| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
|
Kaczer, B.
|
|
2018
|
81 |
C |
p. 186-194
|
article
|
| 2 |
A comparative analysis of microstructural features, tensile properties and wettability of hypoperitectic and peritectic Sn-Sb solder alloys
|
Dias, Marcelino
|
|
2018
|
81 |
C |
p. 150-158
|
article
|
| 3 |
A fast and flexible HW/SW co-processing framework for Time-of-Flight 3D imaging
|
Druml, Norbert
|
|
2018
|
81 |
C |
p. 64-76
|
article
|
| 4 |
Analysis of low isolation problem in HMC using Ishikawa model: A case study
|
Jayaprasad, G.
|
|
2018
|
81 |
C |
p. 195-200
|
article
|
| 5 |
A new hermetic sealing method for ceramic package using nanosilver sintering technology
|
Zhang, Hao
|
|
2018
|
81 |
C |
p. 143-149
|
article
|
| 6 |
An improved reliability model for Si and GaN power FET
|
Golan, Gady
|
|
2018
|
81 |
C |
p. 77-89
|
article
|
| 7 |
An improved unscented particle filter approach for lithium-ion battery remaining useful life prediction
|
Zhang, Heng
|
|
2018
|
81 |
C |
p. 288-298
|
article
|
| 8 |
A review of NBTI mechanisms and models
|
Mahapatra, Souvik
|
|
2018
|
81 |
C |
p. 127-135
|
article
|
| 9 |
A review on discoloration and high accelerated testing of optical materials in LED based-products
|
Yazdan Mehr, M.
|
|
2018
|
81 |
C |
p. 136-142
|
article
|
| 10 |
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance
|
Lenahan, P.M.
|
|
2018
|
81 |
C |
p. 1-6
|
article
|
| 11 |
Bias temperature instability in scaled CMOS technologies: A circuit perspective
|
Kerber, A.
|
|
2018
|
81 |
C |
p. 31-40
|
article
|
| 12 |
Considerations in printing conductive traces for high pulsed power applications
|
Aga, Roberto S.
|
|
2018
|
81 |
C |
p. 342-351
|
article
|
| 13 |
Controversial issues in negative bias temperature instability
|
Stathis, James H.
|
|
2018
|
81 |
C |
p. 244-251
|
article
|
| 14 |
Discovering and reducing defects in MIM capacitors
|
Roesch, William J.
|
|
2018
|
81 |
C |
p. 299-305
|
article
|
| 15 |
Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds
|
Gholamirad, Maryam
|
|
2018
|
81 |
C |
p. 210-217
|
article
|
| 16 |
Editorial Board
|
|
|
2018
|
81 |
C |
p. ii
|
article
|
| 17 |
Effect of solder bump shapes on underfill flow in flip-chip encapsulation using analytical, numerical and PIV experimental approaches
|
Ng, Fei Chong
|
|
2018
|
81 |
C |
p. 41-63
|
article
|
| 18 |
Fast identification of true critical paths in sequential circuits
|
Ubar, Raimund
|
|
2018
|
81 |
C |
p. 252-261
|
article
|
| 19 |
Fault tolerant encoders for Single Error Correction and Double Adjacent Error Correction codes
|
Liu, Shanshan
|
|
2018
|
81 |
C |
p. 167-173
|
article
|
| 20 |
Foreword to the special issue on 20th IEEE international symposium on design and diagnostics of electronic circuits and systems (DDECS2017)
|
Zoran, Stamenkovic
|
|
2018
|
81 |
C |
p. 287
|
article
|
| 21 |
Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery
|
Duong, Pham Luu Trung
|
|
2018
|
81 |
C |
p. 232-243
|
article
|
| 22 |
Influence of rotating magnetic field on solidification microstructure and tensile properties of Sn-Bi lead-free solders
|
El-Daly, A.A.
|
|
2018
|
81 |
C |
p. 352-361
|
article
|
| 23 |
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits
|
Ahn, W.
