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                                       Details for article 158 of 194 found articles
 
 
  Recrystallization process of phosphorus ion implanted 4H–SiC(112−0)
 
 
Title: Recrystallization process of phosphorus ion implanted 4H–SiC(112−0)
Author: Satoh, M.
Hitomi, T.
Suzuki, T.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 242 (2006) nr. 1-2 pages 3 p.
Year: 2006
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 158 of 194 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands