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                             183 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accumulation of decelerated gold ions Ratschko, D.
 2002
 190 1-4 p. 217-221
5 p.
 artikel
2 Accurate depth profiling through energy-dependent pulse height deficit compensation in gas ionization detectors Weijers, T.D.M.
 2002
 190 1-4 p. 397-401
5 p.
 artikel
3 Accurate hydrogen depth profiling by reflection elastic recoil detection analysis Verda, R.D.
 2002
 190 1-4 p. 419-422
4 p.
 artikel
4 Activation and dopant sites of ultra-shallow implanted boron and arsenic in silicon Kobayashi, H.
 2002
 190 1-4 p. 547-551
5 p.
 artikel
5 Advanced characterization of high-k materials: A nuclear approach Brijs, B
 2002
 190 1-4 p. 505-509
5 p.
 artikel
6 Aerosol characterisation in Italian towns by IBA techniques Ariola, V.
 2002
 190 1-4 p. 471-476
6 p.
 artikel
7 Analysis of metallic pigments by ion microbeam Pelicon, P.
 2002
 190 1-4 p. 370-374
5 p.
 artikel
8 Analysis of sapphire implanted with different elements using artificial neural networks Vieira, A.
 2002
 190 1-4 p. 241-246
6 p.
 artikel
9 An empirical formula for L line X-ray production cross-section of elements from Ag to U for protons below 3.5 MeV Strivay, D
 2002
 190 1-4 p. 112-116
5 p.
 artikel
10 Annealing reactions in lead implanted copper Johansen, A.
 2002
 190 1-4 p. 802-806
5 p.
 artikel
11 Application of atomic and nuclear techniques to the study of inhomogeneities in electrodeposited α-particle sources Martı́n Sánchez, A.
 2002
 190 1-4 p. 747-750
4 p.
 artikel
12 Application of NRA to evaluation of boron implants in Si for shallow junctions Suzuki, M.
 2002
 190 1-4 p. 552-555
4 p.
 artikel
13 Application of synchrotron radiation technique to analysis of environmental samples Zaw, Myint
 2002
 190 1-4 p. 856-859
4 p.
 artikel
14 Application of the micro-PIXE technique for analyzing arsenic in biomat and lower plants of lichen and mosses around an arsenic mine site, at Gunma, Japan Ohnuki, T.
 2002
 190 1-4 p. 477-481
5 p.
 artikel
15 Applying elastic backscattering spectrometry when the nuclear excitation function has a fine structure Gurbich, A.F.
 2002
 190 1-4 p. 237-240
4 p.
 artikel
16 Assessment of pulse height defect in passivated implanted planar Si detectors used for channeling measurements with slow, highly charged heavy projectiles Meyer, J.D.
 2002
 190 1-4 p. 379-382
4 p.
 artikel
17 Atomic mixing in thin film systems by swift heavy ions Bolse, Wolfgang
 2002
 190 1-4 p. 173-176
4 p.
 artikel
18 Author index 2002
 190 1-4 p. 887-906
20 p.
 artikel
19 Axial ion–electron emission microscopy of IC radiation hardness Doyle, B.L.
 2002
 190 1-4 p. 19-25
7 p.
 artikel
20 Carbon KVV Auger electron emission from highly oriented pyrolytic graphite bombarded by fast protons Kudo, Hiroshi
 2002
 190 1-4 p. 160-163
4 p.
 artikel
21 Change of preferred orientation in TiN thin films grown by ultrahigh vacuum reactive ion beam assisted deposition Shin, H.J.
 2002
 190 1-4 p. 807-812
6 p.
 artikel
22 Characterisation of amorphous silicon solar cells by IBA methods Medunić, Z.
 2002
 190 1-4 p. 611-614
4 p.
 artikel
23 Characterisation of titanium nitride thin films prepared using PVD and a plasma immersion ion implantation system Lim, S.H.N.
