| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation kinetics of the As acceptor in HgCdTe
|
Shaw, D.
|
|
2007
|
19 |
1 |
p. 67-73
|
artikel
|
| 2 |
Analysis of dislocation cell patterns in as-grown compound materials (GaAs, CaF2)
|
Juda, Uta
|
|
2008
|
19 |
1 |
p. 342-346
|
artikel
|
| 3 |
Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
|
Irmer, G.
|
|
2008
|
19 |
1 |
p. 51-57
|
artikel
|
| 4 |
Application of computational intelligence to analysis of PITS spectral images for defect centres in semi-insulating materials
|
Jankowski, Stanisław
|
|
2008
|
19 |
1 |
p. 356-361
|
artikel
|
| 5 |
Band offset diagnostics of advanced dielectrics
|
Edelman, Piotr
|
|
2008
|
19 |
1 |
p. 73-78
|
artikel
|
| 6 |
Cathodoluminescence study of GaN-based film structures
|
Jiang, D. S.
|
|
2008
|
19 |
1 |
p. 58-63
|
artikel
|
| 7 |
Cathodoluminescent investigations of InxGa1−xN layers
|
Domracheva, Yana V.
|
|
2008
|
19 |
1 |
p. 319-323
|
artikel
|
| 8 |
Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity
|
Frigeri, C.
|
|
2008
|
19 |
1 |
p. 303-306
|
artikel
|
| 9 |
Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy
|
Tokuda, Yutaka
|
|
2008
|
19 |
1 |
p. 281-284
|
artikel
|
| 10 |
Characterization of poly(vinylidene fluoride-trifluoroethylene) 50/50 copolymer films as a gate dielectric
|
Wi, Soojin
|
|
2007
|
19 |
1 |
p. 45-50
|
artikel
|
| 11 |
Characterization of Sn-doped BST thin films on LaNiO3–coated Si substrate
|
Hu, Wencheng
|
|
2007
|
19 |
1 |
p. 61-66
|
artikel
|
| 12 |
Characterization of strained Si wafers by X-ray diffraction techniques
|
Shimura, Takayoshi
|
|
2008
|
19 |
1 |
p. 189-193
|
artikel
|
| 13 |
Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon
|
Ramspeck, K.
|
|
2008
|
19 |
1 |
p. 4-8
|
artikel
|
| 14 |
Correlation between the free carrier lifetime and total amount of deep centers in ZnO single crystals
|
Gavryushin, Vladimir
|
|
2007
|
19 |
1 |
p. 311-315
|
artikel
|
| 15 |
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage
|
Bou Sanayeh, Marwan
|
|
2007
|
19 |
1 |
p. 155-159
|
artikel
|
| 16 |
Defects in nanostructures with ripened InAs/GaAs quantum dots
|
Nasi, L.
|
|
2008
|
19 |
1 |
p. 96-100
|
artikel
|
| 17 |
Degradation model analysis of laser diodes
|
Häusler, K.
|
|
2008
|
19 |
1 |
p. 160-164
|
artikel
|
| 18 |
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method
|
Frigeri, C.
