| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced nanopattern formation by a subtractive self-organization process with focused ion beams
|
Lugstein, A.
|
|
2006
|
242 |
1-2 |
p. 93-95
3 p.
|
artikel
|
| 2 |
A model for damage caused by cluster implantation: Non-linear effect due to damage overlap
|
Shao, Lin
|
|
2006
|
242 |
1-2 |
p. 503-505
3 p.
|
artikel
|
| 3 |
Amorphization of carbon materials studied by X-ray photoelectron spectroscopy
|
Takahiro, Katsumi
|
|
2006
|
242 |
1-2 |
p. 445-447
3 p.
|
artikel
|
| 4 |
Amorphous carbon film deposition by PBII&D using shunting arc discharge
|
Yukimura, K.
|
|
2006
|
242 |
1-2 |
p. 321-323
3 p.
|
artikel
|
| 5 |
Analysis of cell-adhesion surface induced by ion-beam irradiation into biodegradable polymer
|
Yotoriyama, Tasuku
|
|
2006
|
242 |
1-2 |
p. 51-54
4 p.
|
artikel
|
| 6 |
Analysis of plasma and neutral gas flow inside of a PET bottle under PIII condition by particle-in-cell/Monte Carlo simulation
|
Miyagawa, Y.
|
|
2006
|
242 |
1-2 |
p. 341-345
5 p.
|
artikel
|
| 7 |
An ion-implanted standard for 11B
|
Todd, A.D.W.
|
|
2006
|
242 |
1-2 |
p. 572-575
4 p.
|
artikel
|
| 8 |
Anisotropic deformation of metallo-dielectric core–shell colloids under MeV ion irradiation
|
Penninkhof, J.J.
|
|
2006
|
242 |
1-2 |
p. 523-529
7 p.
|
artikel
|
| 9 |
Anomalous annealing behavior of isolated amorphous zones in silicon
|
Donnelly, S.E.
|
|
2006
|
242 |
1-2 |
p. 595-597
3 p.
|
artikel
|
| 10 |
Application of high energy ion beam for the control of boron diffusion
|
Shao, Lin
|
|
2006
|
242 |
1-2 |
p. 670-672
3 p.
|
artikel
|
| 11 |
Application of highly charged Ar ion beams to ion beam lithography
|
Momota, S.
|
|
2006
|
242 |
1-2 |
p. 247-249
3 p.
|
artikel
|
| 12 |
A review of radiation enhanced diffusion in perspective materials
|
Starostin, V.A.
|
|
2006
|
242 |
1-2 |
p. 402-405
4 p.
|
artikel
|
| 13 |
Argon ion beam voltages influence the microstructure of aluminum nitride films in a dual ion beam sputtering system
|
Chen, Hong-Ying
|
|
2006
|
242 |
1-2 |
p. 396-398
3 p.
|
artikel
|
| 14 |
Ar implantation of InSb and AlN at 15K
|
Wendler, E.
|
|
2006
|
242 |
1-2 |
p. 562-564
3 p.
|
artikel
|
| 15 |
Ar/O2 gas pressure dependence of atomic concentration of zirconia prepared by zirconium pulse arc PBII&D
|
Yukimura, Ken
|
|
2006
|
242 |
1-2 |
p. 318-320
3 p.
|
artikel
|
| 16 |
A study on the electronic stopping of protons in soft biological matter
|
Emfietzoglou, D.
|
|
2006
|
242 |
1-2 |
p. 55-60
6 p.
|
artikel
|
| 17 |
Atomic level imaging of Au nanocluster dispersed in TiO2 and SrTiO3
|
Wang, C.M.
|
|
2006
|
242 |
1-2 |
p. 380-382
3 p.
|
artikel
|
| 18 |
Author index
|
|
|
2006
|
242 |
1-2 |
p. 696-712
17 p.
|
artikel
|
| 19 |
BF 2 + ion implantation in strained-Si/SiGe/Si hetero-structures
|
Morioka, J.
|
|
2006
|
242 |
1-2 |
p. 630-632
3 p.
|
artikel
|
| 20 |
Bioactivity of plasma implanted biomaterials
|
Chu, Paul K.
|
|
2006
|
242 |
1-2 |
p. 1-7
7 p.
|
artikel
|
| 21 |
Biocompatibility of modified ePTFE for an artificial dura mater
|
Takahashi, N.
|
|
2006
|
242 |
1-2 |
p. 61-64
4 p.
|
artikel
|
| 22 |
Blistering effects of low energy hydrogen and helium ions implanted in GaAs(100) crystals
|
Giguère, A.
|
|
2006
|
242 |
1-2 |
p. 620-622
3 p.
|
artikel
|
| 23 |
Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation
|
Yang, P.
|
|
2006
|
242 |
1-2 |
p. 15-17
3 p.
