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Details for article 25 of 92 found articles
| Title: |
Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering |
| Author: |
Abo, S. Ichihara, S. Lohner, T. Wakaya, F. Eimori, T. Inoue, Y. Takai, M. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 237 (2005) nr. 1-2 pages 5 p. |
| Year: |
2005 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 25 of 92 found articles
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