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nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Abnormal distribution of defects introduced into MgO single crystals by MeV ion implantation Ogiso, Hisato
 2003
 206 C p. 157-161
5 p.
 artikel
2 Accumulation of ion beam induced disorder in strontium titanate Thevuthasan, S.
 2003
 206 C p. 162-165
4 p.
 artikel
3 Adatom, vacancy and sputtering yields of low energy Pt atoms impacts on Pt(111) by molecular dynamics simulation Lu, H.F.
 2003
 206 C p. 22-26
5 p.
 artikel
4 Aluminum plasma immersion ion implantation in polymers Ueda, M.
 2003
 206 C p. 760-766
7 p.
 artikel
5 Amorphous pocket model for silicon based on molecular dynamics simulations Hobler, G.
 2003
 206 C p. 81-84
4 p.
 artikel
6 Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide Ishimaru, Manabu
 2003
 206 C p. 994-998
5 p.
 artikel
7 An effect of annealing on In implanted ZnO Sakaguchi, I.
 2003
 206 C p. 153-156
4 p.
 artikel
8 A new pixel sensor for uniformity control in ion implantation Marchal, J.
 2003
 206 C p. 462-466
5 p.
 artikel
9 An influence of the viscosity of polymer substrate on ion beam synthesis of iron granular films Khaibullin, R.I.
 2003
 206 C p. 1115-1119
5 p.
 artikel
10 Annealing behavior and lattice site location of Er implanted InGaN Alves, E.
 2003
 206 C p. 1042-1046
5 p.
 artikel
11 Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature Ahmed, S.
 2003
 206 C p. 1008-1012
5 p.
 artikel
12 Application of ion beams for preparation of TiO2 thin film photocatalysts operatable under visible light irradiation: Ion-assisted deposition and metal ion-implantation Yamashita, H.
 2003
 206 C p. 889-892
4 p.
 artikel
13 Application of nuclear reaction geometry for 3He depth profiling in nuclear ceramics Trocellier, Patrick
 2003
 206 C p. 1077-1082
6 p.
 artikel
14 Application of time-domain vibrational spectroscopy to the study of defects in ion-implanted materials Kitajima, M.
 2003
 206 C p. 99-102
4 p.
 artikel
15 Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon–nitrogen films on aluminum for protection against aqueous corrosion Ensinger, W.
 2003
 206 C p. 334-338
5 p.
 artikel
16 Atomic fingers, bridges and slingshots: formation of exotic surface structures during ion irradiation of heavy metals Nordlund, K.
 2003
 206 C p. 189-193
5 p.
 artikel
17 Atomistic study of cluster collision on solid surfaces Matsuo, Jiro
 2003
 206 C p. 838-841
4 p.
 artikel
18 A two-switch mode pulse modulator for plasma-based ion implantation and deposition Yukimura, Ken
 2003
 206 C p. 791-793
3 p.
 artikel
19 Author index 2003
 206 C p. 1128-1143
16 p.
 artikel
20 Biocompatibility of titanium based implants treated with plasma immersion ion implantation Mändl, S.
 2003
 206 C p. 517-521
5 p.
 artikel
21 Boron-induced redistribution of hydrogen implanted at elevated temperature into crystalline silicon Verda, R.D.
 2003
 206 C p. 927-931
5 p.
 artikel
22 Burrowing of cobalt nanoclusters in copper Frantz, J.
 2003
 206 C p. 66-70
5 p.
 artikel
23 Characteristics of shunting arc discharge for carbon ion source Takaki, K.
 2003
 206 C p. 794-797
4 p.
 artikel
24 Characterization and light emission properties of β-FeSi2 precipitates in Si synthesized by metal vapor vacuum arc ion implantation Gao, Y.
 2003
 206 C p. 317-320
4 p.
 artikel
25 Characterization of air-exposed surface of β-FeSi2 fabricated by ion beam sputter deposition method Saito, T.
 2003
 206 C p. 321-325
5 p.
 artikel
26 Characterization of BSi molecular ion implantation Liang, J.H.
 2003
 206 C p. 932-936
5 p.
 artikel
27 Characterization of metal-doped TiO2 films by RBS/channeling Yamamoto, S.
 2003
 206 C p. 268-271
4 p.
 artikel
28 Chemical effects of heavy ion beams on organic materials Koizumi, Hitoshi
 2003
 206 C p. 1124-1127
4 p.
 artikel
29 Chromosomal rearrangements in interspecific hybrids between Nicotiana gossei Domin and N. tabacum L., obtained by crossing with pollen exposed to helium ion beams or gamma-rays Kitamura, S.
 2003
 206 C p. 548-552
5 p.
 artikel
30 Cleaning of diffusion bonding surface by argon ion bombardment treatment Wang, Airu
 2003
 206 C p. 219-223
5 p.
 artikel
31 Cluster ion beam process technology Yamada, Isao
 2003
 206 C p. 820-829
10 p.
 artikel
32 Cluster species and cluster size dependence of damage formation by cluster ion impact Aoki, Takaaki
 2003
 206 C p. 861-865
5 p.
 artikel
33 Coating of TiO2 photocatalysts on super-hydrophobic porous teflon membrane by an ion assisted deposition method and their self-cleaning performance Yamashita, H.