|
artikel
|
| 24 |
Carbon protrusions on PTFE surface prepared by ion irradiation and chemical defluorination
|
Kobayashi, T.
|
|
2006
|
242 |
1-2 |
p. 338-340
3 p.
|
artikel
|
| 25 |
Cell adhesion to nitrogen-doped DLCS fabricated by plasma-based ion implantation and deposition method
|
Yokota, T.
|
|
2006
|
242 |
1-2 |
p. 48-50
3 p.
|
artikel
|
| 26 |
Characteristics of ion-beam-synthesized molybdenum silicide film
|
Liang, J.H.
|
|
2006
|
242 |
1-2 |
p. 598-601
4 p.
|
artikel
|
| 27 |
Characterization of neon cavity in silicon
|
Peripolli, S.
|
|
2006
|
242 |
1-2 |
p. 494-497
4 p.
|
artikel
|
| 28 |
Characterization of sulfur-doped TiO2 films by RBS/C
|
Yamamoto, S.
|
|
2006
|
242 |
1-2 |
p. 377-379
3 p.
|
artikel
|
| 29 |
Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence
|
Ishimaru, Manabu
|
|
2006
|
242 |
1-2 |
p. 473-475
3 p.
|
artikel
|
| 30 |
Cluster size dependence of sputtering yield by cluster ion beam irradiation
|
Seki, T.
|
|
2006
|
242 |
1-2 |
p. 179-181
3 p.
|
artikel
|
| 31 |
Committees
|
|
|
2006
|
242 |
1-2 |
p. ix-
1 p.
|
artikel
|
| 32 |
Contents
|
|
|
2006
|
242 |
1-2 |
p. x-xvi
nvt p.
|
artikel
|
| 33 |
Correlation between RBS, reflectometry and ellipsometry data for TiO2 films deposited on Si
|
Gerlach, J.W.
|
|
2006
|
242 |
1-2 |
p. 289-292
4 p.
|
artikel
|
| 34 |
Correlation between structural evolution and photoluminescence of Sn nanoclusters in SiO2 layers
|
Lopes, J.M.J.
|
|
2006
|
242 |
1-2 |
p. 157-160
4 p.
|
artikel
|
| 35 |
Crack-arresting compression layers produced by ion implantation
|
Gurarie, V.N.
|
|
2006
|
242 |
1-2 |
p. 421-423
3 p.
|
artikel
|
| 36 |
Current research topics and applications of gas cluster ion beam processes
|
Yamada, Isao
|
|
2006
|
242 |
1-2 |
p. 143-145
3 p.
|
artikel
|
| 37 |
Damage induced in high energy helium-implanted 4H-SiC
|
Leclerc, S.
|
|
2006
|
242 |
1-2 |
p. 399-401
3 p.
|
artikel
|
| 38 |
Damages in ceramics for nuclear waste transmutation by irradiation with swift heavy ions
|
Beauvy, Michel
|
|
2006
|
242 |
1-2 |
p. 557-561
5 p.
|
artikel
|
| 39 |
Development of size-selected cluster ion irradiation system
|
Toyoda, N.
|
|
2006
|
242 |
1-2 |
p. 466-468
3 p.
|
artikel
|
| 40 |
Diffusion limited Cu and Au nanocrystal formation in thin film SiO2
|
Johannessen, B.
|
|
2006
|
242 |
1-2 |
p. 133-136
4 p.
|
artikel
|
| 41 |
Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements
|
Otto, G.
|
|
2006
|
242 |
1-2 |
p. 667-669
3 p.
|
artikel
|
| 42 |
Dot-array implantation for patterned doping of semiconductors
|
Wanzenboeck, H.D.
|
|
2006
|
242 |
1-2 |
p. 257-260
4 p.
|
artikel
|
| 43 |
Droplet-free high-density metal ion source for plasma immersion ion implantation
|
Nakamura, Keiji
|
|
2006
|
242 |
1-2 |
p. 315-317
3 p.
|
artikel
|
| 44 |
Dynamical behavior of helium bubbles in gold during irradiation with high-energy self-ions
|
Ono, K.
|
|
2006
|
242 |
1-2 |
p. 455-457
3 p.
|
artikel
|
| 45 |
Editorial
|
|
|
2006
|
242 |
1-2 |
p. vii-viii
nvt p.
|
artikel
|
| 46 |
Editorial board
|
|
|
2006
|
242 |
1-2 |
p. CO2-
1 p.
|
artikel
|
| 47 |
Effect of Fe and Ar implantation on the resistivity of Cr films
|
Heck, C.
|
|
2006
|
242 |
1-2 |
p. 137-139
3 p.
|
artikel
|
| 48 |
Effect of implanted helium on thermal diffusivities of SiC/SiC composites
|
Taguchi, T.
|
|
2006
|
242 |
1-2 |
p. 469-472
4 p.
