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                             78 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advanced time-of-flight secondary ion mass spectrometry analyses for application to TFT-LCD Takatsuji, Hiroshi
 2001
 4 1-3 p. 309-312
 artikel
2 A new high sensitive method for determining weak microinhomogeneities in semiconductors Chaikovsky, I.
 2001
 4 1-3 p. 323-326
 artikel
3 Auto-correlation function analysis of amorphous interlayers in Ti/Si systems Chen, L.J.
 2001
 4 1-3 p. 237-240
 artikel
4 Be- and Mg-ion implantation-induced damage in InSb Declémy, A.
 2001
 4 1-3 p. 277-279
 artikel
5 Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy Giannazzo, F.
 2001
 4 1-3 p. 195-199
 artikel
6 Carrier lifetime investigation in 4H–SiC grown by CVD and sublimation epitaxy Grivickas, P.
 2001
 4 1-3 p. 191-194
 artikel
7 Characterisation of ultraviolet annealed tantalum oxide films deposited by photo-CVD using 172nm excimer lamp Zhang, Jun-Ying
 2001
 4 1-3 p. 313-317
 artikel
8 Characterization and production metrology of gate dielectric films Diebold, Alain C.
 2001
 4 1-3 p. 3-8
 artikel
9 Characterization of BaTiO3 thin films on p-Si Evangelou, E.K.
 2001
 4 1-3 p. 305-307
 artikel
10 Characterization of deep impurities in semiconductors by terahertz tunneling ionization Ganichev, S.D.
 2001
 4 1-3 p. 281-284
 artikel
11 Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy Hens, S.
 2001
 4 1-3 p. 109-111
 artikel
12 Competitive delineation of n- and p-doped Si by selective electrochemical etch D’Arrigo, G.
 2001
 4 1-3 p. 93-95
 artikel
13 Composition analysis of oxidized buried SiC layers in silicon from EFTEM images Attenberger, W.
 2001
 4 1-3 p. 187-190
 artikel
14 Correlation between the microstructure and optical properties of carbon nitride films deposited by rf magnetron sputtering Durand-Drouhin, O.
 2001
 4 1-3 p. 335-338
 artikel
15 Defect analysis of n-type silicon strained layers Simoen, E.
 2001
 4 1-3 p. 225-227
 artikel
16 Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction Popov, V.P.
 2001
 4 1-3 p. 35-37
 artikel
17 Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry Durand, O.
 2001
 4 1-3 p. 327-330
 artikel
18 Dislocations in Si generated by fatigue at room temperature Kato, N.I.
 2001
 4 1-3 p. 113-115
 artikel
19 Dopant redistribution and formation of electrically active complexes in SiGe Kuznetsov, A.Yu.
 2001
 4 1-3 p. 217-223
 artikel
20 Electrical characterization of semiconductor materials and devices using scanning probe microscopy De Wolf, P.
 2001
 4 1-3 p. 71-76
 artikel
21 Electrical defect study in thin-film SiGe/Si solar cells Daami, A.
 2001
 4 1-3 p. 331-334
 artikel
22 Electromigration of Cu and Ti atoms and dopant junction profiles in the p+-Si implanted channel under high-density current Lin, H.H.
 2001
 4 1-3 p. 245-247
 artikel
23 Ellipsometric investigations of (100) GaSb surface under chemical etching and sulfide treatment Papis, E
 2001
 4 1-3 p. 293-295
 artikel
24 Evaluation of different oxidation methods for silicon for scanning capacitance microscopy Bowallius, O.
 2001
 4 1-3 p. 81-84
 artikel
25 Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity Gaubas, E.
 2001
 4 1-3 p. 125-131
 artikel
26 Fast and cheap method to qualitatively measure the thickness and uniformity of ZrO2 thin films Águas, Hugo
 2001
 4 1-3 p. 319-321
 artikel
27 Femtosecond nonlinear optical characterisation of silicon wafers: the role of symmetry Reif, J.
 2001
 4 1-3 p. 241-243
 artikel
28 Formation of ytterbium silicide on (111) and (001)Si by solid-state reactions Chi, K.S.
 2001
 4 1-3 p. 269-272
 artikel
29 Gate oxide integrity dependence on substrate characteristics and SiO2 thickness Bonoli, F.
 2001
 4 1-3 p. 145-148
 artikel
30 High-frequency method to determine SiC crystal conductivity Shturbin, A.V.
 2001
 4 1-3 p. 205-207
 artikel
31 High-resolution scanning capacitance microscopy by angle bevelling Giannazzo, Filippo
 2001
 4 1-3 p. 77-80
 artikel
32 High-temperature spreading-resistance profiling for the characterization of impurity distributions in n-type silicon Voss, S.
 2001
 4 1-3 p. 67-70
 artikel
33 Hydrogen release related to hole injection into SiO2 layers on Si Afanas’ev, V.V.
 2001
 4 1-3 p. 149-151
 artikel
34 Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography Huth, S.
 2001
 4 1-3 p. 39-42
 artikel
35 Improvement of oxide thickness determination on MOS structures using capacitance–voltage measurements at high frequencies Soliman, L.
 2001
 4 1-3 p. 163-166
 artikel
36 Influence of the polysilicon doping on the electrical quality of thin oxides: a confrontation between vertical and horizontal furnaces Franco, G.
 2001
 4 1-3 p. 153-157
 artikel
37 Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide Dkaki, M.
 2001
 4 1-3 p. 201-204
 artikel
38 Investigation of deep levels in semi-insulating GaAs by means of a thermally activated piezoelectric photoacoustic measurements Ikari, T.