 2003
 206 C p. 898-901
4 p.
 artikel
34 Coloration of natural beryl by iron ion implantation Khaibullin, R.I.
 2003
 206 C p. 277-281
5 p.
 artikel
35 Comparative study of target atomic number dependence of ion induced and electron induced secondary electron emission Ohya, K.
 2003
 206 C p. 52-56
5 p.
 artikel
36 Comparison among the formation processes of extended defects in Si under irradiation with low-energy H+, He+ ions and high-energy electrons Arakawa, K.
 2003
 206 C p. 76-80
5 p.
 artikel
37 Comparison of methods to measure the rate of neutral free radical production by photo-deionization of negative ion beams Hayashi, Keiji
 2003
 206 C p. 403-408
6 p.
 artikel
38 Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition Matsutani, T.
 2003
 206 C p. 343-347
5 p.
 artikel
39 Computer simulation of plasma for plasma immersed ion implantation and deposition with bipolar pulses Miyagawa, Y.
 2003
 206 C p. 767-771
5 p.
 artikel
40 Contents 2003
 206 C p. xiv-xxiii
nvt p.
 artikel
41 Crater formation and sputtering by cluster impacts Insepov, Z.
 2003
 206 C p. 846-850
5 p.
 artikel
42 Cratering by MeV–GeV ions as a function of angle of incidence Papaléo, R.M.
 2003
 206 C p. 7-12
6 p.
 artikel
43 Creation and annealing of defect structures in silicon-based semiconductors during and after implantations at 77–500 K Weyer, G.
 2003
 206 C p. 90-94
5 p.
 artikel
44 Creation of hydrogen gas emitting function in proton conducting oxide ceramics by hydrogen implantation Morita, K.
 2003
 206 C p. 228-232
5 p.
 artikel
45 Creation of internal point defect drains in silicon by carbon implantation Häberlen, M.
 2003
 206 C p. 916-921
6 p.
 artikel
46 Creation of noble metal nanoclusters in bismuth tellurite Kling, A.
 2003
 206 C p. 653-656
4 p.
 artikel
47 Crystallographic analysis of the amorphization caused by ion irradiation: Self-irradiation Nakagawa, S.T.
 2003
 206 C p. 13-17
5 p.
 artikel
48 Defect characteristics by boron cluster ion implantation Aoki, Takaaki
 2003
 206 C p. 855-860
6 p.
 artikel
49 Dependence of optical properties and hardness on carbon content in silicon carbonitride films deposited by plasma ion immersion processing technique Afanasyev-Charkin, I.V.
 2003
 206 C p. 736-740
5 p.
 artikel
50 Deposition of diamond-like carbon films by plasma source ion implantation with superposed pulse Baba, K.
 2003
 206 C p. 708-711
4 p.
 artikel
51 Deposition of diamond-like carbon films on inner wall of sub-millimeter diameter steel tube by plasma source ion implantation Baba, K.
 2003
 206 C p. 704-707
4 p.
 artikel
52 Detection of DNA damage induced by heavy ion irradiation in the individual cells with comet assay Wada, S.
 2003
 206 C p. 553-556
4 p.
 artikel
53 Determination of sp3/sp2 ratio in amorphous-carbon thin film synthesized by reactive filtered arc deposition Li, W.J.
 2003
 206 C p. 339-342
4 p.
 artikel
54 Direct observation of structural relaxation in amorphous compound semiconductors Azevedo, G.de M.
 2003
 206 C p. 1024-1027
4 p.
 artikel
55 Dislocation engineered β-FeSi2 light emitting diodes Lourenço, M.A.
 2003
 206 C p. 436-439
4 p.
 artikel
56 Disordering in Li2TiO3 irradiated with high energy ions Nakazawa, T.
 2003
 206 C p. 166-170
5 p.
 artikel
57 Displacement damage degradation of ion-induced charge in Si pin photodiode Onoda, Shinobu
 2003
 206 C p. 444-447
4 p.
 artikel
58 Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation Poirier, R.
 2003
 206 C p. 85-89
5 p.
 artikel
59 Dose dependence of the production yield of endohedral 133Xe-fullerene by ion implantation Watanabe, S.
 2003
 206 C p. 399-402
4 p.
 artikel
60 Dose response and mutation induction by ion beam irradiation in buckwheat Morishita, T.
 2003
 206 C p. 565-569
5 p.
 artikel
61 Editorial board 2003
 206 C p. IFC-
1 p.
 artikel
62 Effect of aspect ratio on phase changes of rare-gas precipitates in an Al matrix Mitsuishi, K.
 2003
 206 C p. 109-113
5 p.
 artikel
63 Effect of external bias potential on secondary charged emissions from polycarbonate by C1 + and C8 + bombardments Hirata, K.