|
|
2008
|
19 |
1 |
p. 107-110
|
artikel
|
| 19 |
Dielectric and piezoelectric properties of Bi0.5Na0.5TiO3–BaNb2O6 lead-free piezoelectric ceramics
|
Zhou, Changrong
|
|
2007
|
19 |
1 |
p. 29-32
|
artikel
|
| 20 |
Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing
|
Chow, Lee
|
|
2007
|
19 |
1 |
p. 263-268
|
artikel
|
| 21 |
Dislocation-related photoluminescence from processed Si
|
Misiuk, Andrzej
|
|
2007
|
19 |
1 |
p. 243-247
|
artikel
|
| 22 |
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures
|
Wosinski, Tadeusz
|
|
2008
|
19 |
1 |
p. 111-114
|
artikel
|
| 23 |
DRIP-XII Conference 2007
|
Zeimer, Ute
|
|
2008
|
19 |
1 |
p. 1-3
|
artikel
|
| 24 |
Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
|
Sabooni, Mahmood
|
|
2008
|
19 |
1 |
p. 316-318
|
artikel
|
| 25 |
EBIC imaging using scanning transmission electron microscopy: experiment and analysis
|
Tanaka, Shigeyasu
|
|
2008
|
19 |
1 |
p. 324-327
|
artikel
|
| 26 |
Effect of electrical operation on the defect states in organic semiconductors
|
Nguyen, Thien Phap
|
|
2008
|
19 |
1 |
p. 92-95
|
artikel
|
| 27 |
Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon
|
Wang, Weiyan
|
|
2008
|
19 |
1 |
p. 32-35
|
artikel
|
| 28 |
Effect of zinc additions on structure and properties of Sn–Ag eutectic lead-free solder alloy
|
Kamal, Mustafa
|
|
2007
|
19 |
1 |
p. 81-84
|
artikel
|
| 29 |
Electrical properties and interfacial reaction of BGA package with underfill
|
Noh, Bo-In
|
|
2007
|
19 |
1 |
p. 75-80
|
artikel
|
| 30 |
Electrical properties of some Y2O3 and/or Fe2O3-containing lithium silicate glasses and glass-ceramics
|
Gomaa, Mohamed M.
|
|
2007
|
19 |
1 |
p. 5-15
|
artikel
|
| 31 |
Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film
|
Chen, Bin
|
|
2008
|
19 |
1 |
p. 219-223
|
artikel
|
| 32 |
Electronic structures of ZnO(0001)-Zn and (000−1)-O polar surfaces
|
Zhou, Changjie
|
|
2008
|
19 |
1 |
p. 229-233
|
artikel
|
| 33 |
Encapsulation of silver particles using co-axial jetting
|
Samarasinghe, S. R.
|
|
2007
|
19 |
1 |
p. 33-38
|
artikel
|
| 34 |
Evaluation of photoelectrical properties of Bi doped CdTe crystals
|
Kadys, A.
|
|
2008
|
19 |
1 |
p. 234-238
|
artikel
|
| 35 |
Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopy
|
Ogura, Atsushi
|
|
2008
|
19 |
1 |
p. 122-126
|
artikel
|
| 36 |
Explanation of positive and negative PICTS peaks in SI-GaAs
|
Schmerler, S.
|
|
2008
|
19 |
1 |
p. 328-332
|
artikel
|
| 37 |
Field emission properties of carbon nanotube pastes examined using design of experiments
|
Darsono, Nono
|
|
2007
|
19 |
1 |
p. 17-23
|
artikel
|
| 38 |
Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation
|
Zinchuk, O.
|
|
2008
|
19 |
1 |
p. 273-276
|
artikel
|
| 39 |
Gettering of iron in silicon by boron implantation
|
Haarahiltunen, A.
|
|
2008
|
19 |
1 |
p. 41-45
|
artikel
|
| 40 |
High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC
|
Kamiński, Paweł
|
|
2008
|
19 |
1 |
p. 224-228
|
artikel
|
| 41 |
Hydrothermal preparation and properties of nanocrystalline ZnS:Mn
|
Ren, Zhouyun
|
|
2007
|
19 |
1 |
p. 1-4
|
artikel
|
| 42 |
Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies
|
Bull, Stephen
|
|
2008
|
19 |
1 |
p. 145-149
|
artikel
|
| 43 |
Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN
|
Dierre, B.
|
|
2008
|
19 |
1 |
p. 307-310
|
artikel
|
| 44 |
Influence of defects in opal photonic crystals on the optical transmission imaged by near-field scanning optical microscopy
|
Bittkau, K.
|
|
2008
|
19 |
1 |
p. 203-207
|
artikel
|
| 45 |
Influence of doping on the reliability of AlGaInP LEDs
|
Altieri-Weimar, Paola
|
|
2008
|
19 |
1 |
p. 338-341
|
artikel
|
| 46 |
Influence of plasma treatments on the microstructure and electrophysical properties of SnOx thin films synthesized by magnetron sputtering and sol–gel technique
|
Mukhamedshina, D. M.
