| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative EPR study of ion implantation induced damage in Si, Si1−x Ge x (x ≠ 0) and SiC
|
Barklie, R.C.
|
|
1996
|
120 |
1-4 |
p. 139-146
8 p.
|
artikel
|
| 2 |
A study of the blue photoluminescence emission from thermally-grown, Si+-implanted SiO2 films after short-time annealing
|
Skorupa, W.
|
|
1996
|
120 |
1-4 |
p. 106-109
4 p.
|
artikel
|
| 3 |
Author index
|
|
|
1996
|
120 |
1-4 |
p. 315-321
7 p.
|
artikel
|
| 4 |
Carbon clustering in Si1−x C x formed by ion implantation
|
Calcagno, L.
|
|
1996
|
120 |
1-4 |
p. 121-124
4 p.
|
artikel
|
| 5 |
Carbon nitride thin films prepared by a capacitively coupled RF plasma jet
|
Dinescu, G.
|
|
1996
|
120 |
1-4 |
p. 298-302
5 p.
|
artikel
|
| 6 |
Channeled ion beam synthesis: a new technique for forming high-quality rare-earth silicides
|
Vantomme, A.
|
|
1996
|
120 |
1-4 |
p. 190-197
8 p.
|
artikel
|
| 7 |
Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si
|
Cristiano, F.
|
|
1996
|
120 |
1-4 |
p. 156-160
5 p.
|
artikel
|
| 8 |
Characterization of Si Ge x Si 1 − x heterojunction bipolar transistors formed by Ge ion implantation in Si
|
Lombardo, S.
|
|
1996
|
120 |
1-4 |
p. 169-172
4 p.
|
artikel
|
| 9 |
Conversion of organic-inorganic polymers to ceramics by ion implantation
|
Pivin, Jean Claude
|
|
1996
|
120 |
1-4 |
p. 262-265
4 p.
|
artikel
|
| 10 |
Damage and defects from low-energy implants in Si
|
Eaglesham, D.J.
|
|
1996
|
120 |
1-4 |
p. 1-4
4 p.
|
artikel
|
| 11 |
Damage production in GaAs during MeV ion implantation
|
Herre, O.
|
|
1996
|
120 |
1-4 |
p. 230-235
6 p.
|
artikel
|
| 12 |
Damage profiles in as-implanted 〈100〉 Si crystals: strain by X-ray diffractometry versus interstitials by RBS-channeling
|
Nipoti, R.
|
|
1996
|
120 |
1-4 |
p. 64-67
4 p.
|
artikel
|
| 13 |
Defect evolution in MeV ion-implanted silicon
|
Lalita, J.
|
|
1996
|
120 |
1-4 |
p. 27-32
6 p.
|
artikel
|
| 14 |
Defect production mechanisms in metals and covalent semiconductors
|
Diaz de la Rubia, T.
|
|
1996
|
120 |
1-4 |
p. 19-26
8 p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
1996
|
120 |
1-4 |
p. ii-iii
nvt p.
|
artikel
|
| 16 |
Effect of forming gas anneals on the photoluminescence from nanocrystalline silicon formed by Si+ implantation into SiO2 matrix
|
Komoda, T.
|
|
1996
|
120 |
1-4 |
p. 93-96
4 p.
|
artikel
|
| 17 |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+
|
Frangis, N.
|
|
1996
|
120 |
1-4 |
p. 186-189
4 p.
|
artikel
|
| 18 |
Evaluation and control of defects, formed by keV-MeV implantation
|
Saito, S.
|
|
1996
|
120 |
1-4 |
p. 37-42
6 p.
|
artikel
|
| 19 |
Evolution of nanocluster ensembles: Computer simulation of diffusion and reaction controlled Ostwald ripening
|
Strobel, M.
|
|
1996
|
120 |
1-4 |
p. 216-220
5 p.
|
artikel
|
| 20 |
EXAFS studies of thermal annealing effects on the local environment of erbium implanted in LiNbO3
|
Mignotte, C.
|
|
1996
|
120 |
1-4 |
p. 81-83
3 p.
|
artikel
|
| 21 |
EXAFS study on Ag-doped silicate glasses irradiated with low-mass ions
|
d'Acapito, F.
|
|
1996
|
120 |
1-4 |
p. 110-113
4 p.
|
artikel
|
| 22 |
High temperature carbon implantation in SIMOX
|
Nejim, A.
|
|
1996
|
120 |
1-4 |
p. 129-132
4 p.