 2003
 206 C p. 47-51
5 p.
 artikel
64 Effect of high-dose low-energy reactive-ion implantation on cold cathode properties Djurabekova, F.G.
 2003
 206 C p. 194-197
4 p.
 artikel
65 Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs Ahmed, S.
 2003
 206 C p. 1003-1007
5 p.
 artikel
66 Effect of surface treatment of Si substrate on the crystal structure of FeSi2 thin film formed by ion beam sputter deposition method Haraguchi, M.
 2003
 206 C p. 313-316
4 p.
 artikel
67 Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate Singh, Nandlal
 2003
 206 C p. 1120-1123
4 p.
 artikel
68 Effects of implantation conditions on the luminescence properties of Eu-doped GaN Nakanishi, Y.
 2003
 206 C p. 1033-1036
4 p.
 artikel
69 Effects of ion beam assist on the formation of calcium phosphate film Lee, I.-S.
 2003
 206 C p. 522-526
5 p.
 artikel
70 Effects of ion implantation on various properties of amorphous carbon nitride (a-C:N) thin films Kakiuchi, H.
 2003
 206 C p. 237-240
4 p.
 artikel
71 Effects of ion irradiation on structural and magnetic properties of Fe/Si multilayers prepared by helicon plasma sputtering Purwanto, Setyo
 2003
 206 C p. 326-329
4 p.
 artikel
72 Effects of pressure on the structure of titanium nitride film in the preparation using metallic plasma-based ion implantation and deposition Yukimura, Ken
 2003
 206 C p. 745-748
4 p.
 artikel
73 Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H–SiC Abe, K.
 2003
 206 C p. 960-964
5 p.
 artikel
74 Electrical properties of the regrown implantation-induced amorphous layer on (1 1 ̄ 00)- and (11 2 ̄ 0)-oriented 6H-SiC Nakamura, Tomonori
 2003
 206 C p. 956-959
4 p.
 artikel
75 Electrochemical porosity determination of thin protective films on iron base materials Lee, Y.-Y.
 2003
 206 C p. 754-759
6 p.
 artikel
76 Electron and γ-irradiation of ion implanted MOS structures with different oxide thickness Kaschieva, S.
 2003
 206 C p. 452-456
5 p.
 artikel
77 Electron microscopy and optical spectroscopy study of xenon-implanted yttria-stabilized zirconia Zhu, S.
 2003
 206 C p. 1092-1096
5 p.
 artikel
78 Enhanced solid-phase growth of β-FeSi2 by pre-amorphization Murakami, Y.
 2003
 206 C p. 304-307
4 p.
 artikel
79 Enhancement of metal-nanoparticle precipitation by co-irradiation of high-energy heavy ions and laser in silica glass Okubo, N.
 2003
 206 C p. 610-614
5 p.
 artikel
80 ESR characterization of activation of implanted phosphorus ions in silicon carbide Isoya, J.
 2003
 206 C p. 965-968
4 p.
 artikel
81 Etching characteristics of SiO2 irradiated with focused ion beam Sadoh, T.
 2003
 206 C p. 478-481
4 p.
 artikel
82 Fabrication and stability of binary clusters by reactive molecular ion irradiation Yamamoto, Hiroyuki
 2003
 206 C p. 42-46
5 p.
 artikel
83 Fabrication of optical waveguides by 2 MeV Ar+ irradiation of germanium-doped flame-hydrolysis deposited silica Garcı́a-Blanco, S.
 2003
 206 C p. 440-443
4 p.
 artikel
84 Fluorine-doping in titanium dioxide by ion implantation technique Yamaki, T.
 2003
 206 C p. 254-258
5 p.
 artikel
85 Formation and characterizations of ultra-shallow p+–n junctions using B10H14 ion implantation Jeon, G.Y.
 2003
 206 C p. 409-412
4 p.
 artikel
86 Formation of a super-thin film and a self-assembly cellular sheet by ion-beam irradiation Yotoriyama, T.
 2003
 206 C p. 527-531
5 p.
 artikel
87 Formation of buried oxide layers in titanium by high-fluence oxygen ion implantation Hammerl, C.
 2003
 206 C p. 1072-1076
5 p.
 artikel
88 Formation of carbon needles from fluoropolymer by ion irradiation followed by defluorination Kobayashi, T.
 2003
 206 C p. 184-188
5 p.
 artikel
89 Formation of CuCl and AgCl nanoclusters by sequential implantation Takahiro, Katsumi
 2003
 206 C p. 639-643
5 p.
 artikel
90 Formation of β-FeSi2 thin films by partially ionized vapor deposition Harada, Noriyuki
 2003
 206 C p. 308-312
5 p.
 artikel
91 Formation of micrometer sized crater shaped pits in silicon by low-energy 22Ne+ implantation and electron beam annealing Markwitz, A.
 2003
 206 C p. 179-183
5 p.
 artikel
92 Formation of SiGe alloys using ion beam mixing followed by ion beam induced epitaxial crystallization Kitahara, N.
 2003
 206 C p. 999-1002
4 p.
 artikel
93 Formation of silver nanoparticles in thin oxide layer on Si by negative-ion implantation Arai, N.
 2003
 206 C p. 629-633
5 p.
 artikel
94 Fractal, wavelet and Fourier analysis for investigation of nanoscale CoSi2 structures in Si produced by ion synthesis Gerasimenko, N.N.
 2003
 206 C p. 299-303
5 p.
 artikel
95 Friction properties of ion implanted Al2O3 ceramic Jagielski, J.
 2003
 206 C p. 1097-1100
4 p.
 artikel
96 Fundamental nature of ion–solid interactions in SiC Weber, W.J.
 2003
 206 C p. 1-6
6 p.
 artikel
97 Gas cluster ion beam applications and equipment Kirkpatrick, Allen
 2003
 206 C p. 830-837
8 p.
 artikel
98 Generation of the large current cluster ion beam Seki, T.
 2003
 206 C p. 902-906
5 p.
 artikel
99 Gold nanoparticles sputtered by single ions and clusters Birtcher, R.C.
 2003
 206 C p. 851-854
4 p.
 artikel
100 Growth and nucleation of diamond-like carbon (DLC) film on aluminum Li, L.H.
 2003
 206 C p. 691-695
5 p.
 artikel
101 Growth of three-dimensional nano-structures using FIB-CVD and its mechanical properties Fujita, J.
 2003
 206 C p. 472-477
6 p.
 artikel
102 Haemocompatibility of hydrogenated amorphous carbon (a-C:H) films synthesized by plasma immersion ion implantation-deposition Yang, P.
 2003
 206 C p. 721-725
5 p.
 artikel
103 Heat spike effect on the straggling of cluster implants Peltola, J.
 2003
 206 C p. 61-65
5 p.
 artikel
104 Hydrogen contents and related properties of a-C:H formed with unbalanced magnetron sputtering Xu, G.C.
 2003
 206 C p. 330-333
4 p.
 artikel
105 Immobilization of collagen by ion bombardment Yokoyama, Y.
 2003
 206 C p. 512-516
5 p.
 artikel
106 Impact of energy density and stress fields on the nucleation dynamics of plasma deposited a-C:H films Golanski, A.
 2003
 206 C p. 731-735
5 p.
 artikel
107 Improvement of hydrogen absorption rate of Pd by ion irradiation Abe, H.
 2003
 206 C p. 224-227
4 p.
 artikel
108 Improvement of photocatalytic efficiency of rutile titania by silver negative-ion implantation Tsuji, Hiroshi
 2003
 206 C p. 249-253
5 p.
 artikel
109 Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation Tsuji, H.
 2003
 206 C p. 507-511
5 p.
 artikel
110 Improvement of the adhesion of cubic boron nitride films by adding miscellaneous elements Kurooka, S.
 2003
 206 C p. 1088-1091
4 p.
 artikel
111 Increasing the fracture toughness of silicon by ion implantation Swadener, J.G.
 2003
 206 C p. 937-940
4 p.
 artikel
112 Induction of somatic instability in stable yellow leaf mutant of rice by ion beam irradiation Maekawa, M.
 2003
 206 C p. 579-585
7 p.
 artikel
113 Influence of carbon-ion irradiation and hydrogen-plasma treatment on photocatalytic properties of titanium dioxide films Choi, Y.
 2003
 206 C p. 241-244
4 p.
 artikel
114 Influence of magnetic field on magnetized hydrogen plasmas in plasma immersion ion implantation Tang, D.L.
 2003
 206 C p. 808-812
5 p.
 artikel
115 Influence of residual Ar+ in Ar cluster ion beam for DLC film formation Kitagawa, Teruyuki
 2003
 206 C p. 884-888
5 p.
 artikel
116 Influence of the implantation angle on the generation of defects for Er implanted GaN Pipeleers, B.
 2003
 206 C p. 95-98
4 p.
 artikel
117 In-line nitrogen PIII/ion nitriding processing of metallic materials Ueda, M.
 2003
 206 C p. 749-753
5 p.
 artikel
118 In situ observation of formation processes of titanium compound thin films due to ion implantation in a transmission electron microscope Kasukabe, Y.
 2003
 206 C p. 390-394
5 p.
 artikel
119 In situ observation of Raman scattering from Ag- and W-ions implanted polyimide films during laser irradiation Watanabe, H.
 2003
 206 C p. 1106-1109
4 p.
 artikel
120 Intermittent rapid motion of helium bubbles in Cu during irradiation with high energy self-ions Ono, K.
 2003
 206 C p. 114-117
4 p.
 artikel
121 Interplay of surface adsorption and preferential sputtering in metal plasma immersion ion implantation and deposition Mändl, S.
