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Journal description
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Details for article 22 of 59 found articles
| Title: |
High fluence 1.8MeV proton irradiation effects on n-type MOS capacitors |
| Author: |
Arinero, R. Zhang, E.X. Rezzak, N. Schrimpf, R.D. Fleetwood, D.M. Choï, B.K. Hmelo, A.B. Mekki, J. Touboul, A.D. Saigné, F. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 51 (2011) nr. 12 pages 4 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 22 of 59 found articles
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