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Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation |
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Titel: |
Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation |
Auteur: |
Jin, C.G. Sasaki, Y. Okashita, K. Tamura, H. Ito, H. Mizuno, B. Tsutsui, K. Ohmi, S. Iwai, H. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 237 (2005) nr. 1-2 pagina's 4 p. |
Jaar: |
2005 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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