Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
Titel:
Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
Auteur:
Sánchez-García, M. A. Calleja, E. Sanchez, F. J. Calle, F. Monroy, E. Basak, D. Muñoz, E. Villar, C. Sanz-Hervas, A. Aguilar, M. Serrano, J. J. Blanco, J. M.