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                             59 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A fast and efficient technique to apply Selective TMR through optimization Ruano, Oscar
 2011
 51 12 p. 2388-2401
14 p.
 artikel
2 A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology Chiu, Hsien-Chin
 2011
 51 12 p. 2137-2142
6 p.
 artikel
3 A 0.18μm CMOS ring VCO for clock and data recovery applications Sánchez-Azqueta, C.
 2011
 51 12 p. 2351-2356
6 p.
 artikel
4 A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors Ghadiry, M.H.
 2011
 51 12 p. 2143-2146
4 p.
 artikel
5 Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensions Li, Cong
 2011
 51 12 p. 2053-2058
6 p.
 artikel
6 An explicit multi-exponential model for semiconductor junctions with series and shunt resistances Lugo-Muñoz, Denise
 2011
 51 12 p. 2044-2048
5 p.
 artikel
7 A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement Saremi, Mehdi
 2011
 51 12 p. 2069-2076
8 p.
 artikel
8 A self-consistent extraction procedure for source/drain resistance in MOSFETs Chang, Yang-Hua
 2011
 51 12 p. 2049-2052
4 p.
 artikel
9 Controlling of electrical and interface state density properties of ZnO:Co/p-silicon diode structures by compositional fraction of cobalt dopant Yakuphanoglu, F.
 2011
 51 12 p. 2195-2199
5 p.
 artikel
10 Corrosion behavior, whisker growth, and electrochemical migration of Sn–3.0Ag–0.5Cu solder doping with In and Zn in NaCl solution Hua, L.
 2011
 51 12 p. 2274-2283
10 p.
 artikel
11 Crack propagation in multilayer thin-film structures of electronic packages using the peridynamic theory Agwai, A.
 2011
 51 12 p. 2298-2305
8 p.
 artikel
12 DSP based overcurrent relay using fuzzy bang–bang controller Goh, Yin Lee
 2011
 51 12 p. 2366-2373
8 p.
 artikel
13 Editorial board 2011
 51 12 p. IFC-
1 p.
 artikel
14 Effect of additions of ZrO2 nano-particles on the microstructure and shear strength of Sn–Ag–Cu solder on Au/Ni metallized Cu pads Gain, Asit Kumar
 2011
 51 12 p. 2306-2313
8 p.
 artikel
15 Effects of alloying elements on microstructure and thermal aging properties of Au bonding wire Kim, Hyung-Giun
 2011
 51 12 p. 2250-2256
7 p.
 artikel
16 Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface Pang, X.Y.
 2011
 51 12 p. 2330-2335
6 p.
 artikel
17 Erratum to “On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies” [MR 51/9–11 (2011) 1810–1818] Zaghloul, Usama
 2011
 51 12 p. 2416-
1 p.
 artikel
18 Evaluating nanotribological behavior of annealing Si0.8Ge0.2/Si films Wu, Ming-Jhang
 2011
 51 12 p. 2223-2227
5 p.
 artikel
19 Fast and accurate statistical characterization of standard cell libraries Brusamarello, Lucas
 2011
 51 12 p. 2341-2350
10 p.
 artikel
20 Finite element based fatigue life estimation of the solder joints with effect of intermetallic compound growth Chiou, Yung-Chuan
 2011
 51 12 p. 2319-2329
11 p.
 artikel
21 Functional fault models for non-scan sequential circuits Bareisa, Eduardas
 2011
 51 12 p. 2402-2411
10 p.
 artikel
22 High fluence 1.8MeV proton irradiation effects on n-type MOS capacitors Arinero, R.
 2011
 51 12 p. 2093-2096
4 p.
 artikel
23 Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13μm partially depleted silicon-on-insulator n-MOSFETs Zhou, Jianhua
 2011
 51 12 p. 2077-2080
4 p.
 artikel
24 Improving an LDMOST by variation of lateral doping on epitaxial-layer drift region Chang, Yang-Hua
 2011
 51 12 p. 2059-2063
5 p.
 artikel
25 Influence of crystallographic orientation of Sn–Ag–Cu on electromigration in flip-chip joint Lee, Kiju
 2011
 51 12 p. 2290-2297
8 p.
 artikel
26 Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope Hourani, W.
 2011
 51 12 p. 2097-2101
5 p.
 artikel
27 Investigation of the characteristics of overhang bonding for 3-D stacked dies in microelectronics packaging Li, Junhui
 2011
 51 12 p. 2236-2242
7 p.
 artikel
28 Investigation of the electrical transport mechanism in VO x thin films Axelevitch, A.
 2011
 51 12 p. 2119-2123
5 p.
 artikel
29 Laterally inhomogeneous barrier analysis of identically prepared Cd/CdS/n-Si/Au–Sb structures by SILAR method Güzeldir, B.
