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                                       Details for article 6 of 46 found articles
 
 
  An improved reliability model for Si and GaN power FET
 
 
Title: An improved reliability model for Si and GaN power FET
Author: Golan, Gady
Azoulay, Moshe
Avraham, Tsuriel
Kremenetsky, Ilan
Bernstein, Joseph B.
Appeared in: Microelectronics reliability
Paging: Volume 81 (2018) nr. C pages 77-89
Year: 2018
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 46 found articles
 
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