 2001
 4 1-3 p. 253-255
 artikel
39 Lifetime measurements on Ge wafers for Ge/GaAs solar cells — chemical surface passivation Blondeel, A.
 2001
 4 1-3 p. 301-303
 artikel
40 Lifetime study in advanced isolation techniques Poyai, A.
 2001
 4 1-3 p. 137-139
 artikel
41 Local characterisation of large area multicrystalline solar cells by non-destructive mapping Boyeaux, J.P.
 2001
 4 1-3 p. 261-263
 artikel
42 Local optical spectroscopy of HPHT synthetic diamonds, as grown at 1500°C Yelisseyev, A.
 2001
 4 1-3 p. 273-276
 artikel
43 Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon Ulyashin, A.G.
 2001
 4 1-3 p. 297-299
 artikel
44 Material and device characterization using a correlation spectrum analyzer Ferrari, G.
 2001
 4 1-3 p. 133-136
 artikel
45 Material characterization need for SiC-based devices Janzén, E.
 2001
 4 1-3 p. 181-186
 artikel
46 Minority carrier lifetime and metallic-impurity mapping in silicon wafers Palais, O.
 2001
 4 1-3 p. 27-29
 artikel
47 Multiple internal reflection spectroscopy: a sensitive non-destructive probe for interfaces and nanometric layers Olivier, M.
 2001
 4 1-3 p. 15-18
 artikel
48 New methods for electrical characterization of unipolar directly bonded Si/Si structures permitting quantitative evaluation of their lateral non-uniformity Stuchinsky, V.A.
 2001
 4 1-3 p. 177-179
 artikel
49 Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon Bazzali, A.
 2001
 4 1-3 p. 23-26
 artikel
50 Non-ideal Schottky barrier model for impedance measurements of materials properties Sikorski, S.
 2001
 4 1-3 p. 171-175
 artikel
51 [No title] Raineri, V.
 2001
 4 1-3 p. 1
 artikel
52 Optical, non-destructive characterization of ultra-shallow junctions Borden, Peter
 2001
 4 1-3 p. 9-14
 artikel
53 Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes Fukuyama, A.
 2001
 4 1-3 p. 265-267
 artikel
54 Probe of the vicinal Si(111) surface by second harmonic phase spectroscopy Schuhmacher, D.
 2001
 4 1-3 p. 51-53
 artikel
55 Process control of Si/SiGe heterostructures by X-ray diffraction Ryan, Tom
 2001
 4 1-3 p. 229-231
 artikel
56 Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors Duval, E.
 2001
 4 1-3 p. 141-143
 artikel
57 Room temperature oxidation of Cu3Ge and Cu3(Si1−x Ge x ) on Si1−xGex Liang, Hsuan-Han
 2001
 4 1-3 p. 233-235
 artikel
58 Scanning capacitance microscopy investigations of SiC structures Bowallius, O.
 2001
 4 1-3 p. 209-211
 artikel
59 SCTS: Tóth, A.L.
 2001
 4 1-3 p. 89-91
 artikel
60 Silicon melt density — problems of Archimedean technique Terashima, Kazutaka
 2001
 4 1-3 p. 249-251
 artikel
61 Silicon p–n junctions biased above breakdown used as monitors of carrier lifetime Sciacca, E.
 2001
 4 1-3 p. 159-161
 artikel
62 Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n+–p samples Ciampolini, L.
 2001
 4 1-3 p. 85-88
 artikel
63 Statistical analysis of shallow p–n junction leakage increase using XTEM results probabilities Czerwinski, A.
 2001
 4 1-3 p. 105-107
 artikel
64 Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction Armigliato, A.
 2001
 4 1-3 p. 97-99
 artikel
65 Structural characterization of ultra-thin (001) silicon films bonded onto (001) silicon wafers: Rousseau, K.
 2001
 4 1-3 p. 101-104
 artikel
66 Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition Iacona, Fabio
 2001
 4 1-3 p. 43-46
 artikel
67 Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact Kamińska, E.
 2001
 4 1-3 p. 289-291
 artikel
68 Surface photovoltage measurements for Cu, Ti and W determination in Si wafers Cali, D.
 2001
 4 1-3 p. 19-22
 artikel
69 The evolution of hydrogen molecule formation in hydrogen-plasma-treated Czochralski silicon Job, R.
 2001
 4 1-3 p. 257-260
 artikel
70 Thermo-photo-voltaic phenomena in an inhomogeneous semiconductor Sikorski, S.
 2001
 4 1-3 p. 285-288
 artikel
71 The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction Lee, Dong-Kun
 2001
 4 1-3 p. 47-49
 artikel
72 The subimplantation model for hydrogenated amorphous carbon films deposited in electron cyclotron resonance plasma Durand-Drouhin, O.
 2001
 4 1-3 p. 213-215
 artikel
73 The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures Stuer, C
 2001
 4 1-3 p. 117-119
 artikel
74 The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures Vernon-Parry, K.D.
 2001
 4 1-3 p. 121-123
 artikel
75 The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si Tokuda, Y.
 2001
 4 1-3 p. 167-169
 artikel
76 Towards sub-10nm carrier profiling with spreading resistance techniques Clarysse, T
 2001
 4 1-3 p. 61-66
 artikel
77 Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: Napolitani, E.
 2001
 4 1-3 p. 55-60
 artikel
78 X-ray reflectivity of silicon on insulator wafers Eymery, J.
 2001
 4 1-3 p. 31-33
 artikel
                             78 gevonden resultaten
 
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