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                             92 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction Häublein, Volker
 2005
 237 1-2 p. 346-350
5 p.
 artikel
2 Advanced 65nm CMOS devices fabricated using ultra-low energy plasma doping Walther, S.
 2005
 237 1-2 p. 126-130
5 p.
 artikel
3 Alternative USJ formation and characterization methods for 45nm node technology Borland, John O.
 2005
 237 1-2 p. 6-11
6 p.
 artikel
4 Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide Li, W.S.
 2005
 237 1-2 p. 356-360
5 p.
 artikel
5 An ECR ion source directly excited in a selected microwave mode cavity resonator for material processing Asaji, Toyohisa
 2005
 237 1-2 p. 262-266
5 p.
 artikel
6 Angled implants for controlling gate–source/drain extension: A TCAD modeling study Thirupapuliyur, Sunderraj
 2005
 237 1-2 p. 98-101
4 p.
 artikel
7 Application of ultra-high energy boron implantation for superjunction power (CoolMOS™) devices Borany, J. von
 2005
 237 1-2 p. 62-67
6 p.
 artikel
8 Approaches to single wafer high current ion implantation Renau, A.
 2005
 237 1-2 p. 284-289
6 p.
 artikel
9 Carrier illumination measurement of dopant lateral diffusion Budiarto, E.
 2005
 237 1-2 p. 324-329
6 p.
 artikel
10 Characterization and reduction of a new particle defect mode in sub-0.25μm semiconductor process flows Pipes, Leonard
 2005
 237 1-2 p. 330-335
6 p.
 artikel
11 Characterization of BF 2 + implanted monitor for rapid thermal processor temperature calibration Drobny, Vladimir F.
 2005
 237 1-2 p. 438-442
5 p.
 artikel
12 Characterization of copper metallization for interconnect by 90°-bend electromagnetic filtered vacuum arc Chen, Uei-Shin
 2005
 237 1-2 p. 477-483
7 p.
 artikel
13 Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation Shieh, M.S.
 2005
 237 1-2 p. 223-227
5 p.
 artikel
14 Characterization of Pt oxide thin film fabricated by plasma immersion ion implantation Chen, Yi-Chan
 2005
 237 1-2 p. 296-300
5 p.
 artikel
15 Committees and Sponsors 2005
 237 1-2 p. ix-x
nvt p.
 artikel
16 Comparison of elemental boron and boron halide implants into silicon Sharp, J.A.
 2005
 237 1-2 p. 93-97
5 p.
 artikel
17 Contents 2005
 237 1-2 p. xi-xv
nvt p.
 artikel
18 Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectric Yang, F.M.
 2005
 237 1-2 p. 301-306
6 p.
 artikel
19 Decaborane implantation with the medium current implanter Hamamoto, Nariaki
 2005
 237 1-2 p. 443-448
6 p.
 artikel
20 Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescence Mei, Y.F.
 2005
 237 1-2 p. 307-311
5 p.
 artikel
21 Development of 1mA cluster ion beam source Seki, T.
 2005
 237 1-2 p. 455-458
4 p.
 artikel
22 Development of polyatomic ion beam system using liquid organic materials Takaoka, G.H.
 2005
 237 1-2 p. 240-244
5 p.
 artikel
23 Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbon Gennaro, S.
 2005
 237 1-2 p. 88-92
5 p.
 artikel
24 Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing Yu, C.H.
 2005
 237 1-2 p. 167-173
7 p.
 artikel
25 Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering Abo, S.
 2005
 237 1-2 p. 72-76
5 p.
 artikel
26 Dual gate oxide integrity improvement by implementing nitrogen implantation technology Luoh, Tuung
 2005
 237 1-2 p. 183-187
5 p.
 artikel
27 ECR multi-charged ion source directly excited in a circular TE01 mode cavity resonator Kato, Yushi
 2005
 237 1-2 p. 256-261
6 p.
 artikel
28 Editorial Chen, Lih J.
 2005
 237 1-2 p. vii-viii
nvt p.
 artikel
29 Editorial board 2005
 237 1-2 p. CO2-
1 p.
 artikel
30 Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si He, J.H.
 2005
 237 1-2 p. 384-389
6 p.
 artikel
31 Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI Hamilton, J.J.
 2005
 237 1-2 p. 107-112
6 p.
 artikel
32 Electrical activation of ultra-shallow B and BF2 implanted silicon by flash anneal Yoo, Woo Sik
 2005
 237 1-2 p. 12-17
6 p.
 artikel
33 Electrical characteristics due to differences in crystal damage induced by various implant conditions Fuse, G.
 2005
 237 1-2 p. 77-82
6 p.
 artikel
34 Enhanced thermal and morphological stability of Ni(Si1−x Ge x ) growth on BF 2 + -preamorphized Si0.8Ge0.2 substrate He, J.H.