|
artikel
|
| 49 |
Effect of ion beam implantation on density of DLC prepared by plasma-based ion implantation and deposition
|
Oka, Y.
|
|
2006
|
242 |
1-2 |
p. 335-337
3 p.
|
artikel
|
| 50 |
Effect of irradiation temperature on dynamic recovery in gallium nitride
|
Jiang, W.
|
|
2006
|
242 |
1-2 |
p. 431-433
3 p.
|
artikel
|
| 51 |
Effect of low energy ion beam irradiation on wettability of narra (Pterocarpus indicus) wood chips
|
Ramos, Henry J.
|
|
2006
|
242 |
1-2 |
p. 41-44
4 p.
|
artikel
|
| 52 |
Effect of positive pulses on the microstructure and mechanical properties of diamond-like carbon films deposited by PBII
|
Choi, Junho
|
|
2006
|
242 |
1-2 |
p. 357-359
3 p.
|
artikel
|
| 53 |
Effect of substrate temperature on the radiation damage from MeV Si implantation in Si
|
Yu, X.K.
|
|
2006
|
242 |
1-2 |
p. 434-436
3 p.
|
artikel
|
| 54 |
Effect of tantalum content of titanium oxide film fabricated by magnetron sputtering on the behavior of cultured human umbilical vein endothelial cells (HUVEC)
|
Chen, J.Y.
|
|
2006
|
242 |
1-2 |
p. 26-29
4 p.
|
artikel
|
| 55 |
Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence
|
Kling, A.
|
|
2006
|
242 |
1-2 |
p. 650-652
3 p.
|
artikel
|
| 56 |
Effects of ion beam modification on absorption and transport of hydrogen in perovskite-type oxide ceramics
|
Tsuchiya, B.
|
|
2006
|
242 |
1-2 |
p. 588-590
3 p.
|
artikel
|
| 57 |
Effects of ion irradiation on metallic nanocrystals formed by ion beam synthesis in SiO2
|
Kluth, Patrick
|
|
2006
|
242 |
1-2 |
p. 458-460
3 p.
|
artikel
|
| 58 |
Effects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition
|
Yokota, Katsuhiro
|
|
2006
|
242 |
1-2 |
p. 393-395
3 p.
|
artikel
|
| 59 |
Effects of target bias voltage on the electrical conductivity of DLC films deposited by PBII/D with a bipolar pulse
|
Miyagawa, S.
|
|
2006
|
242 |
1-2 |
p. 346-348
3 p.
|
artikel
|
| 60 |
Elastic nano-structure of diamond-like carbon (DLC)
|
Ogiso, Hisato
|
|
2006
|
242 |
1-2 |
p. 311-314
4 p.
|
artikel
|
| 61 |
Electrical profiles of 20nm junctions in Sb implanted silicon
|
Alzanki, T.
|
|
2006
|
242 |
1-2 |
p. 693-695
3 p.
|
artikel
|
| 62 |
Electrical properties of n-type layers formed in GaN by Si implantation
|
Furuhashi, Y.
|
|
2006
|
242 |
1-2 |
p. 633-636
4 p.
|
artikel
|
| 63 |
Electronic excitation effects on nanoparticle formation in insulators under heavy-ion implantation
|
Kishimoto, N.
|
|
2006
|
242 |
1-2 |
p. 186-189
4 p.
|
artikel
|
| 64 |
Electronic stopping powers for Be, Ca and Ti in SiC
|
Zhang, Y.
|
|
2006
|
242 |
1-2 |
p. 82-84
3 p.
|
artikel
|
| 65 |
Erbium-implanted silica microsphere laser
|
Kalkman, J.
|
|
2006
|
242 |
1-2 |
p. 182-185
4 p.
|
artikel
|
| 66 |
Estimation of nitrogen ion energy calculated using distribution for nitrogen in Si implanted by PBII
|
Tanaka, T.
|
|
2006
|
242 |
1-2 |
p. 371-373
3 p.
|
artikel
|
| 67 |
Evaluation of collagen immobilized to silicon plates by ion beam
|
Yokoyama, Y.
|
|
2006
|
242 |
1-2 |
p. 37-40
4 p.
|
artikel
|
| 68 |
Experimental evidence of Si nanocluster δ-layer formation in the vicinity of ion-irradiated SiO2–Si interfaces
|
Röntzsch, Lars
|
|
2006
|
242 |
1-2 |
p. 149-151
3 p.
|
artikel
|
| 69 |
Extended-type defects created by high temperature helium implantation into silicon
|
Beaufort, M.F.
|
|
2006
|
242 |
1-2 |
p. 565-567
3 p.
|
artikel
|
| 70 |
Fabrication of phosphor micro-grids using proton beam lithography
|
Auzelyte, V.
|
|
2006
|
242 |
1-2 |
p. 253-256
4 p.