 2002
 190 1-4 p. 723-727
5 p.
 artikel
24 Characterization of ion-beam-induced amorphous structures by advanced electron microscopy Ishimaru, Manabu
 2002
 190 1-4 p. 882-886
5 p.
 artikel
25 Characterization of SiC thermal oxidation Radtke, C.
 2002
 190 1-4 p. 579-582
4 p.
 artikel
26 Charge state distributions of heavy ions after scattering at surface atoms Klein, C.
 2002
 190 1-4 p. 122-126
5 p.
 artikel
27 Clustering in Pb thin films on Si(111) and Pb-induced Si surface ordering Rout, B.
 2002
 190 1-4 p. 641-645
5 p.
 artikel
28 Cold ion-cutting of hydrogen implanted Si Henttinen, K.
 2002
 190 1-4 p. 761-766
6 p.
 artikel
29 Collapse of nanocavities studied by ion-channeling and Raman spectroscopy Johnson, B.C.
 2002
 190 1-4 p. 602-605
4 p.
 artikel
30 Combinatorial synthesis of ZnTe nanocrystals in SiO2 on silicon by ion implantation Großhans, I.
 2002
 190 1-4 p. 865-868
4 p.
 artikel
31 Combined PIXE and SEM study of the behaviour of trace elements in gel formed around implant coated with bioactive glass Oudadesse, H.
 2002
 190 1-4 p. 458-465
8 p.
 artikel
32 Composition analysis of the insulating barrier in magnetic tunnel junctions by grazing angle of incidence RBS Wei, P.
 2002
 190 1-4 p. 684-688
5 p.
 artikel
33 Contents 2002
 190 1-4 p. xiv-xxii
nvt p.
 artikel
34 Cross-sections of 11 B(p,α)8Be reaction for boron analysis Liu, Jiarui
 2002
 190 1-4 p. 107-111
5 p.
 artikel
35 Depth profiles of cluster-ion-implanted BSi in silicon Liang, Jenq-Horng
 2002
 190 1-4 p. 767-771
5 p.
 artikel
36 Detection limit improvement for Mg in marine foraminiferal calcite by using helium induced X-ray emission Beck, L.
 2002
 190 1-4 p. 482-487
6 p.
 artikel
37 Detection system for depth profiling of radiotracers Laitinen, Pauli
 2002
 190 1-4 p. 183-185
3 p.
 artikel
38 Determination of the erbium lattice site in bismuth tellurite using PIXE/channeling Kling, A.
 2002
 190 1-4 p. 556-559
4 p.
 artikel
39 Deuterium channeling study of disorder in Al2 2+-implanted 6H-SiC Jiang, W.
 2002
 190 1-4 p. 636-640
5 p.
 artikel
40 Deuteron induced gamma-ray emission method applied at a nuclear microprobe for carbon and oxygen content measurements Elekes, Z.
 2002
 190 1-4 p. 291-295
5 p.
 artikel
41 Development of enhanced depth-resolution technique for shallow dopant profiles Fujita, M.
 2002
 190 1-4 p. 26-33
8 p.
 artikel
42 Discovery of the rate limiting step in solid oxide fuel cells by LEIS de Ridder, M.
 2002
 190 1-4 p. 732-735
4 p.
 artikel
43 Dynamic Monte Carlo simulation of surface composition change during sputter depth profiling Miyagawa, Yoshiko
 2002
 190 1-4 p. 256-260
5 p.
 artikel
44 Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature Kucheyev, S.O.
 2002
 190 1-4 p. 782-786
5 p.
 artikel
45 Efficiency enhancements to Monte Carlo simulation of heavy ion elastic recoil detection analysis spectra Franich, R.D.
 2002
 190 1-4 p. 252-255
4 p.
 artikel
46 Elastic recoil detection analysis on the ANSTO heavy ion microprobe Siegele, R.
 2002
 190 1-4 p. 301-305
5 p.
 artikel
47 Electrical characteristics of proton irradiated AlGaN devices Hearne, S.M.
 2002
 190 1-4 p. 873-877
5 p.
 artikel
48 Electronic energy loss of swift protons in the oxides Al2O3, SiO2 and ZrO2 Abril, Isabel
 2002
 190 1-4 p. 89-94
6 p.
 artikel
49 Electronic stopping power of swift heavy ions in carbon Zhang, Yanwen
 2002
 190 1-4 p. 69-73
5 p.
 artikel
50 Energy loss measurements of H2 and H3 molecular beams along random and 〈110〉 directions of Si Behar, M.
 2002
 190 1-4 p. 74-78
5 p.
 artikel
51 External PIGE–PIXE measurements at the São Paulo 8UD tandem accelerator Rizzutto, M.A.
 2002
 190 1-4 p. 186-189
4 p.
 artikel
52 Filiform corrosion imaged beneath protection layers on Al alloys Szymanski, R.
 2002
 190 1-4 p. 365-369
5 p.
 artikel
53 Fitting of RBS data including roughness: Application to Co/Re multilayers Barradas, N.P.
 2002
 190 1-4 p. 247-251
5 p.
 artikel
54 Fundamental effects and non-linear Si detector response Whitlow, Harry J.
 2002
 190 1-4 p. 375-378
4 p.
 artikel
55 Heavy metal pathways and archives in biological tissue Orlic, I
 2002
 190 1-4 p. 439-444
6 p.
 artikel
56 Helium elastic scattering from carbon for 30° to 150° in the energy region from 2 to 4.8 MeV Bogdanović Radović, I.
 2002
 190 1-4 p. 100-106
7 p.
 artikel
57 High ion-beam induced electron yields from polycrystalline diamond Hoxley, D.I.
 2002
 190 1-4 p. 151-153
3 p.
 artikel
58 High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structures Osipowicz, T.
 2002
 190 1-4 p. 345-350
6 p.
 artikel
59 Hydrogen analyses of titanium hydride by ERD and NRG methods Tsuchiya, B.
 2002
 190 1-4 p. 699-703
5 p.
 artikel
60 Hydrogen analysis of CVD homoepitaxial diamond films by high-resolution elastic recoil detection Kimura, K.
 2002
 190 1-4 p. 689-692
4 p.
 artikel
61 Hydrogen analysis of mineral samples at University of Tsukuba Sasa, K.
 2002
 190 1-4 p. 287-290
4 p.
 artikel
62 Hydrogen depth resolution in multilayer metal structures, comparison of elastic recoil detection and resonant nuclear reaction method Wielunski, L.S.
 2002
 190 1-4 p. 693-698
6 p.
 artikel
63 Hyperfine interaction studies with monolayer depth resolution using ultra-low energy radioactive ion beams Vantomme, A.
 2002
 190 1-4 p. 840-845
6 p.
 artikel
64 IBA-15 Committees 2002
 190 1-4 p. ix-xi
nvt p.
 artikel
65 IBA-15 Conference photographs 2002
 190 1-4 p. xii-xiii
nvt p.
 artikel
66 Implantation sites of Ce and Gd in diamond Bharuth-Ram, K.
 2002
 190 1-4 p. 835-839
5 p.
 artikel
67 Implantation temperature dependence of He bubble formation in Si da Silva, D.L.
 2002
 190 1-4 p. 756-760
5 p.
 artikel
68 Impurity gettering by cavities in Si investigated with the PAC technique Bartels, J.
 2002
 190 1-4 p. 846-850
5 p.
 artikel
69 Impurity measurements in semiconductor materials using trace element accelerator mass spectrometry McDaniel, F.D.
 2002
 190 1-4 p. 826-830
5 p.
 artikel
70 Inclusion of Mg impurities in YBCO films on MgO substrate during sputter deposition Matsunami, N.
 2002
 190 1-4 p. 679-683
5 p.
