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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI |
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Title: |
Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI |
Author: |
Hamilton, J.J. Collart, E.J.H. Colombeau, B. Jeynes, C. Bersani, M. Giubertoni, D. Sharp, J.A. Cowern, N.E.B. Kirkby, K.J. |
Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paging: |
Volume 237 (2005) nr. 1-2 pages 6 p. |
Year: |
2005 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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