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Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy |
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Titel: |
Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy |
Auteur: |
Shao, Lin Lee, J.K. Höchbauer, T. Nastasi, M. Thompson, Phillip E. Rusakova, I. Seo, H.W. Chen, Q.Y. Liu, J.R. Chu, Wei-Kan |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 242 (2006) nr. 1-2 pagina's 3 p. |
Jaar: |
2006 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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