 artikel
71 Incorporation of tungsten in lithium niobate by diffusion Kling, A.
 2002
 190 1-4 p. 524-527
4 p.
 artikel
72 In-depth concentration distribution of Ar in Si surface after low-energy Ar+ ion sputtering Oh, D.W.
 2002
 190 1-4 p. 598-601
4 p.
 artikel
73 Initial oxidation of AlPdMn quasicrystals – A study by high-resolution RBS and ERDA Plachke, D.
 2002
 190 1-4 p. 646-651
6 p.
 artikel
74 Insight in the outside: New applications of low-energy ion scattering Brongersma, Hidde H.
 2002
 190 1-4 p. 11-18
8 p.
 artikel
75 In situ diffusion measurements during RBS analysis of polymers coated with aluminium Mändl, S.
 2002
 190 1-4 p. 728-731
4 p.
 artikel
76 In situ ERD analysis of sol–gel films during thermal processing Dytlewski, N.
 2002
 190 1-4 p. 199-202
4 p.
 artikel
77 In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon Azevedo, G.de M.
 2002
 190 1-4 p. 772-776
5 p.
 artikel
78 Intercomparison of electron probe micro-analyses and particle induced X-ray emission analyses of Pt–Pd–Ni–S matrices Merkle, R.K.W.
 2002
 190 1-4 p. 821-825
5 p.
 artikel
79 Investigation of the environment of Cr ions implanted into sapphire Norman, M.J.
 2002
 190 1-4 p. 533-537
5 p.
 artikel
80 Investigation of the radiation hardness on semiconductor devices using the ion micro-beam Nishijima, T.
 2002
 190 1-4 p. 329-334
6 p.
 artikel
81 Ion beam analysis 2002
 190 1-4 p. v-
1 p.
 artikel
82 Ion beam analysis of aluminium in thin layers Healy, M.J.F.
 2002
 190 1-4 p. 630-635
6 p.
 artikel
83 Ion beam analysis of aluminium ion implanted titanium diboride thin films Mollica, S.
 2002
 190 1-4 p. 736-741
6 p.
 artikel
84 Ion beam analysis of helium and its irradiation effect on hydrogen trapping in W single crystals Nagata, S.
 2002
 190 1-4 p. 652-656
5 p.
 artikel
85 Ion beam analysis of ion-assisted deposited amorphous GaN Kennedy, V.J.
 2002
 190 1-4 p. 620-624
5 p.
 artikel
86 Ion beam analysis of light elements in nanoporous surfaces produced by single- and multiple-energy helium ion implantation Markwitz, A.
 2002
 190 1-4 p. 718-722
5 p.
 artikel
87 Ion beam analysis of the segregation and solubility of iridium during silicon crystallization Almendra, A.
 2002
 190 1-4 p. 583-586
4 p.
 artikel
88 Ion beam analysis of Zn2−2x Cu x In xS2 films Spemann, D.
 2002
 190 1-4 p. 667-672
6 p.
 artikel
89 Ion beam induced charge characterisation of a silicon microdosimeter using a heavy ion microprobe Cornelius, Iwan
 2002
 190 1-4 p. 335-338
4 p.
 artikel
90 Ion-beam-induced-charge characterisation of particle detectors Yang, C.
 2002
 190 1-4 p. 212-216
5 p.
 artikel
91 Ion beam induced desorption from thin films: SiO2 single layers and SiO2/Si multilayers Arnoldbik, W.M.
 2002
 190 1-4 p. 433-438
6 p.
 artikel
92 Ion beam induced luminescence of materials Brooks, R.J.
 2002
 190 1-4 p. 136-140
5 p.
 artikel
93 Ion beam induced luminescence of thin films Brooks, R.J.
 2002
 190 1-4 p. 709-713
5 p.