|
|
2018
|
81 |
C |
p. 262-273
|
article
|
| 24 |
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
|
Ma, Teng
|
|
2018
|
81 |
C |
p. 112-116
|
article
|
| 25 |
Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack
|
Jin, Minjung
|
|
2018
|
81 |
C |
p. 201-209
|
article
|
| 26 |
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits
|
Guo, Shaofeng
|
|
2018
|
81 |
C |
p. 101-111
|
article
|
| 27 |
Investigations and detections on a new BEOL dielectric failure mechanism at advanced technologies
|
Chien, Wei-Ting Kary
|
|
2018
|
81 |
C |
p. 368-372
|
article
|
| 28 |
Lifetime of electret microphones by thermal degradation analysis via electroacoustic measurements
|
Nogueira, E.
|
|
2018
|
81 |
C |
p. 95-100
|
article
|
| 29 |
Measurement considerations for evaluating BTI effects in SiC MOSFETs
|
Habersat, Daniel B.
|
|
2018
|
81 |
C |
p. 121-126
|
article
|
| 30 |
Mechanical stress effects on electrical breakdown of freestanding GaN thin films
|
Wang, Tun
|
|
2018
|
81 |
C |
p. 181-185
|
article
|
| 31 |
Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model
|
Ding, Lili
|
|
2018
|
81 |
C |
p. 337-341
|
article
|
| 32 |
On the origin of dynamic Ron in commercial GaN-on-Si HEMTs
|
Karboyan, Serge
|
|
2018
|
81 |
C |
p. 306-311
|
article
|
| 33 |
Performance variation of dark current density-voltage characteristics for PID-affected monocrystalline silicon solar modules from the field
|
Wang, He
|
|
2018
|
81 |
C |
p. 320-327
|
article
|
| 34 |
Prognostics of aluminum electrolytic capacitors using artificial neural network approach
|
Khera, Neeraj
|
|
2018
|
81 |
C |
p. 328-336
|
article
|
| 35 |
Random vibration analysis of 3-Arc-Fan compliant interconnects
|
Chung, Philip Y.
|
|
2018
|
81 |
C |
p. 7-21
|
article
|
| 36 |
Recovery behaviors in n-channel LTPS-TFTs under DC stress
|
Yan, Wei
|
|
2018
|
81 |
C |
p. 117-120
|
article
|
| 37 |
Reliability study of fiber-coupled photodiode module for operation at 4K
|
Bardalen, Eivind
|
|
2018
|
81 |
C |
p. 362-367
|
article
|
| 38 |
Risk of tin whiskers in the nuclear industry
|
Huang, Chien-Ming
|
|
2018
|
81 |
C |
p. 22-30
|
article
|
| 39 |
Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET
|
Kelley, Mitchell D.
|
|
2018
|
81 |
C |
p. 174-180
|
article
|
| 40 |
Susceptibility of flash ADCs to electromagnetic interference
|
Kennedy, Simon
|
|
2018
|
81 |
C |
p. 218-225
|
article
|
| 41 |
Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2S x treatment
|
Lin, Yow-Jon
|
|
2018
|
81 |
C |
p. 90-94
|
article
|
| 42 |
Thermal transient measurement and modelling of a power cycled flip-chip LED module
|
Mitterhuber, Lisa
|
|
2018
|
81 |
C |
p. 373-380
|
article
|
| 43 |
Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability
|
Mukhopadhyay, Subhadeep
|
|
2018
|
81 |
C |
p. 226-231
|
article
|
| 44 |
Towards AND/XOR balanced synthesis: Logic circuits rewriting with XOR
|
Háleček, Ivo
|
|
2018
|
81 |
C |
p. 274-286
|
article
|
| 45 |
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs
|
Sasaki, Hajime
|
|
2018
|
81 |
C |
p. 312-319
|
article
|
| 46 |
Using GA-SVM for defect inspection of flip chips based on vibration signals
|
Li, Ke
|
|
2018
|
81 |
C |
p. 159-166
|
article
|
Journal description