 2003
 206 C p. 663-667
5 p.
 artikel
122 Intravascular brachytherapy with radioactive stents produced by ion implantation Golombeck, M.-A.
 2003
 206 C p. 495-500
6 p.
 artikel
123 Investigation of diamond-like carbon formed on PET film by plasma-source ion implantation using C2H2 and CH4 Yoshida, M.
 2003
 206 C p. 712-716
5 p.
 artikel
124 Ion beam alignment for liquid crystal display fabrication Doyle, J.P.
 2003
 206 C p. 467-471
5 p.
 artikel
125 Ion beam assisted deposition of multi-layer X-ray mirrors for the extreme ultraviolet lithography Chassé, T.
 2003
 206 C p. 377-381
5 p.
 artikel
126 Ion-beam-induced amorphous structures in silicon carbide Bae, In-Tae
 2003
 206 C p. 974-978
5 p.
 artikel
127 Ion-beam induced defect formation in α-alumina with applied electric field Higuchi, T.
 2003
 206 C p. 103-108
6 p.
 artikel
128 Ion beam induced epitaxial crystallization of silicon implanted with heavy ions Angelov, Ch.
 2003
 206 C p. 907-911
5 p.
 artikel
129 Ion-beam-irradiation induced defects in gallium nitride Jiang, W.
 2003
 206 C p. 1037-1041
5 p.
 artikel
130 Ion beam modification of photo-induced charge separation in TiO2 films Sumita, T.
 2003
 206 C p. 245-248
4 p.
 artikel
131 Ion beam modification of polymers for the application of medical devices Suzuki, Y.
 2003
 206 C p. 501-506
6 p.
 artikel
132 Ion beam modification of ZnO thin films on MgO Matsunami, N.
 2003
 206 C p. 282-286
5 p.
 artikel
133 Ion current extracted from a self ignition plasma around the target immersed in a pulsed rf ICP methane plasma Tanaka, Takeshi
 2003
 206 C p. 817-819
3 p.
 artikel
134 Ion current on the inner surface of a pipe by plasma-based ion implantation and deposition Ma, X.X.
 2003
 206 C p. 813-816
4 p.
 artikel
135 Ion implantation into ePTFE for application of a dural substitute Suzuki, Y.
 2003
 206 C p. 538-542
5 p.
 artikel
136 Ion implantation to inner surface of a cylinder Masamune, S.
 2003
 206 C p. 682-686
5 p.
 artikel
137 Ion-induced frequency shift of ∼1100 cm−1 IR vibration in implanted SiO2: Compaction versus bond-breaking Amekura, H.
 2003
 206 C p. 1101-1105
5 p.
 artikel
138 Ion-induced metal nanoparticles in insulators for nonlinear optical property Kishimoto, N.
 2003
 206 C p. 634-638
5 p.
 artikel
139 Ionisation stimulated defect annealing in GaAs and InP Wesch, W.
 2003
 206 C p. 1018-1023
6 p.
 artikel
140 Ion penetration depth in the plant cell wall Yu, L.D.
 2003
 206 C p. 586-590
5 p.
 artikel
141 Ion sheath evolution and plasma replenishment inside an 80-mm-diameter pipe for plasma-based ion implantation and deposition Ma, X.X.
 2003
 206 C p. 787-790
4 p.
 artikel
142 Irradiation effect of different heavy ions and track section on the silkworm Bombyx mori Tu, Zhen-Li
 2003
 206 C p. 591-595
5 p.
 artikel
143 Kinetics of solid phase regrowth of self-ion-implanted amorphous SiC during low temperature furnace annealing Eryu, O.
 2003
 206 C p. 969-973
5 p.
 artikel
144 Kinetics of the crystalline to crystalline phase transformation induced in pure zirconia by swift heavy ion irradiation Benyagoub, A.
 2003
 206 C p. 132-138
7 p.
 artikel
145 Laser detection of surface acoustic waves as a method of measuring an Ar ion beam modification of carbon thin film Kitazawa, Sin-iti
 2003
 206 C p. 952-955
4 p.
 artikel
146 Lattice location of Fe in diamond Bharuth-Ram, K.
 2003
 206 C p. 941-946
6 p.
 artikel
147 Lattice site location and optical activity of Er implanted ZnO Alves, E.
 2003
 206 C p. 1047-1051
5 p.
 artikel
148 Martensitic transformation and the stress induced by 3 MeV ion implantation in an austenite stainless steel sheet Wang, Q.
 2003
 206 C p. 118-122
5 p.
 artikel
149 Maskless Mn implantation in GaAs using focused Mn ion beam Itou, M.
 2003
 206 C p. 1013-1017
5 p.
 artikel
150 Measurements of heat flux distribution toward substrate by means of the LiNbO3 interferometer, and electron density in a capacitively coupled rf discharge plasma Mukaigawa, S.