|
|
2008
|
19 |
1 |
p. 382-387
|
artikel
|
| 47 |
Influences of particle size upon room temperature structure of BaTiO3 thin films on p-Si substrates
|
Min, Ki-Deuk
|
|
2007
|
19 |
1 |
p. 85-90
|
artikel
|
| 48 |
Infrared light emission from porous silicon
|
Jia, Guobin
|
|
2008
|
19 |
1 |
p. 9-13
|
artikel
|
| 49 |
Initial process effects on the surface morphology and structural property of the AlN epilayers
|
Chen, Xiaohong
|
|
2008
|
19 |
1 |
p. 215-218
|
artikel
|
| 50 |
In situ X-ray diffraction study of epitaxial growth of ordered Fe3Si films
|
Jenichen, B.
|
|
2007
|
19 |
1 |
p. 199-202
|
artikel
|
| 51 |
Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
|
Hahn, T.
|
|
2008
|
19 |
1 |
p. 79-82
|
artikel
|
| 52 |
Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study
|
Avella, Manuel
|
|
2008
|
19 |
1 |
p. 171-175
|
artikel
|
| 53 |
Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay technique
|
Saad, A.
|
|
2008
|
19 |
1 |
p. 371-374
|
artikel
|
| 54 |
Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes
|
Renaud, Cédric
|
|
2008
|
19 |
1 |
p. 87-91
|
artikel
|
| 55 |
Irradiation effects on AlGaN HFET devices and GaN layers
|
Gnanapragasam, Sonia
|
|
2008
|
19 |
1 |
p. 64-67
|
artikel
|
| 56 |
Laser-induced defect creation in 300 mm SOI-wafer analyzed by use of photoelastic imaging
|
Schulz, Kristian
|
|
2008
|
19 |
1 |
p. 135-139
|
artikel
|
| 57 |
Lithium-drifted, silicon radiation detectors for harsh radiation environments
|
Grant, J.
|
|
2008
|
19 |
1 |
p. 14-18
|
artikel
|
| 58 |
Local cathodoluminescent study of the multilayers semiconductors nanostructures
|
Zamoryanskaya, Maria V.
|
|
2008
|
19 |
1 |
p. 362-365
|
artikel
|
| 59 |
Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers
|
Inoue, M.
|
|
2008
|
19 |
1 |
p. 132-134
|
artikel
|
| 60 |
Microstructure of a-plane ($$2\bar{1}\bar{1}0$$) GaN ELOG stripe patterns with different in-plane orientation
|
Wernicke, Tim
|
|
2008
|
19 |
1 |
p. 46-50
|
artikel
|
| 61 |
New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devices
|
Adachi, Masahiro
|
|
2008
|
19 |
1 |
p. 299-302
|
artikel
|
| 62 |
Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states
|
Abdi, M. A.
|
|
2007
|
19 |
1 |
p. 248-253
|
artikel
|
| 63 |
Omega-Scan: an X-ray tool for the characterization of crystal properties
|
Berger, Hans
|
|
2007
|
19 |
1 |
p. 351-355
|
artikel
|
| 64 |
On the characterisation of grown-in defects in Czochralski-grown Si and Ge
|
Vanhellemont, J.
|
|
2008
|
19 |
1 |
p. 24-31
|
artikel
|
| 65 |
Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition
|
Claudio, Gianfranco
|
|
2007
|
19 |
1 |
p. 285-288
|
artikel
|
| 66 |
Photoelastic strain measurement in GaP (100) wafers under external stresses
|
Fukuzawa, M.
|
|
2008
|
19 |
1 |
p. 83-86
|
artikel
|
| 67 |
Point defects in SiGe alloys: structural guessing based on electronic transition analysis
|
Mesli, A.
|
|
2007
|
19 |
1 |
p. 115-121
|
artikel
|
| 68 |
Point defect structure in CdTe and ZnTe thin films
|
Kosyak, V. V.
|
|
2008
|
19 |
1 |
p. 375-381
|
artikel
|
| 69 |
Preparation and characterization of Co–Fe–B thin films produced by electroless deposition
|
Dadvand, N.
|
|
2007
|
19 |
1 |
p. 51-59
|
artikel
|
| 70 |
Radially non-uniform interaction of nitrogen with silicon wafers
|
Akhmetov, V.