 artikel
94 Ion beam methods to determine trace heavy metals concentrations and sources in urban airsheds Cohen, David D.
 2002
 190 1-4 p. 466-470
5 p.
 artikel
95 Ion beam studies of high-k ultrathin films deposited on Si Pezzi, R.P.
 2002
 190 1-4 p. 510-513
4 p.
 artikel
96 Ion implantation of rare earth ions for light emitters Buchal, Ch.
 2002
 190 1-4 p. 40-46
7 p.
 artikel
97 Ion-induced photon spectroscopy of insulators and application to in-situ diagnostics of nanoparticle formation processes Kishimoto, N.
 2002
 190 1-4 p. 207-211
5 p.
 artikel
98 Ionoluminescence decay measured with single ions McDaniel, F.D.
 2002
 190 1-4 p. 1-10
10 p.
 artikel
99 Ion–solid interactions and defects in silicon carbide Weber, W.J.
 2002
 190 1-4 p. 261-265
5 p.
 artikel
100 Isolated cluster ion impact on solid surfaces HOPG, Si and Cu(TiO2)/Si surfaces Song, Jae-Hoon
 2002
 190 1-4 p. 792-796
5 p.
 artikel
101 JAERI Takasaki in-air micro-PIXE system for various applications Sakai, Takuro
 2002
 190 1-4 p. 271-275
5 p.
 artikel
102 Lattice location of implanted Ag in Si Wahl, U.
 2002
 190 1-4 p. 543-546
4 p.
 artikel
103 Light emission from oxygen covered Al and Cu surfaces Lee, C.S.
 2002
 190 1-4 p. 141-145
5 p.
 artikel
104 Measurement of (p,p) elastic differential cross-sections for carbon, nitrogen, oxygen, aluminium and silicon in the 500–2500 keV range at 140° and 178° laboratory scattering angles Ramos, A.R.
 2002
 190 1-4 p. 95-99
5 p.
 artikel
105 Measurements of Si ion stopping in amorphous silicon Whitlow, Harry J.
 2002
 190 1-4 p. 84-88
5 p.
 artikel
106 Medium energy ion-nanoprobe with TOF-RBS for semiconductor process analysis Iwasaki, K.
 2002
 190 1-4 p. 296-300
5 p.
 artikel
107 MeV microprobe analysis of polymer films: radiation damage aspects Delto, R.
 2002
 190 1-4 p. 318-323
6 p.
 artikel
108 Micro-ERDA studies of hydrogen in polycrystalline CVD diamond windows Samlenski, R.
 2002
 190 1-4 p. 324-328
5 p.
 artikel
109 Micro-RBS characterisation of the chemical composition and particulate deposition on pulsed laser deposited Si1−x Ge x thin films Simon, A.
 2002
 190 1-4 p. 351-356
6 p.
 artikel
110 Narrow nuclear resonance profiling of Al with subnanometric depth resolution da Rosa, E.B.O.
 2002
 190 1-4 p. 538-542
5 p.
 artikel
111 Neutralization of He ions scattered from Ca surface Sasaki, M.
 2002
 190 1-4 p. 127-130
4 p.
 artikel
112 Non-destructive analysis and appraisal of ancient Chinese porcelain by PIXE Cheng, H.S.
 2002
 190 1-4 p. 488-491
4 p.
 artikel
113 Non-linear effect on radiation damage of silicon by cluster ion bombardment Liu, Jiarui
 2002
 190 1-4 p. 787-791
5 p.
 artikel
114 Nuclear microprobe analysis of U-doped (Bi,Pb)2Sr2Ca2Cu3O y /Ag superconducting tapes Rout, B.
 2002
 190 1-4 p. 357-364
8 p.
 artikel
115 On the determination of nitrogen in carbon matrix by deuteron induced gamma-ray emission technique Sziki, G.Á.
 2002
 190 1-4 p. 714-717
4 p.
 artikel
116 Optical properties of nanoparticle composites in insulators by high-flux 60 keV Cu− implantation Takeda, Y.
 2002
 190 1-4 p. 797-801
5 p.
 artikel
117 Optimal geometry for GeSi/Si super-lattice structure RBS investigation Wielunski, L.S.
 2002
 190 1-4 p. 414-418
5 p.
 artikel
118 Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC Vickridge, I.C.