 2003
 206 C p. 777-781
5 p.
 artikel
151 Mechanical properties of zirconium films prepared by ion-beam assisted deposition Mitsuo, A.
 2003
 206 C p. 366-370
5 p.
 artikel
152 Metal precipitation process in polymers induced by ion implantation of 60 keV Cu− Umeda, N.
 2003
 206 C p. 657-662
6 p.
 artikel
153 Microstructure, morphology and their annealing behaviors of alumina films synthesized by ion beam assisted deposition Zhang, Q.Y.
 2003
 206 C p. 357-361
5 p.
 artikel
154 Modeling of surface smoothing process by cluster ion beam irradiation Nakai, A.
 2003
 206 C p. 842-845
4 p.
 artikel
155 Modeling of transient charge collection induced by an angled single ion strike Mori, Hidenobu
 2003
 206 C p. 31-35
5 p.
 artikel
156 Modification in optical properties of negative Cu ion implanted ZnO Kono, K.
 2003
 206 C p. 291-294
4 p.
 artikel
157 Modification of bamboo surface by irradiation of ion beams Wada, M.
 2003
 206 C p. 557-560
4 p.
 artikel
158 Modification of Fe–Ni Invar alloys by high-energy ion beams Ono, F.
 2003
 206 C p. 295-298
4 p.
 artikel
159 Modification of highly oriented pyrolytic graphite (HOPG) surfaces with highly charged ion (HCI) irradiation Koguchi, Y.
 2003
 206 C p. 202-205
4 p.
 artikel
160 Molecular dynamics simulation of vacancy diffusion in tungsten induced by irradiation Xu, Q.
 2003
 206 C p. 123-126
4 p.
 artikel
161 Multi-layered nanocavities in silicon with sequential helium implantation/anneal Rangan, Sanjay
 2003
 206 C p. 417-421
5 p.
 artikel
162 Mutation induced with ion beam irradiation in rose Yamaguchi, H.
 2003
 206 C p. 561-564
4 p.
 artikel
163 Nanoparticles formation in insulators induced by Au− and Au2 − ion implantation Bandourko, V.
 2003
 206 C p. 606-609
4 p.
 artikel
164 Nanostructure fabrication of InP by low energy ion beams Yuba, Yoshihiko
 2003
 206 C p. 648-652
5 p.
 artikel
165 Neurite outgrowth on fluorinated polyimide film micropatterned by ion irradiation Okuyama, Y.
 2003
 206 C p. 543-547
5 p.
 artikel
166 New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon De Salvador, D.
 2003
 206 C p. 922-926
5 p.
 artikel
167 NEXAFS study on substrate temperature dependence of DLC films formed by Ar cluster ion beam assisted deposition Kanda, K.
 2003
 206 C p. 880-883
4 p.
 artikel
168 Nodose carbon nanotubes and its field emission characteristics Feng, Tao
 2003
 206 C p. 198-201
4 p.
 artikel
169 Nonlinear optical properties of metal nanoparticle composites for optical applications Takeda, Y.
 2003
 206 C p. 620-623
4 p.
 artikel
170 Non-linear optical properties of metal nanoparticles implanted in silicate glass Stepanov, A.L.
 2003
 206 C p. 624-628
5 p.
 artikel
171 [No title] Gamo, Kenji
 2003
 206 C p. vii-
1 p.
 artikel
172 Novel nano-fabrication technique utilizing ion beam Nitta, Noriko
 2003
 206 C p. 482-485
4 p.
 artikel
173 Numerical simulation of plasma implanted nitrogen depth profiles in iron Tian, X.B.
 2003
 206 C p. 673-676
4 p.
 artikel
174 n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique Park, C.H.
 2003
 206 C p. 432-435
4 p.
 artikel
175 Observation of local heating in an ion track by measuring the ion-induced luminescence spectrum Koshimizu, M.
 2003
 206 C p. 57-60
4 p.
 artikel
176 Observation of transient current induced in silicon carbide diodes by ion irradiation Ohshima, Takeshi
 2003
 206 C p. 979-983
5 p.
 artikel
177 Optical characterization of Er-implanted ZnO films formed by sol–gel method Fukudome, T.
 2003
 206 C p. 287-290
4 p.
 artikel
178 Optical properties of YSZ implanted with Ag ions Saito, Y.
 2003
 206 C p. 272-276
5 p.
 artikel
179 Optimization of flux ratio of C60 molecule to Ar cluster ion for diamond-like carbon film deposition by NEXAFS measurement Miyauchi, K.
 2003
 206 C p. 893-897
5 p.
 artikel
180 Phase composition and crystalline structure of titanium nitride deposited on silicon by an ion-beam assisted deposition technique Yokota, Katsuhiro
 2003
 206 C p. 386-389
4 p.
 artikel
181 Photoinduced hydrophilicity of TiO2 thin film modified by Ar ion beam irradiation Takeuchi, M.
 2003
 206 C p. 259-263
5 p.
 artikel
182 Photoluminescence and reflectance measurements on annealed porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII) Beloto, A.F.
