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                                       Details for article 22 of 59 found articles
 
 
  High fluence 1.8MeV proton irradiation effects on n-type MOS capacitors
 
 
Title: High fluence 1.8MeV proton irradiation effects on n-type MOS capacitors
Author: Arinero, R.
Zhang, E.X.
Rezzak, N.
Schrimpf, R.D.
Fleetwood, D.M.
Choï, B.K.
Hmelo, A.B.
Mekki, J.
Touboul, A.D.
Saigné, F.
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 12 pages 4 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 59 found articles
 
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