 Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy Yablonskii, G. P.
 1998
 27 4 p. 222-228
 artikel
30 P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition Eiting, C. J.
 1998
 27 4 p. 206-209
 artikel
31 Performance comparison of wide bandgap semiconductor rf power devices Weitzel, C. E.
 1998
 27 4 p. 365-369
 artikel
32 Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis Neudeck, Philip G.
 1998
 27 4 p. 317-323
 artikel
33 Preparation of atomically flat surfaces on silicon carbide using hydrogen etching Ramachandran, V.
 1998
 27 4 p. 308-312
 artikel
34 Si-implantation activation annealing of GaN up to 1400°C Zolper, J. C.
 1998
 27 4 p. 179-184
 artikel
35 Study of avalanche breakdown and impact ionization in 4H silicon carbide Konstantinov, A. O.
 1998
 27 4 p. 335-341
 artikel
36 Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN Luther, B. P.
 1998
 27 4 p. 196-199
 artikel
37 Surface chemistry of porous silicon carbide Shin, W.
 1998
 27 4 p. 304-307
 artikel
38 The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN Ping, A. T.
 1998
 27 4 p. 261-265
 artikel
39 Thickness determination of low doped SiC epi-films on highly doped SiC substrates Macmillan, M. F.
 1998
 27 4 p. 300-303
 artikel
40 Transport coefficients of AlGaN/GaN heterostructures Ahoujja, M.
 1998
 27 4 p. 210-214
 artikel
                             40 gevonden resultaten
 
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