|
artikel
|
| 71 |
Film synthesis of MgB2 by ion ablation of high-energy pulsed power
|
Fudamoto, Y.
|
|
2006
|
242 |
1-2 |
p. 360-362
3 p.
|
artikel
|
| 72 |
Fluorine incorporation during Si solid phase epitaxy
|
Impellizzeri, G.
|
|
2006
|
242 |
1-2 |
p. 614-616
3 p.
|
artikel
|
| 73 |
Formation of cobalt silicide films by ion beam deposition
|
Zhang, Y.
|
|
2006
|
242 |
1-2 |
p. 602-604
3 p.
|
artikel
|
| 74 |
Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage
|
Höchbauer, T.
|
|
2006
|
242 |
1-2 |
p. 623-626
4 p.
|
artikel
|
| 75 |
Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation
|
Kasai, M.
|
|
2006
|
242 |
1-2 |
p. 240-243
4 p.
|
artikel
|
| 76 |
Formation of mono-layered gold nanoparticles in shallow depth of SiO2 thin film by low-energy negative-ion implantation
|
Tsuji, H.
|
|
2006
|
242 |
1-2 |
p. 125-128
4 p.
|
artikel
|
| 77 |
Formation of silver incorporated calcium phosphate film for medical applications
|
Lee, In-Seop
|
|
2006
|
242 |
1-2 |
p. 45-47
3 p.
|
artikel
|
| 78 |
Formation of silver nanoparticles aligned near the bottom of SiO2 film on silicon substrate by negative-ion implantation and post-annealing
|
Arai, N.
|
|
2006
|
242 |
1-2 |
p. 217-220
4 p.
|
artikel
|
| 79 |
Formation of transparent ZnO layers by MePIIID
|
Mändl, S.
|
|
2006
|
242 |
1-2 |
p. 293-295
3 p.
|
artikel
|
| 80 |
Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation
|
Amekura, H.
|
|
2006
|
242 |
1-2 |
p. 96-99
4 p.
|
artikel
|
| 81 |
Gas cluster ion beam infusion processing of semiconductors
|
MacCrimmon, R.
|
|
2006
|
242 |
1-2 |
p. 427-430
4 p.
|
artikel
|
| 82 |
Gettering of Pd and Cu by nanocavities and dislocations in Si
|
Brett, D.A.
|
|
2006
|
242 |
1-2 |
p. 576-579
4 p.
|
artikel
|
| 83 |
Grain growth in Zr–Fe thin films during in situ ion irradiation in a TEM
|
Kaoumi, D.
|
|
2006
|
242 |
1-2 |
p. 490-493
4 p.
|
artikel
|
| 84 |
Group III impurities – Si interstitials interaction caused by ion irradiation
|
Romano, L.
|
|
2006
|
242 |
1-2 |
p. 646-649
4 p.
|
artikel
|
| 85 |
High-energy Au implantation of GaAs at 16K
|
Lauck, R.
|
|
2006
|
242 |
1-2 |
p. 484-486
3 p.
|
artikel
|
| 86 |
High-energy ion tracks in thin films
|
Follstaedt, David M.
|
|
2006
|
242 |
1-2 |
p. 79-81
3 p.
|
artikel
|
| 87 |
High-temperature behavior of zirconia and spinel doped with cesium
|
Enescu, S.E.
|
|
2006
|
242 |
1-2 |
p. 409-412
4 p.
|
artikel
|
| 88 |
How chemistry affects the ion beam synthesis of PbS nanocrystals
|
Espiau de Lamaestre, R.
|
|
2006
|
242 |
1-2 |
p. 214-216
3 p.
|
artikel
|
| 89 |
Hydrogen up-take in noble gas implanted W
|
Nagata, S.
|
|
2006
|
242 |
1-2 |
p. 553-556
4 p.
|
artikel
|
| 90 |
Identification and morphology of point defect clusters created in displacement cascades in α-zirconium
|
Voskoboinikov, R.E.
|
|
2006
|
242 |
1-2 |
p. 530-533
4 p.
|
artikel
|
| 91 |
Ignition and dynamics of high-voltage glow discharge plasma implantation
|
Fu, Ricky K.Y.
|
|
2006
|
242 |
1-2 |
p. 275-278
4 p.
|
artikel
|
| 92 |
Improvement on corrosion resistance of NiTi orthopedic materials by carbon plasma immersion ion implantation
|
Poon, Ray W.Y.
|
|
2006
|
242 |
1-2 |
p. 270-274
5 p.
|
artikel
|
| 93 |
Incorporation of active Fe impurities in GaInP by high temperature ion implantation
|
Cesca, T.
|
|
2006
|
242 |
1-2 |
p. 653-655
3 p.
|
artikel
|
| 94 |
Indentation method to measure the residual stress induced by ion implantation
|
Wang, Q.