 2011
 51 12 p. 2179-2184
6 p.
 artikel
30 Leakage current and defect characterization of p+n-source/drain diodes Roll, Guntrade
 2011
 51 12 p. 2081-2085
5 p.
 artikel
31 Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity Spassov, D.
 2011
 51 12 p. 2102-2109
8 p.
 artikel
32 Microstructure, electric flame-off characteristics and tensile properties of silver bonding wires Hsueh, Hao-Wen
 2011
 51 12 p. 2243-2249
7 p.
 artikel
33 Novel radiation hardened latch design considering process, voltage and temperature variations for nanoscale CMOS technology Nan, Haiqing
 2011
 51 12 p. 2086-2092
7 p.
 artikel
34 Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation Tam, Wing-Shan
 2011
 51 12 p. 2064-2068
5 p.
 artikel
35 On-chip system level protection of FM antenna pin with improved linearity Notermans, Guido
 2011
 51 12 p. 2129-2136
8 p.
 artikel
36 On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods Demirezen, S.
 2011
 51 12 p. 2153-2162
10 p.
 artikel
37 Operand Width Aware Hardware Reuse: A low cost fault-tolerant approach to ALU design in embedded processors Fazeli, Mahdi
 2011
 51 12 p. 2374-2387
14 p.
 artikel
38 Organic inverter: Theoretical analysis using load matching technique Omar, S.
 2011
 51 12 p. 2173-2178
6 p.
 artikel
39 Photosensitivity n-channel ZnO phototransistor for optoelectronic applications: Modeling of ZnO TFT Yakuphanoglu, F.
 2011
 51 12 p. 2200-2204
5 p.
 artikel
40 Poisson shock models leading to new classes of non-monotonic aging life distributions Pandey, Aniruddha
 2011
 51 12 p. 2412-2415
4 p.
 artikel
41 Process variation aware dual-Vth assignment technique for low power nanoscale CMOS design Mande, Sudhakar S.
 2011
 51 12 p. 2357-2365
9 p.
 artikel
42 Quantitative reliability analysis of flip–chip packages under thermal–cyclic loading and in consideration of parameter uncertainties Hsu, Yao
 2011
 51 12 p. 2284-2289
6 p.
 artikel
43 Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking Hong, Sung Chul
 2011
 51 12 p. 2228-2235
8 p.
 artikel
44 Self-protection capability of integrated NLDMOS power arrays in ESD pulse regimes Aliaj, Blerina
 2011
 51 12 p. 2015-2030
16 p.
 artikel
45 Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors Lv, Ling
 2011
 51 12 p. 2168-2172
5 p.
 artikel
46 Study on a cooling system based on thermoelectric cooler for thermal management of high-power LEDs Li, Junhui
 2011
 51 12 p. 2210-2215
6 p.
 artikel
47 Substrate-engineered GGNMOS for low trigger voltage ESD in 65nm CMOS process Ma, Fei
 2011
 51 12 p. 2124-2128
5 p.
 artikel
48 Synthesis creep behavior of Sn63Pb37 under the applied stress and electric current Xuan, Fu-Zhen
 2011
 51 12 p. 2336-2340
5 p.
 artikel
49 Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures Karataş, Şükrü
 2011
 51 12 p. 2205-2209
5 p.
 artikel
50 The effect of surface modification and catalytic metal contact on methane sensing performance of nano-ZnO–Si heterojunction sensor Bhattacharyya, P.
 2011
 51 12 p. 2185-2194
10 p.
 artikel
51 The effects of 12MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device Aydoğan, Şakir
 2011
 51 12 p. 2216-2222
7 p.
 artikel
52 The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD Yang, X.M.
 2011
 51 12 p. 2115-2118
4 p.
 artikel
53 Thermal interface materials for automotive electronic control unit: Trends, technology and R&D challenges Otiaba, K.C.
 2011
 51 12 p. 2031-2043
13 p.
 artikel
54 Thermal reliability of VCO using InGaP/GaAs HBTs Liu, Xiang
 2011
 51 12 p. 2147-2152
6 p.
 artikel
55 Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs Chiu, Hsien-Chin
 2011
 51 12 p. 2163-2167
5 p.
 artikel
56 Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs Lu, Chun-Chang
 2011
 51 12 p. 2110-2114
5 p.
 artikel
57 Void formation at the interface in Sn/Cu solder joints Yang, Yang
 2011
 51 12 p. 2314-2318
5 p.
 artikel
58 Wafer-level packaging of silicon to glass with a BCB intermediate layer using localised laser heating Lorenz, N.
 2011
 51 12 p. 2257-2262
6 p.
 artikel
59 Warpage evolution of overmolded ball grid array package during post-mold curing thermal process Chiu, Tz-Cheng
 2011
 51 12 p. 2263-2273
11 p.
 artikel
                             59 gevonden resultaten
 
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