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Journal description
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Details for article 34 of 40 found articles
| Title: |
Si-implantation activation annealing of GaN up to 1400°C |
| Author: |
Zolper, J. C. Han, J. Biefeld, R. M. Deusen, S. B. van Wampler, W. R. Reiger, D. J. Pearton, S. J. Williams, J. S. Tan, H. H. Karlicek, R. F. Stall, R. A. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 27 (1998) nr. 4 pages 179-184 |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Springer-Verlag, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 34 of 40 found articles
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