| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adaptive accelerated aging for 28nm HKMG technology
|
Patra, Devyani
|
|
2018
|
80 |
C |
p. 149-154
|
artikel
|
| 2 |
An exploration for the degradation behavior of 2-D electrostatic microscanners by accelerated lifetime test
|
Qiao, Dayong
|
|
2018
|
80 |
C |
p. 284-293
|
artikel
|
| 3 |
Applications of fracture mechanics to quantitative accelerated life testing of plastic encapsulated microelectronics
|
Evans, John W.
|
|
2018
|
80 |
C |
p. 317-327
|
artikel
|
| 4 |
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
|
Zhang, J.F.
|
|
2018
|
80 |
C |
p. 109-123
|
artikel
|
| 5 |
Border traps and bias-temperature instabilities in MOS devices
|
Fleetwood, D.M.
|
|
2018
|
80 |
C |
p. 266-277
|
artikel
|
| 6 |
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors
|
Garros, Xavier
|
|
2018
|
80 |
C |
p. 100-108
|
artikel
|
| 7 |
Compact modeling of dynamic trap density evolution for predicting circuit-performance aging
|
Miura-Mattausch, M.
|
|
2018
|
80 |
C |
p. 164-175
|
artikel
|
| 8 |
Constitutive modelling on the whole-life uniaxial ratcheting behavior of sintered nano-scale silver paste at room and high temperatures
|
Chen, Gang
|
|
2018
|
80 |
C |
p. 47-54
|
artikel
|
| 9 |
Degradation mechanisms of AlGaN/GaN HEMTs under 800MeV Bi ions irradiation
|
Lei, Z.F.
|
|
2018
|
80 |
C |
p. 312-316
|
artikel
|
| 10 |
Design for reliability of generic sensor interface circuits
|
Heinssen, Sascha
|
|
2018
|
80 |
C |
p. 184-197
|
artikel
|
| 11 |
Design for Small Delay Test - A Simulation Study
|
Kampmann, Matthias
|
|
2018
|
80 |
C |
p. 124-133
|
artikel
|
| 12 |
Editorial Board
|
|
|
2018
|
80 |
C |
p. ii
|
artikel
|
| 13 |
Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget
|
Hong, Eun-Ki
|
|
2018
|
80 |
C |
p. 306-311
|
artikel
|
| 14 |
Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement
|
Ghorbani, Hamidreza
|
|
2018
|
80 |
C |
p. 230-240
|
artikel
|
| 15 |
Empirical derivation of upper and lower bounds of NBTI aging for embedded cores
|
Chen, Yukai
|
|
2018
|
80 |
C |
p. 294-305
|
artikel
|
| 16 |
Estimating dynamic power consumption for memristor-based CiM architecture
|
Traiola, Marcello
|
|
2018
|
80 |
C |
p. 241-248
|
artikel
|
| 17 |
Experimental analysis of Sn-3.0Ag-0.5Cu solder joint board-level drop/vibration impact failure models after thermal/isothermal cycling
|
Gu, Jian
|
|
2018
|
80 |
C |
p. 29-36
|
artikel
|
| 18 |
Experimental and modeling study on viscosity of encapsulant for electronic packaging
|
Shan, Xiuyang
|
|
2018
|
80 |
C |
p. 42-46
|
artikel
|
| 19 |
Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current
|
Das, Subhas Chandra
|
|
2018
|
80 |
C |
p. 134-143
|
artikel
|
| 20 |
Handling of transient and permanent faults in dynamically scheduled super-scalar processors
|
Mühlbauer, Felix
|
|
2018
|
80 |
C |
p. 176-183
|
artikel
|
| 21 |
Heat and mass transfer effects of laser soldering on growth behavior of interfacial intermetallic compounds in Sn/Cu and Sn-3.5Ag0.5/Cu joints
|
Kunwar, Anil
|
|
2018
|
80 |
C |
p. 55-67
|
artikel
|
| 22 |
High temperature storage reliability of palladium coated copper wire in different EFO current settings
|
Cheng, Pi-Ying
|
|
2018
|
80 |
C |
p. 1-6
|
artikel
|
| 23 |
Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device
|
Liu, Xianqiang
|
|
2018
|
80 |
C |
p. 24-28
|
artikel
|
| 24 |
Microstructure evolution and mechanical strength evaluation in Ag/Sn/Cu TLP bonding interconnection during aging test
|
Guo, Qiang
|
|
2018
|
80 |
C |
p. 144-148
|
artikel
|
| 25 |
Microstructures and properties of Bi10Ag high temperature solder doped with Cu element
|
Yin, Limeng
|
|
2018
|
80 |
C |
p. 79-84
|
artikel
|
| 26 |
Modeling and simulation of the charge trapping component of BTI and RTS
|
Both, Thiago Hanna
|
|
2018
|
80 |
C |
p. 278-283
|
artikel
|
| 27 |
Modulation method for measuring thermal impedance components of semiconductor devices
|
Smirnov, V.I.
|
|
2018
|
80 |
C |
p. 205-212
|
artikel
|
| 28 |
Non-linear thermal simulation at system level: Compact modelling and experimental validation
|
Bernardoni, Mirko
|
|
2018
|
80 |
C |
p. 223-229
|
artikel
|
| 29 |
Positive and negative threshold voltage instabilities in GaN-based transistors
|
Meneghesso, G.
|
|
2018
|
80 |
C |
p. 257-265
|
artikel
|
| 30 |
Refined metastability characterization using a time-to-digital converter
|
Polzer, Thomas
|
|
2018
|
80 |
C |
p. 91-99
|
artikel
|
| 31 |
Reliability and failure analysis of SAC 105 and SAC 1205N lead-free solder alloys during drop test events
|
Wu, Mei-Ling
|
|
2018
|
80 |
C |
p. 213-222
|
artikel
|
| 32 |
Solderless bonding with nanoporous copper as interlayer for high-temperature applications
|
Sun, Siyu
|
|
2018
|
80 |
C |
p. 198-204
|
artikel
|
| 33 |
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs
|
Lim, Chulseung
|
|
2018
|
80 |
C |
p. 85-90
|
artikel
|
| 34 |
Test response compaction method with improved detection and diagnostic abilities
|
Novák, Ondřej
|
|
2018
|
80 |
C |
p. 249-256
|
artikel
|
| 35 |
The dominant effect of c-axis orientation in tin on the electromigration behaviors in tricrystal Sn-3.0Ag-0.5Cu solder joints
|
Tian, Yu
|
|
2018
|
80 |
C |
p. 7-13
|
artikel
|
| 36 |
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
|
Aichinger, Thomas
|
|
2018
|
80 |
C |
p. 68-78
|
artikel
|
| 37 |
Ultra-low-voltage boosted driver for self-powered systems
|
Šovčík, Michal
|
|
2018
|
80 |
C |
p. 155-163
|
artikel
|
| 38 |
VDMOSFET HEF degradation modelling considering turn-around phenomenon
|
Ye, X.R.
|
|
2018
|
80 |
C |
p. 37-41
|
artikel
|
| 39 |
Warpage simulation for the reconstituted wafer used in fan-out wafer level packaging
|
Chiu, Tz-Cheng
|
|
2018
|
80 |
C |
p. 14-23
|
artikel
|
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