|
|
2006
|
242 |
1-2 |
p. 88-92
5 p.
|
artikel
|
| 95 |
Influence of thermal treatment on photoluminescence of Er-doped Si-rich SiO2 prepared by ion implantation
|
Zhang, C.S.
|
|
2006
|
242 |
1-2 |
p. 279-281
3 p.
|
artikel
|
| 96 |
In situ transmission electron microscopy studies of radiation damage in copper indium diselenide
|
Donnelly, S.E.
|
|
2006
|
242 |
1-2 |
p. 686-689
4 p.
|
artikel
|
| 97 |
Interactions of ethanol cluster ion beams with silicon surfaces
|
Takaoka, G.H.
|
|
2006
|
242 |
1-2 |
p. 417-420
4 p.
|
artikel
|
| 98 |
Investigation of the structural properties of ferromagnetic Mn-implanted Si
|
Bolduc, M.
|
|
2006
|
242 |
1-2 |
p. 367-370
4 p.
|
artikel
|
| 99 |
In vitro platelet adhesion and activation of polyethylene terephthalate modified by acetylene plasma immersion ion implantation and deposition
|
Wang, J.
|
|
2006
|
242 |
1-2 |
p. 12-14
3 p.
|
artikel
|
| 100 |
Ion beam analysis of VLS grown Ge nanostructures on Si
|
Taraci, J.L.
|
|
2006
|
242 |
1-2 |
p. 205-208
4 p.
|
artikel
|
| 101 |
Ion beam current dependence of compositions and resistivities on titanium nitride films deposited onto silicon by an ion beam assisted deposition method
|
Yokota, Katsuhiro
|
|
2006
|
242 |
1-2 |
p. 390-392
3 p.
|
artikel
|
| 102 |
Ion-beam implantation and cross-sectional TEM characterization of Gd2Ti2O7 pyrochlore
|
Lian, Jie
|
|
2006
|
242 |
1-2 |
p. 448-451
4 p.
|
artikel
|
| 103 |
Ion beam irradiation and characterization of GaAs based hetero-structures
|
Dhamodaran, S.
|
|
2006
|
242 |
1-2 |
p. 538-541
4 p.
|
artikel
|
| 104 |
Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field
|
Kalitzova, M.
|
|
2006
|
242 |
1-2 |
p. 209-213
5 p.
|
artikel
|
| 105 |
Ion bombardment induced formation of micro-craters in plant cell envelopes
|
Sangyuenyongpipat, S.
|
|
2006
|
242 |
1-2 |
p. 8-11
4 p.
|
artikel
|
| 106 |
Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy
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Shao, Lin
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2006
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p. 509-511
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artikel
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| 107 |
Ion-implantation and characterization of 32P-radioactive platinum coils for endovascular treatment of intracranial aneurysms
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Leblanc, Philippe
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2006
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242 |
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p. 173-178
6 p.
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Ion implantation into concave polymer surface
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Sakudo, N.
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2006
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p. 349-352
4 p.
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artikel
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| 109 |
Ion-induced optical response of nanocomposites in sapphire
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Plaksin, O.A.
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2006
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242 |
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p. 118-120
3 p.
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artikel
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| 110 |
Ion-irradiation induced stress relaxation in metallic thin films and multilayers grown by ion beam sputtering
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Debelle, A.
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2006
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242 |
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p. 461-465
5 p.
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| 111 |
Ion irradiation of porous silicon: The role of surface states
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Jacobsohn, L.G.
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2006
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242 |
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p. 164-166
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Ion irradiation through SiO2/Si interfaces: Non-conventional fabrication of Si nanocrystals for memory applications
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Schmidt, B.
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2006
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242 |
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p. 146-148
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| 113 |
Irradiation fluence dependent microstructural evolution of porous InSb
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Kluth, S.M.
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2006
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p. 640-642
3 p.
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ITO surface smoothing with argon cluster ion beam
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Heck, C.
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2006
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242 |
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p. 140-142
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artikel
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| 115 |
Kinetic mechanisms in ion-induced ripple formation on Cu(001) surfaces
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Chason, Eric
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2006
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242 |
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p. 232-236
5 p.
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artikel
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| 116 |
Low energy ion beam induced changes in ETFE polymer
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Parada, M.A.
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2006
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242 |
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p. 550-552
3 p.
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artikel
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| 117 |
Magnetic field effects on secondary electrons emitted during ion implantation in vacuum arc plasmas
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Tan, I.H.
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2006
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242 |
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p. 332-334
3 p.
|
artikel
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| 118 |
Magnetic nano-particles of Ni in MgO single crystals by ion implantation
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Zhu, S.
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2006
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242 |
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p. 114-117
4 p.
|
artikel
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| 119 |
Mass dependent surface interface modification of Ag/Co films under controlled ion beam irradiation
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Kundu, S.
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2006
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242 |
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p. 542-545
4 p.
|
artikel
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| 120 |
Maximizing light emission from silicon nanocrystals – The role of hydrogen
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Wilkinson, A.R.
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2006
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242 |
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p. 303-306
4 p.
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artikel
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| 121 |
Measurement of ion current distribution on a three-dimensional workpiece in the positive pulse bias PBII
|
Ikehata, T.
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2006
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242 |
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p. 383-386
4 p.
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artikel
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| 122 |
593MeV Au irradiation of InP, GaP, GaAs and AlAs
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Wesch, W.
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2006
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242 |
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p. 363-366
4 p.
|
artikel
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| 123 |
MeV ion beam deformation of colloidal silica particles
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Cheang-Wong, J.C.
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2006
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242 |
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p. 452-454
3 p.
|
artikel
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| 124 |
Microstructural change with annealing of SiC irradiated with Ne at 573–673K
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Aihara, J.
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2006
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242 |
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p. 441-444
4 p.
|
artikel
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| 125 |
Microstructure characteristics of steel M50 implanted with nitrogen by plasma-based ion implantation at elevated temperature
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Xu, Shuyan
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2006
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242 |
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p. 374-376
3 p.
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artikel
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| 126 |
Modelling of ion implantation in SiC crystals
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Chakarov, Ivan
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2006
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242 |
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p. 690-692
3 p.
|
artikel
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| 127 |
Modification of thin SIMOX film into β-FeSi2 via dry processes
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Shimura, K.
|
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2006
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242 |
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p. 676-678
3 p.
|
artikel
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| 128 |
Molecular dynamics simulations of surface modification and damage formation by gas cluster ion impacts
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Aoki, Takaaki
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2006
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242 |
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p. 517-519
3 p.
|
artikel
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| 129 |
Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation
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Zirkelbach, F.
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2006
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242 |
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p. 679-682
4 p.
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artikel
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| 130 |
Morphology of ion sputtered Cu(001) surface: Transition from unidirectional roughening to bidirectional roughening
|
Chan, Wai Lun
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2006
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242 |
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p. 228-231
4 p.
|
artikel
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| 131 |
Nano-fabrication using electron-beam-induced deposition combined with low energy ion milling
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Mitsuishi, K.
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2006
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242 |
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p. 244-246
3 p.
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artikel
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| 132 |
Nanoscale Bi x Te3/Sb2Te3 multilayer thin film materials for reduced thermal conductivity
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Xiao, Z.
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2006
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242 |
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p. 201-204
4 p.
|
artikel
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| 133 |
Nanoscale patterning of composition and chemical order induced by displacement cascades in irradiated alloys
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Ye, Jia
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2006
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242 |
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p. 265-269
5 p.
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artikel
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| 134 |
Nanostructure formation of SiC using ion implantation and CMP
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Eryu, O.
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2006
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242 |
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p. 237-239
3 p.
|
artikel
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| 135 |
Optical doping of AlN by rare earth implantation
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Lorenz, K.
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2006
|
242 |
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p. 307-310
4 p.
|
artikel
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| 136 |
Optical investigation of the propagation of the amorphous–crystalline boundary in ion-beam irradiated LiNbO3
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Olivares, J.
|
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2006
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242 |
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p. 534-537
4 p.
|
artikel
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| 137 |
Optical properties of amorphous carbon films implanted with nitrogen
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Abe, K.
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2006
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242 |
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p. 637-639
3 p.
|
artikel
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| 138 |
Optical properties tailoring by high fluence implantation of Ag ions on sapphire
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Marques, C.
|
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2006
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242 |
1-2 |
p. 104-108
5 p.
|
artikel
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| 139 |
Optical switching performance of metal nanoparticles fabricated by negative ion implantation
|
Takeda, Y.
|
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2006
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242 |
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p. 194-197
4 p.
|
artikel
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| 140 |
Phase formation in Ti after high fluence/high temperature nitrogen implantation
|
Manova, D.
|
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2006
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242 |
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p. 282-284
3 p.
|
artikel
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| 141 |
Photocatalytic properties of sol–gel titania film under fluorescent-light irradiation improved by silver negative-ion implantation
|
Tsuji, Hiroshi
|
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2006
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242 |
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p. 129-132
4 p.
|
artikel
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| 142 |
Photoluminescence behavior of silicon nanocrystals produced by hot implantation in SiO2
|
Sias, U.S.
|
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2006
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242 |
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p. 109-113
5 p.
|
artikel
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| 143 |
Photoluminescence of β-FeSi2 thin film prepared by ion beam sputter deposition method
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Shimura, K.
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2006
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242 |
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p. 673-675
3 p.
|
artikel
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| 144 |
Photoluminescence of He-implanted ZnO
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Hamby, D.W.