|
|
2008
|
19 |
1 |
p. 36-40
|
artikel
|
| 71 |
Raman scattering characterization of Ge-composition in bulk Si1−xGex with compositional variation
|
Islam, M. R.
|
|
2007
|
19 |
1 |
p. 294-298
|
artikel
|
| 72 |
Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy
|
Montgomery, Paul
|
|
2007
|
19 |
1 |
p. 194-198
|
artikel
|
| 73 |
SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing
|
Yakimov, E. B.
|
|
2008
|
19 |
1 |
p. 277-280
|
artikel
|
| 74 |
SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
|
Kirste, Lutz
|
|
2007
|
19 |
1 |
p. 176-181
|
artikel
|
| 75 |
Spatial variations of carrier and defect concentration in VGF GaAs:Si
|
Baeumler, Martina
|
|
2007
|
19 |
1 |
p. 165-170
|
artikel
|
| 76 |
Stability of impurity–vacancy pairs in germanium carbide
|
Chroneos, Alexander
|
|
2007
|
19 |
1 |
p. 25-28
|
artikel
|
| 77 |
Statistical methods of determining the QD dimensions based on atomic force microscopy measurements
|
Piotrowski, T.
|
|
2008
|
19 |
1 |
p. 347-350
|
artikel
|
| 78 |
Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
|
Frigeri, C.
|
|
2007
|
19 |
1 |
p. 289-293
|
artikel
|
| 79 |
Structure properties of carbon implanted silicon layers
|
Nussupov, K. Kh.
|
|
2008
|
19 |
1 |
p. 254-262
|
artikel
|
| 80 |
Study of in-depth strain variation in ion-irradiated GaN
|
Herms, Martin
|
|
2007
|
19 |
1 |
p. 68-72
|
artikel
|
| 81 |
Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methods
|
Frantskevich, A. V.
|
|
2008
|
19 |
1 |
p. 239-242
|
artikel
|
| 82 |
Study of Schottky diodes made on Mn doped p-type InP
|
Zdansky, Karel
|
|
2007
|
19 |
1 |
p. 333-337
|
artikel
|
| 83 |
Study of the degradation of AlGaAs-based high-power laser bars: V defects
|
Martín-Martín, A.
|
|
2007
|
19 |
1 |
p. 140-144
|
artikel
|
| 84 |
The effect of glass addition on the dielectric properties of barium strontium titanate
|
Priya Rani, B. R.
|
|
2007
|
19 |
1 |
p. 39-44
|
artikel
|
| 85 |
The effects of oxygen vacancies on the electronic properties of V2O5−x
|
Li, Zhi-Yang
|
|
2007
|
19 |
1 |
p. 366-370
|
artikel
|
| 86 |
The evolution of the ion implantation damage in device processing
|
Polignano, M. L.
|
|
2008
|
19 |
1 |
p. 182-188
|
artikel
|
| 87 |
The origin and reduction of dislocations in Gallium Nitride
|
Oliver, R. A.
|
|
2008
|
19 |
1 |
p. 208-214
|
artikel
|
| 88 |
Thermal instability of electron traps in InAs/GaAs quantum dot structures
|
Kaniewska, M.
|
|
2008
|
19 |
1 |
p. 101-106
|
artikel
|
| 89 |
Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance
|
Pierścińska, Dorota
|
|
2008
|
19 |
1 |
p. 150-154
|
artikel
|
| 90 |
Ultra high-speed characterization of multicrystalline Si wafers by photoluminescence imaging with HF immersion
|
Sugimoto, H.
|
|
2008
|
19 |
1 |
p. 127-131
|
artikel
|
| 91 |
Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements
|
Yamada-Kaneta, Hiroshi
|
|
2008
|
19 |
1 |
p. 19-23
|
artikel
|
| 92 |
White beam topography of 300 mm Si wafers
|
Danilewsky, A. N.
|
|
2007
|
19 |
1 |
p. 269-272
|
artikel
|
| 93 |
Zero and negative temperature coefficients of resistivity of rapidly solidified Bi–Sn alloys using melt-spinning technique
|
Kamal, Mustafa
|
|
2007
|
19 |
1 |
p. 91-96
|
artikel
|
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