 2002
 190 1-4 p. 574-578
5 p.
 artikel
119 PIXE and RBS investigation of growth phases of ultra-thin chemical bath deposited CdS films Duncan, P.C.
 2002
 190 1-4 p. 615-619
5 p.
 artikel
120 PIXE cluster analysis of ancient ceramics from North Syria Kieft, I.E.
 2002
 190 1-4 p. 492-496
5 p.
 artikel
121 Planar MeV ion channeling on strained buried nanofilms Selen, L.J.M.
 2002
 190 1-4 p. 570-573
4 p.
 artikel
122 Platinum atom location on the internal walls of nanocavities investigated by ion channeling analysis Kinomura, A.
 2002
 190 1-4 p. 606-610
5 p.
 artikel
123 Proton beam micromachined resolution standards for nuclear microprobes Watt, F.
 2002
 190 1-4 p. 306-311
6 p.
 artikel
124 Proton beam micromachining: electron emission from SU-8 resist during ion beam irradiation Bettiol, A.A.
 2002
 190 1-4 p. 154-159
6 p.
 artikel
125 Proton-induced γ-ray analysis of lithium in thick samples Mateus, R.
 2002
 190 1-4 p. 117-121
5 p.
 artikel
126 Proton induced X-ray emission and proton induced gamma ray emission analysis in geochemical exploration for gold and base metal deposits Pwa, Aung
 2002
 190 1-4 p. 501-504
4 p.
 artikel
127 Quantitative analysis of the oxygen content in TiO2 films deposited by electron-beam evaporation using 16 O(α,α) 16 O resonant elastic scattering Jiang, J.C.
 2002
 190 1-4 p. 514-517
4 p.
 artikel
128 Random stopping power and energy straggling of 16 O ions into amorphous Si target Araujo, L.L.
 2002
 190 1-4 p. 79-83
5 p.
 artikel
129 Rapid chemical state analysis by a highly sensitive high-resolution PIXE system Maeda, K.
 2002
 190 1-4 p. 704-708
5 p.
 artikel
130 RBS analysis of trace gas uptake on ice Huthwelker, T.
 2002
 190 1-4 p. 47-53
7 p.
 artikel
131 RBS/channeling analysis of epitaxial films with Nb buffer layer on sapphire substrate Yamamoto, S.
 2002
 190 1-4 p. 657-660
4 p.
 artikel
132 RBS-channeling measurements of sapphire (001) substrate implanted with high-energy O and Cu ions Nakao, S.
 2002
 190 1-4 p. 528-532
5 p.
 artikel
133 RBS study of the reactions in the Si/Co/Ta/Co system after isothermal annealings between 360 and 650 °C Franklyn, C.
 2002
 190 1-4 p. 742-746
5 p.
 artikel
134 RBS without humans Barradas, N.P.
 2002
 190 1-4 p. 231-236
6 p.
 artikel
135 Real-time evolution of ion–surface interactions of MgAl2O3 and LiNbO3 detected by ion-induced photon spectroscopy Bandourko, V.
 2002
 190 1-4 p. 146-150
5 p.
 artikel
136 Real-time measurement of implanted deuterons by using the nuclear reaction 2 H(d,p) 3 H Kawachi, N.
 2002
 190 1-4 p. 195-198
4 p.
 artikel
137 Release of nitrogen from SiO x N y films during RBS measurement Kimura, K.
 2002
 190 1-4 p. 423-427
5 p.
 artikel
138 Response of Si p-i-n diode and Au/n-Si surface barrier detector to heavy ions Zhang, Yanwen
 2002
 190 1-4 p. 383-386
4 p.
 artikel
139 Role of oxides in high velocity thermal spray coatings Trompetter, W.J.
 2002
 190 1-4 p. 518-523
6 p.
 artikel
140 Rutherford backscattering spectroscopy and elastic recoil detection analysis with lithium ions – The better alternative to helium? Mayer, M.