 2003
 206 C p. 677-681
5 p.
 artikel
183 Photon-enhanced secondary electron emission at target in plasma immersion ion implantation Nakamura, Keiji
 2003
 206 C p. 798-802
5 p.
 artikel
184 Physical origin of ion mixing induced amorphization and associated asymmetric growth in the binary metal systems Hu, L.
 2003
 206 C p. 127-131
5 p.
 artikel
185 Plasma-sheath expansion around trenches in plasma immersion ion implantation Rauschenbach, B.
 2003
 206 C p. 803-807
5 p.
 artikel
186 Platelet adhesion and plasma protein adsorption control of collagen surfaces by He+ ion implantation Kurotobi, K.
 2003
 206 C p. 532-537
6 p.
 artikel
187 Positive pulse bias method in plasma-based ion implantation Ikehata, T.
 2003
 206 C p. 782-786
5 p.
 artikel
188 Potassium ion implantation into glassy carbon Nakao, A.
 2003
 206 C p. 211-214
4 p.
 artikel
189 Preferential sputtering from the surface of amorphous carbon nitride (a-C:N) thin films upon ion implantation Kakiuchi, H.
 2003
 206 C p. 27-30
4 p.
 artikel
190 Preparation of high-purity Cu films by non-mass separated ion beam deposition Lim, J.-W.
 2003
 206 C p. 371-376
6 p.
 artikel
191 Processing of nano-holes and pores on SiO2 thin films by MeV heavy ions Milanez Silva, C.
 2003
 206 C p. 486-489
4 p.
 artikel
192 Properties of diamond like carbon films by plasma based ion implantation and deposition method applying radio frequency wave and negative high voltage pulses through single feedthrough Tojo, H.
 2003
 206 C p. 717-720
4 p.
 artikel
193 Properties of thick DLC films prepared by plasma-based ion implantation and deposition using combined RF and H.V. pulses Oka, Y.
 2003
 206 C p. 700-703
4 p.
 artikel
194 Proton radiation analysis of multi-junction space solar cells Sumita, T.
 2003
 206 C p. 448-451
4 p.
 artikel
195 Quantum-dimensional structures produced by ion implantation Gerasimenko, N.N.
 2003
 206 C p. 644-647
4 p.
 artikel
196 Radiation damage effects in superplastic 3Y-TZP irradiated with Zr ions Motohashi, Y.
 2003
 206 C p. 144-147
4 p.
 artikel
197 Radiation-damage recovery in undoped and oxidized Li doped MgO crystals implanted with lithium ions Alves, E.
 2003
 206 C p. 148-152
5 p.
 artikel
198 Radiation effects in diamond induced by negative gold ions Suga, T.
 2003
 206 C p. 947-951
5 p.
 artikel
199 Radioluminescence of alumina during proton and heavy ion irradiation Plaksin, O.A.
 2003
 206 C p. 1083-1087
5 p.
 artikel
200 RAPD analysis of mutants obtained by ion beam irradiation to hinoki cypress shoot primordia Ishii, K.
 2003
 206 C p. 570-573
4 p.
 artikel
201 RBS and SEM analysis of the nickel–fullerene hybrid systems Vacik, Jiri
 2003
 206 C p. 395-398
4 p.
 artikel
202 Recrystallization of ion-beam amorphized BSCC thin films Hishita, S.
 2003
 206 C p. 171-174
4 p.
 artikel
203 Reduction of boride-enhanced diffusion by point defect engineering and its application for shallow junction formation Shao, Lin
 2003
 206 C p. 413-416
4 p.
 artikel
204 Reduction of surface roughness by Ta2O5 film formation with O2 cluster ion assisted deposition Fujiwara, Y.
 2003
 206 C p. 870-874
5 p.
 artikel
205 Resistivity of nanostructured Fe–Cr films Heck, C.
 2003
 206 C p. 601-605
5 p.
 artikel
206 Self-organized porous-alumina implantation masks for generating nanoscale arrays Rehn, L.E.
 2003
 206 C p. 490-494
5 p.
 artikel
207 Sequential implantation of halogen and copper ions in silica glass Fukumi, K.
 2003
 206 C p. 353-356
4 p.
 artikel
208 Sheath formation and ion flux distribution inside the trench in plasma-based ion implantation Ikehata, T.
 2003
 206 C p. 772-776
5 p.
 artikel
209 Shrinkage mechanism of nanocavities in amorphous Si under ion irradiation: An in situ study Ruault, M.-O.
 2003
 206 C p. 912-915
4 p.
 artikel
210 SiC precipitates formed in Si by simultaneous dual beam implantation of C+ and Si+ ions Kögler, R.
 2003
 206 C p. 989-993
5 p.
 artikel
211 Simulation study on nanocluster growth by ion beam synthesis Enomoto, Y.
 2003
 206 C p. 596-600
5 p.
 artikel
212 Stable optical thin film deposition with O2 cluster ion beam assisted deposition Toyoda, N.
 2003
 206 C p. 875-879
5 p.
 artikel
213 Stopping of energetic ions in carbon nanotubes Pomoell, J.
 2003
 206 C p. 18-21
4 p.
 artikel
214 Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition Liu, C.