|
artikel
|
| 23 |
High temperature high dose C ion implantation in epitaxial SiGe
|
Pérez-Rodríguez, A.
|
|
1996
|
120 |
1-4 |
p. 173-176
4 p.
|
artikel
|
| 24 |
Influence of additional UV-light illumination on preparation of TiN by ion beam assisted deposition
|
Wengenmair, H.
|
|
1996
|
120 |
1-4 |
p. 286-289
4 p.
|
artikel
|
| 25 |
Investigation of BF2 + implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing
|
Kaabi, L.
|
|
1996
|
120 |
1-4 |
p. 68-73
6 p.
|
artikel
|
| 26 |
Investigation of plasma immersion ion implanted niobium oxide and titanium nitride films by nanohardness measurement
|
Königer, A.
|
|
1996
|
120 |
1-4 |
p. 282-285
4 p.
|
artikel
|
| 27 |
Investigation of the ion acoustic effect during focused ion beam irradiation
|
Teichert, J.
|
|
1996
|
120 |
1-4 |
p. 311-314
4 p.
|
artikel
|
| 28 |
Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems
|
Volz, K.
|
|
1996
|
120 |
1-4 |
p. 133-138
6 p.
|
artikel
|
| 29 |
Ion-beam induced compositional changes in alloys at elevated temperatures
|
Sckerl, M.W.
|
|
1996
|
120 |
1-4 |
p. 221-225
5 p.
|
artikel
|
| 30 |
Ion beam induced nucleation in amorphous GaAs layers during MeV implantation
|
Schulz, R.
|
|
1996
|
120 |
1-4 |
p. 203-206
4 p.
|
artikel
|
| 31 |
Ion beam processing of single crystalline silicon carbide
|
Skorupa, W.
|
|
1996
|
120 |
1-4 |
p. 114-120
7 p.
|
artikel
|
| 32 |
Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures
|
Pérez-Rodríguez, A.
|
|
1996
|
120 |
1-4 |
p. 151-155
5 p.
|
artikel
|
| 33 |
Ion implantation doping of Si for optoelectronic applications
|
Coffa, S.
|
|
1996
|
120 |
1-4 |
p. 74-80
7 p.
|
artikel
|
| 34 |
Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study
|
Palard, M.
|
|
1996
|
120 |
1-4 |
p. 212-215
4 p.
|
artikel
|
| 35 |
Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects?
|
Omri, M.
|
|
1996
|
120 |
1-4 |
p. 5-8
4 p.
|
artikel
|
| 36 |
Large-area deposition of biaxially textured YSZ buffer layers using an IBAD-process
|
Wiesmann, J.
|
|
1996
|
120 |
1-4 |
p. 290-292
3 p.
|
artikel
|
| 37 |
Lattice disorder distribution and recovery in Hg implanted TiO2
|
Khubeis, I.
|
|
1996
|
120 |
1-4 |
p. 257-261
5 p.
|
artikel
|
| 38 |
Lattice location and electrical conductivity in ion implanted TiO2 single crystals
|
Fromknecht, R.
|
|
1996
|
120 |
1-4 |
p. 252-256
5 p.
|
artikel
|
| 39 |
Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method
|
Shima, Takayuki
|
|
1996
|
120 |
1-4 |
p. 293-297
5 p.
|
artikel
|
| 40 |
Low temperature epitaxial regrowth of mercury implanted sapphire
|
Alves, E.
|
|
1996
|
120 |
1-4 |
p. 248-251
4 p.
|
artikel
|
| 41 |
2 MeV Si ion implantation damage in relaxed Si1−x Ge x
|
O'Raifeartaigh, C.
|
|
1996
|
120 |
1-4 |
p. 165-168
4 p.
|
artikel
|
| 42 |
Microstructural characterization of amorphized and recrystallized 6H-SiC
|
Pacaud, Y.
|
|
1996
|
120 |
1-4 |
p. 181-185
5 p.
|
artikel
|
| 43 |
Modern applications of high energy ion beams: from “single-event burnout” to human eye cancer treatment
|
Homeyer, H.
|
|
1996
|
120 |
1-4 |
p. 303-310
8 p.
|
artikel
|
| 44 |
Monte Carlo simulation of ion implantation in crystalline SiC
|
Albertazzi, E.
|
|
1996
|
120 |
1-4 |
p. 147-150
4 p.
|
artikel
|
| 45 |
Morphology of the implantation induced disorder in GaAs
|
Desnica, U.V.
|
|
1996
|
120 |
1-4 |
p. 236-239
4 p.