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2006
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242 |
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p. 663-666
4 p.
|
artikel
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| 145 |
Plasma implantation using high-energy ions and short high voltage pulses
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Rossi, J.O.
|
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2006
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242 |
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p. 328-331
4 p.
|
artikel
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| 146 |
Post-annealing sequence effects on the characteristics of 20keV BF2 ion implantation at various ion fluences
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Liang, J.H.
|
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2006
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242 |
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p. 605-609
5 p.
|
artikel
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| 147 |
Preferential amorphisation of Ge nanocrystals in a silica matrix
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Ridgway, M.C.
|
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2006
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242 |
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p. 121-124
4 p.
|
artikel
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| 148 |
Production and accumulation of a mA-DC bismuth ion beam
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Schlegel, Christian
|
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2006
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242 |
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p. 65-67
3 p.
|
artikel
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| 149 |
Production of liquid cluster ions and their application to surface etching
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Takaoka, G.H.
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2006
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242 |
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p. 100-103
4 p.
|
artikel
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| 150 |
Properties of zinc oxide thin films bombarded with 5MeV silicon ions
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Muntele, I.
|
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2006
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242 |
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p. 512-516
5 p.
|
artikel
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| 151 |
Proton beam lithography at the University of Surrey’s Ion Beam Centre
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Mistry, P.
|
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2006
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242 |
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p. 387-389
3 p.
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artikel
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| 152 |
Quantitative analysis of radiation-induced disorder in spinel crystals
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Thomé, L.
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2006
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242 |
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p. 643-645
3 p.
|
artikel
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| 153 |
Radiation effects on MgAl2O4-stabilized zirconia composite material irradiated with Ne+ ions
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Hojo, T.
|
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2006
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242 |
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p. 476-479
4 p.
|
artikel
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| 154 |
Radiation-induced luminescence from sol-gel silica glasses and phosphosilicate glasses by 1MeV H+ and 3MeV Zr2+ irradiations
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Kitazawa, Sin-iti
|
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2006
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242 |
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p. 406-408
3 p.
|
artikel
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| 155 |
Random and channeling stopping power of H in Si below 100keV
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Hobler, G.
|
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2006
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242 |
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p. 617-619
3 p.
|
artikel
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| 156 |
Rapid amorphization in In x Ga1−x As alloys at temperatures between 15K and 300K
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Wesch, W.
|
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2006
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242 |
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p. 480-483
4 p.
|
artikel
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| 157 |
Recovery of the Si–SiO2 interface studied by self-diffusion after high fluence ion implantation of 28Si
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Karl, H.
|
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2006
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242 |
1-2 |
p. 683-685
3 p.
|
artikel
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| 158 |
Recrystallization process of phosphorus ion implanted 4H–SiC(112−0)
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Satoh, M.
|
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2006
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242 |
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p. 627-629
3 p.
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artikel
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| 159 |
Relaxation of craters produced by ion bombardment on PMMA as a function of temperature
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Papaléo, R.M.
|
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2006
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242 |
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p. 190-193
4 p.
|
artikel
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| 160 |
Research on nitrogen implantation energy dependence of the properties of SIMON materials
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Zhang, E.X.
|
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2006
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242 |
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p. 585-587
3 p.
|
artikel
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| 161 |
Role of Si self-interstitials on the electrical de-activation of B doped Si
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Piro, A.M.
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2006
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242 |
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p. 656-658
3 p.
|
artikel
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| 162 |
Self-assembled nano-scale multilayer formation using physical vapor deposition methods
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Ronning, C.
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2006
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242 |
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p. 261-264
4 p.
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artikel
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| 163 |
Shape modifications of self-organised colloidal silica nanomasks on silicon
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Lindner, J.K.N.
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2006
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242 |
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p. 167-169
3 p.
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artikel
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| 164 |
Size dependent epitaxial cluster deposition: The effect of deposition energy
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Meinander, K.
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2006
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242 |
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p. 161-163
3 p.
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artikel
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| 165 |
Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study
|
Ruffell, S.
|
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2006
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242 |
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p. 591-594
4 p.
|
artikel
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| 166 |
Spatial distribution of irradiation effects on silica glass induced by 15-MeV oxygen ion microbeam
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Nishikawa, H.
|
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2006
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242 |
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p. 437-440
4 p.
|
artikel
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| 167 |
Stability and luminescence studies of Tm and Er implanted ZnO single crystals
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Rita, E.
|
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2006
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242 |
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p. 580-584
5 p.
|
artikel
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| 168 |
Statistics of primary damage creation in high-energy displacement cascades in copper and zirconium
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Voskoboinikov, R.E.
|
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2006
|
242 |
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p. 68-70
3 p.
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artikel
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| 169 |
Strain relaxation of pseudomorphic Si1−x Ge x /Si(100) heterostructures by Si+ ion implantation
|
Holländer, B.
|
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2006
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242 |
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p. 568-571
4 p.