 2005
 237 1-2 p. 174-178
5 p.
 artikel
35 Enhancement of c-axis texture of AlN films by substrate implantation Chen, C.H.
 2005
 237 1-2 p. 290-295
6 p.
 artikel
36 Flat panel display – Impurity doping technology for flat panel displays Suzuki, Toshiharu
 2005
 237 1-2 p. 395-401
7 p.
 artikel
37 Formation of almost delta-layered nanoparticles in SiO2 thin film on Si substrate by metal negative-ion implantation Ishikawa, Junzo
 2005
 237 1-2 p. 422-427
6 p.
 artikel
38 Formation of β-FeSi2 by implanting multicharged iron ions produced in an ECR ion source Tomida, Masashi
 2005
 237 1-2 p. 83-87
5 p.
 artikel
39 Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing Liao, K.F.
 2005
 237 1-2 p. 217-222
6 p.
 artikel
40 Fundamental characteristics of liquid cluster ion source for surface modification Takaoka, G.H.
 2005
 237 1-2 p. 402-405
4 p.
 artikel
41 Gas cluster ion beams for wafer processing Mack, M.E.
 2005
 237 1-2 p. 235-239
5 p.
 artikel
42 High-dose V+ implantation in ZnO thin film structures Vyatkin, A.F.
 2005
 237 1-2 p. 179-182
4 p.
 artikel
43 Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation Tsuji, Hiroshi
 2005
 237 1-2 p. 459-464
6 p.
 artikel
44 Implantation and annealing of aluminum in 4H silicon carbide Rambach, M.
 2005
 237 1-2 p. 68-71
4 p.
 artikel
45 Implantation induced electrical isolation of sulphur doped GaN x As1−x layers Ahmed, S.
 2005
 237 1-2 p. 102-106
5 p.
 artikel
46 Implant process control: Going beyond particles and RS Sing, D.C.
 2005
 237 1-2 p. 318-323
6 p.
 artikel
47 Improvements of anti-corrosion and mechanical properties of NiTi orthopedic materials by acetylene, nitrogen and oxygen plasma immersion ion implantation Poon, Ray W.Y.
 2005
 237 1-2 p. 411-416
6 p.
 artikel
48 Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation Herden, Marc
 2005
 237 1-2 p. 203-207
5 p.
 artikel
49 In-line implant and RTP process monitoring using the carrier illumination technique Li, W.S.
 2005
 237 1-2 p. 361-364
4 p.
 artikel
50 In situ beam angle measurement in a multi-wafer high current ion implanter Freer, B.S.
 2005
 237 1-2 p. 378-383
6 p.
 artikel
51 Investigation of silicon-on-insulator (SOI) substrate preparation using the smart-cutTM process Chao, D.S.
 2005
 237 1-2 p. 197-202
6 p.
 artikel
52 Investigation on boron transient enhanced diffusion induced by the advanced P+/N ultra-shallow junction fabrication processes Lallement, F.
 2005
 237 1-2 p. 113-120
8 p.
 artikel
53 Investigations into the wear of a WL10 ion source Häublein, Volker
 2005
 237 1-2 p. 341-345
5 p.
 artikel
54 Ion implantation in advanced planar and vertical devices Gossmann, Hans-Joachim L.
 2005
 237 1-2 p. 1-5
5 p.
 artikel
55 Ion implantation of boron into silicon by use of the boron cathodic-arc plasma generator: First results Williams, J.M.
 2005
 237 1-2 p. 278-283
6 p.
 artikel
56 Langmuir probe analysis of a BF3 discharge in a high current ion source Mefo, J.
 2005
 237 1-2 p. 245-249
5 p.
 artikel
57 Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants Graoui, H.
 2005
 237 1-2 p. 336-340
5 p.
 artikel
58 Manufacturability of fully ion implanted planer-doped-barrier diodes in GaAs Gwilliam, R.
 2005
 237 1-2 p. 208-212
5 p.
 artikel
59 Mass and energy analysis of the ions in a plasma flood system Wooding, A.C.
 2005
 237 1-2 p. 273-277
5 p.
 artikel
60 Mass resolution: The effects of resolving aperture and beam width on beam current and energetic contamination Freer, B.S.