|
artikel
|
| 46 |
Nuclear energy and cascade effects on the ion-assisted crystal nucleation in amorphous silicon
|
Spinella, C.
|
|
1996
|
120 |
1-4 |
p. 198-202
5 p.
|
artikel
|
| 47 |
Optical and structural properties of implanted silicon nanocrystals
|
Shimizu-Iwayama, Tsutomu
|
|
1996
|
120 |
1-4 |
p. 97-100
4 p.
|
artikel
|
| 48 |
Plasma immersion ion implantation for metallurgical and semiconductor research and development
|
Ensinger, W.
|
|
1996
|
120 |
1-4 |
p. 270-281
12 p.
|
artikel
|
| 49 |
Preface
|
Priolo, Francesco
|
|
1996
|
120 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 50 |
Proximity gettering of copper in separation-by-implanted-oxygen structures
|
Yankov, R.A.
|
|
1996
|
120 |
1-4 |
p. 60-63
4 p.
|
artikel
|
| 51 |
Radiation damage and annealing behaviour of Ge+-implanted SiC
|
Pacaud, Y.
|
|
1996
|
120 |
1-4 |
p. 177-180
4 p.
|
artikel
|
| 52 |
Radiation damage annealing of Hg implanted InP
|
Correia, J.G.
|
|
1996
|
120 |
1-4 |
p. 244-247
4 p.
|
artikel
|
| 53 |
Radiation damage in neutron transmutation doped-InP
|
Marí, B.
|
|
1996
|
120 |
1-4 |
p. 240-243
4 p.
|
artikel
|
| 54 |
Rapid thermal annealing of arsenic implanted relaxed Si1−x Ge x
|
Nylandsted Larsen, A.
|
|
1996
|
120 |
1-4 |
p. 161-164
4 p.
|
artikel
|
| 55 |
Refractive index and anisotropy measurements in He+ implanted KTiOPO4 (KTP) optical waveguides
|
Bindner, P.
|
|
1996
|
120 |
1-4 |
p. 88-92
5 p.
|
artikel
|
| 56 |
Room temperature migration of ion beam injected point defects in crystalline silicon
|
Privitera, Vittorio
|
|
1996
|
120 |
1-4 |
p. 9-13
5 p.
|
artikel
|
| 57 |
119Sn Mössbauer spectroscopy investigation of heavily P-doped silicon
|
Vestergaard, H.C.
|
|
1996
|
120 |
1-4 |
p. 33-36
4 p.
|
artikel
|
| 58 |
Sponsors
|
|
|
1996
|
120 |
1-4 |
p. viii-
1 p.
|
artikel
|
| 59 |
Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon
|
Myers, S.M.
|
|
1996
|
120 |
1-4 |
p. 43-50
8 p.
|
artikel
|
| 60 |
Structural modifications in He-implanted waveguide layers of LiNbO3
|
Avrahami, Y.
|
|
1996
|
120 |
1-4 |
p. 84-87
4 p.
|
artikel
|
| 61 |
Structure and strain measurements on SiC formed by carbon ion implantation
|
Preckwinkel, U.
|
|
1996
|
120 |
1-4 |
p. 125-128
4 p.
|
artikel
|
| 62 |
Studies of Na-segregation at Ni/α-quartz interfaces
|
Haussalo, P.
|
|
1996
|
120 |
1-4 |
p. 266-269
4 p.
|
artikel
|
| 63 |
Study of the trapping of CoFe impurities at the internal wall of nanosized Si voids
|
Deweerd, W.
|
|
1996
|
120 |
1-4 |
p. 51-55
5 p.
|
artikel
|
| 64 |
Surface regrowth of Sb ion implanted Si(100)
|
Petõ, G.
|
|
1996
|
120 |
1-4 |
p. 226-229
4 p.
|
artikel
|
| 65 |
Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge+ ion implanted layers in silicon
|
Songsiriritthigul, P.
|
|
1996
|
120 |
1-4 |
p. 207-211
5 p.
|
artikel
|
| 66 |
Time scales of transient enhanced diffusion: free and clustered interstitials
|
Cowern, N.E.B.
|
|
1996
|
120 |
1-4 |
p. 14-18
5 p.
|
artikel
|
| 67 |
Visible photoluminescence of SiO2 implanted with carbon and silicon
|
Garrido, B.
|
|
1996
|
120 |
1-4 |
p. 101-105
5 p.
|
artikel
|
| 68 |
Voids in silicon as sink for interstitials
|
Raineri, V.
|
|
1996
|
120 |
1-4 |
p. 56-59
4 p.
|
artikel
|
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