 2003
 206 C p. 348-352
5 p.
 artikel
215 Structural properties of ion beam mixed tungsten/steel layers Piatkowska, A.
 2003
 206 C p. 1052-1055
4 p.
 artikel
216 Structure and optical properties of germanium implanted with carbon ions Wei, P.
 2003
 206 C p. 233-236
4 p.
 artikel
217 Structure and photoluminescent properties of SiC layers on Si, synthesized by pulsed ion-beam treatment Bayazitov, R.M.
 2003
 206 C p. 984-988
5 p.
 artikel
218 Structure and wear resistance of tetrahedral amorphous carbon films Zhang, Xu
 2003
 206 C p. 215-218
4 p.
 artikel
219 Structure of amorphized C60 films studied by Raman spectroscopy and X-ray photoelectron spectroscopy Ookawa, Ryosuke
 2003
 206 C p. 175-178
4 p.
 artikel
220 Study of single-event current pulses induced in SOI diodes by collimated swift heavy-ions micro-beams Hirao, Toshio
 2003
 206 C p. 457-461
5 p.
 artikel
221 Study on optical reflection property from multilayer on Si substrate including nanoparticles in SiO2 layer Tsuji, H.
 2003
 206 C p. 615-619
5 p.
 artikel
222 Superplastic deformation characteristics of 3Y-TZP after Zr ion irradiation Shibata, T.
 2003
 206 C p. 139-143
5 p.
 artikel
223 Surface modification of PET film by plasma-based ion implantation Sakudo, N.
 2003
 206 C p. 687-690
4 p.
 artikel
224 Surface morphology of glassy carbon irradiated with nitrogen ions Takahiro, Katsumi
 2003
 206 C p. 206-210
5 p.
 artikel
225 TCAD modeling of single MeV ion induced charge collection processes in Si devices Laird, Jamie Stuart
 2003
 206 C p. 36-41
6 p.
 artikel
226 The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation – The search for gain Elliman, R.G.
 2003
 206 C p. 427-431
5 p.
 artikel
227 The influence of DC biasing on the uniformity of a-C:H films for three-dimensional substrates by using a plasma-based ion implantation technique Watanabe, Toshiya
 2003
 206 C p. 726-730
5 p.
 artikel
228 The microstructures of yttria-stabilized zirconia deposited with ion-plating apparatus Xu, G.C.
 2003
 206 C p. 362-365
4 p.
 artikel
229 The TiN/AlN multilayers deposited by filtered vacuum arc deposition Zhang, Xu
 2003
 206 C p. 382-385
4 p.
 artikel
230 The use of cavities for gettering in silicon microelectronic devices Donnelly, S.E.
 2003
 206 C p. 422-426
5 p.
 artikel
231 Thickness of ion implanted layers as determined by elastic recoil detection analysis and spectroscopic ellipsometry Mändl, S.
 2003
 206 C p. 668-672
5 p.
 artikel
232 Three-step amorphisation process in ion-implanted GaN at 15 K Wendler, E.
 2003
 206 C p. 1028-1032
5 p.
 artikel
233 Titanium-dioxide film formation using gas cluster ion beam assisted deposition technique Nakatsu, O.
 2003
 206 C p. 866-869
4 p.
 artikel
234 TMR effects of sputtered Fe–Al–O granular films after irradiation by high energy ions Hayashi, N.
 2003
 206 C p. 1066-1071
6 p.
 artikel
235 Uniform coating of thick DLC film on three-dimensional substrates Nishimura, Y.
 2003
 206 C p. 696-699
4 p.
 artikel
236 Uptake of light elements of nanoporous layers formed by helium ion implantation Johnson, P.B.
 2003
 206 C p. 1056-1061
6 p.
 artikel
237 Using ion implantation to study localized corrosion of Al Johnson, C.M.
 2003
 206 C p. 1062-1065
4 p.
 artikel
238 UV-ray photoelectron and ab initio band calculation studies on electronic structures of Cr- or Nb-ion implanted titanium dioxide Umebayashi, T.
 2003
 206 C p. 264-267
4 p.
 artikel
239 Visualization of vacancy type defects in the R P/2 region of ion implanted and annealed silicon Peeva, A.
 2003
 206 C p. 71-75
5 p.
 artikel
240 Voltage dependence of cluster size in carbon films using plasma immersion ion implantation McKenzie, D.R.
 2003
 206 C p. 741-744
4 p.
 artikel
241 Wear properties of tungsten-implanted polyimide Kobayashi, T.
 2003
 206 C p. 1110-1114
5 p.
 artikel
242 Wide variety of flower-color and -shape mutants regenerated from leaf cultures irradiated with ion beams Okamura, M.
 2003
 206 C p. 574-578
5 p.
 artikel
                             242 gevonden resultaten
 
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