 2005
 237 1-2 p. 372-377
6 p.
 artikel
61 Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing Matsuno, Akira
 2005
 237 1-2 p. 136-141
6 p.
 artikel
62 Morphological evolution of surfaces irradiated by gas cluster ion beams during thin film deposition Inoue, S.
 2005
 237 1-2 p. 449-454
6 p.
 artikel
63 Morphology modifications of quantum dots on Si(001) surface by ion sputtering Chen, H.C.
 2005
 237 1-2 p. 465-469
5 p.
 artikel
64 Nanostructure and adhesion of electroless-plated Cu film on the self-catalyzed Cu using metal-plasma ion implanter Chen, Uei-Shin
 2005
 237 1-2 p. 470-476
7 p.
 artikel
65 New developments in the applications of proton beam writing Mistry, P.
 2005
 237 1-2 p. 188-192
5 p.
 artikel
66 New method of Plasma doping with in-situ Helium pre-amorphization Sasaki, Y.
 2005
 237 1-2 p. 41-45
5 p.
 artikel
67 Nickel silicide formation on shallow junctions Jiang, Yu-Long
 2005
 237 1-2 p. 160-166
7 p.
 artikel
68 90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants Felch, S.B.
 2005
 237 1-2 p. 53-57
5 p.
 artikel
69 Nondestructive evaluation of as-implanted and annealed ultra shallow junctions by photothermal and photoluminescence heterodyne techniques Geiler, H.D.
 2005
 237 1-2 p. 30-34
5 p.
 artikel
70 Off-resonance microwave ion source for high-current molecular ion-beams Sakudo, N.
 2005
 237 1-2 p. 428-432
5 p.
 artikel
71 Optimization of advanced PMOS junctions using Ge, B and F co-implants Graoui, H.
 2005
 237 1-2 p. 46-52
7 p.
 artikel
72 Optimization of pre-amorphization and dopant implant conditions for advanced annealing Felch, S.B.
 2005
 237 1-2 p. 35-40
6 p.
 artikel
73 Poly-Si gate engineering for advanced CMOS transistors by germanium implantation Bourdon, H.
 2005
 237 1-2 p. 148-154
7 p.
 artikel
74 Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation Liang, J.H.
 2005
 237 1-2 p. 312-317
6 p.
 artikel
75 Production of multicharged iron and nitrogen ions and application to enhance photo-catalytic performance in visible light region on TiO2 thin films Kato, Yushi
 2005
 237 1-2 p. 267-272
6 p.
 artikel
76 Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantation Vanderpool, Aaron
 2005
 237 1-2 p. 142-147
6 p.
 artikel
77 Silicon field emission array as novel charge neutralization device for high current ion implanter Ishikawa, J.
 2005
 237 1-2 p. 390-394
5 p.
 artikel
78 Silver negative-ion implantation to sol–gel TiO2 film for improving photocatalytic property under fluorescent light Tsuji, Hiroshi
 2005
 237 1-2 p. 433-437
5 p.
 artikel
79 Surface modification of polymeric materials by plasma immersion ion implantation Fu, Ricky K.Y.
 2005
 237 1-2 p. 417-421
5 p.
 artikel
80 The effects of energy non-monochromaticity of 11B ion beams on 11B diffusion Chen, John
 2005
 237 1-2 p. 155-159
5 p.
 artikel
81 The influence of the ion implantation temperature and the flux on smart-cut© in GaAs Webb, M.
 2005
 237 1-2 p. 193-196
4 p.
 artikel
82 Thermal stability enhancement of silicides by using N2 and Ar implantation Luoh, Tuung
 2005
 237 1-2 p. 213-216
4 p.
 artikel
83 Transient enhanced diffusion and deactivation of ion-implanted As in strained Si Dilliway, G.D.M.
 2005
 237 1-2 p. 131-135
5 p.
 artikel
84 Transistor challenges – A DRAM perspective Faul, Juergen W.
 2005
 237 1-2 p. 228-234
7 p.
 artikel
85 Tuning for optimal performance in angle control, uniformity, and energy purity Liebert, Reuel B.
 2005
 237 1-2 p. 365-371
7 p.
 artikel
86 Ultra-high resolution mass spectroscopy of boron cluster ions Jacobson, Dale
 2005
 237 1-2 p. 406-410
5 p.
 artikel
87 Ultra shallow junction formation and dopant activation study of Ga implanted Si Gwilliam, R.
 2005
 237 1-2 p. 121-125
5 p.
 artikel
88 Ultra-shallow junction formation by B18H22 ion implantation Kawasaki, Y.
 2005
 237 1-2 p. 25-29
5 p.
 artikel
89 Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe Benjamin, M.C.
 2005
 237 1-2 p. 351-355
5 p.
 artikel
90 Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation Jin, C.G.
 2005
 237 1-2 p. 58-61
4 p.
 artikel
91 Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1μm CMOS devices Torregrosa, Frank
 2005
 237 1-2 p. 18-24
7 p.
 artikel
92 Very high uniformity mass analysed large area ion implantation Aitken, Derek
 2005
 237 1-2 p. 250-255
6 p.
 artikel
                             92 gevonden resultaten
 
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