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artikel
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| 170 |
Structural investigation of CdSSe-nanocrystals synthesized by ion-beam-implantation
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Huber, P.
|
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2006
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242 |
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p. 170-172
3 p.
|
artikel
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| 171 |
Structure of defect cascades in heavy ions-irradiated nickel by X-ray diffuse scattering
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Maeta, H.
|
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2006
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242 |
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p. 546-549
4 p.
|
artikel
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| 172 |
Studies of the composition, mechanical and electrical properties of N-doped carbon films prepared by DC-MFCAD
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Wen, F.
|
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2006
|
242 |
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p. 324-327
4 p.
|
artikel
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| 173 |
Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering
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Yao, Zh.Q.
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2006
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242 |
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p. 33-36
4 p.
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artikel
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| 174 |
Surface erosion by highly-charged ions
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Insepov, Z.
|
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2006
|
242 |
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p. 498-502
5 p.
|
artikel
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| 175 |
Surface modification of coronary artery stent by Ti–O/Ti–N complex film coating prepared with plasma immersion ion implantation and deposition
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Huang, N.
|
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2006
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242 |
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p. 18-21
4 p.
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artikel
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| 176 |
Surface modification of polymeric substrates by plasma-based ion implantation
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Okuji, S.
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2006
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242 |
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p. 353-356
4 p.
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artikel
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| 177 |
Surface wettabiliy of nitrogen plasma-implanted silicon
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Wan, G.J.
|
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2006
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242 |
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p. 296-299
4 p.
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artikel
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| 178 |
Swift heavy-ion induced trap generation and mixing at Si/SiO2 interface in depletion n-MOS
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Shinde, N.
|
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2006
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242 |
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p. 659-662
4 p.
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artikel
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| 179 |
Swift heavy ion irradiation of amorphous silicon
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Hedler, A.
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2006
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242 |
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p. 85-87
3 p.
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artikel
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| 180 |
Synthesis of room-temperature ferromagnetic Cr-doped TiO2(110) rutile single crystals using ion implantation
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Shutthanandan, V.
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2006
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242 |
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p. 198-200
3 p.
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| 181 |
TEM characterization of Au nano-particles in TiO2 single crystals by ion implantation
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Zhu, S.
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2006
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242 |
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p. 152-156
5 p.
|
artikel
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| 182 |
The biocompatibility of the tantalum and tantalum oxide films synthesized by pulse metal vacuum arc source deposition
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Leng, Y.X.
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2006
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242 |
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p. 30-32
3 p.
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artikel
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| 183 |
The computer simulation of cluster induced desorption of molecules
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Webb, Roger
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2006
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242 |
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p. 413-416
4 p.
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| 184 |
The effect of ion-beam specimen preparation techniques on vacancy-type defects in silicon
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Gandy, A.S.
|
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2006
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242 |
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p. 610-613
4 p.
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artikel
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| 185 |
The energy dependence of excessive vacancies created by high energy Si+ ion implantation in Si
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Shao, Lin
|
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2006
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242 |
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p. 506-508
3 p.
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| 186 |
The ORNL multicharged ion research facility upgrade project
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Meyer, F.W.
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2006
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p. 71-78
8 p.
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artikel
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| 187 |
The role of energetic ions from plasma in the creation of nanostructured materials and stable polymer surface treatments
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Bilek, M.M.M.
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2006
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242 |
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p. 221-227
7 p.
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| 188 |
Three-dimensional GaN nano-structure fabrication by focused ion beam chemical vapor deposition
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Nagata, T.
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2006
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242 |
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p. 250-252
3 p.
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artikel
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| 189 |
Use of ion beams to simulate reaction of reactor fuels with their cladding
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Birtcher, R.C.
|
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2006
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242 |
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p. 487-489
3 p.
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| 190 |
Variable lattice expansion in martensitic stainless steel after nitrogen ion implantation
|
Manova, D.
|
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2006
|
242 |
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p. 285-288
4 p.
|
artikel
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| 191 |
Water plasma implantation/oxidation of magnesium alloys for corrosion resistance
|
Tian, X.B.
|
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2006
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242 |
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p. 300-302
3 p.
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| 192 |
Wettability and biocompatibility of nitrogen-doped hydrogenated amorphous carbon films: Effect of nitrogen
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Yang, P.
|
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2006
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242 |
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p. 22-25
4 p.
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| 193 |
Xe+-irradiation effects on multilayer thin-film optical surfaces in EUV lithography
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Allain, J.P.
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2006
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242 |
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p. 520-522
3 p.
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| 194 |
Zinc-blende aluminum nitride formation using low-energy ion beam assisted deposition
|
Matsumoto, T.
|
|
2006
|
242 |
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p. 424-426
3 p.
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artikel
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