 2002
 190 1-4 p. 405-409
5 p.
 artikel
141 Scanning transmission ion microscopy tomography at the Leipzig nanoprobe LIPSION Reinert, T.
 2002
 190 1-4 p. 266-270
5 p.
 artikel
142 Secondary ion mass spectrometry with gas cluster ion beams Toyoda, Noriaki
 2002
 190 1-4 p. 860-864
5 p.
 artikel
143 Silicon detector response to heavy ions at energies of 1–2 MeV/amu Weijers, T.D.M.
 2002
 190 1-4 p. 387-392
6 p.
 artikel
144 Simple concepts for ion source improvement Hausladen, P.A.
 2002
 190 1-4 p. 402-404
3 p.
 artikel
145 Simplified methodology of the ultra-thin layer activation technique Vincent, L.
 2002
 190 1-4 p. 831-834
4 p.
 artikel
146 Simultaneous wide-range stopping power determination for several ions Alanko, T.
 2002
 190 1-4 p. 60-63
4 p.
 artikel
147 Single photon ionisation of self assembled monolayers King, B.V.
 2002
 190 1-4 p. 203-206
4 p.
 artikel
148 Spatial and energy distributions of the fragments resulting from the dissociation of swift molecular ions in solids Heredia-Avalos, Santiago
 2002
 190 1-4 p. 131-135
5 p.
 artikel
149 Stopping power of swift neon ions in dependence on the charge state in the non-equilibrium regime Blazevic, A.
 2002
 190 1-4 p. 64-68
5 p.
 artikel
150 Strain and compositional profile determination in ion bombarded heterostructures by the complementary use of RBS/channeling and high resolution X-ray diffraction Turos, A.
 2002
 190 1-4 p. 565-569
5 p.
 artikel
151 Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering Alves, E.
 2002
 190 1-4 p. 560-564
5 p.
 artikel
152 Strontium in 19th century Australian children's teeth Williams, A.-M.M.
 2002
 190 1-4 p. 453-457
5 p.
 artikel
153 Structural characterization of amorphised InAs with synchrotron radiation Azevedo, G.de M.
 2002
 190 1-4 p. 851-855
5 p.
 artikel
154 Structure dependent electronic sputtering of a-C:H films by swift heavy ions Ghosh, S.
 2002
 190 1-4 p. 164-168
5 p.
 artikel
155 Studies of electronic sputtering of fullerene under swift heavy ion impact Ghosh, S.
 2002
 190 1-4 p. 169-172
4 p.
 artikel
156 Study by PIXE method of trace elements transferred from prostheses to soft tissues and organs Oudadesse, H.
 2002
 190 1-4 p. 445-448
4 p.
 artikel
157 Study of calcium implanted GaN Alves, E.
 2002
 190 1-4 p. 625-629
5 p.
 artikel
158 Study of the permeability of thin films of a-Si:H using MeV ion beams Brockhoff, A.M.
 2002
 190 1-4 p. 226-230
5 p.
 artikel
159 Sub-micron channeling contrast microscopy on reactive ion etched deep Si microstructures Teo, E.J.
 2002
 190 1-4 p. 339-344
6 p.
 artikel
160 Substitution and electrical activation of carbon in C- and C+P-implanted InP Kushida, K.
 2002
 190 1-4 p. 869-872
4 p.
 artikel
161 Suitable test structures for submicron ion beam analysis Spemann, D.
 2002
 190 1-4 p. 312-317
6 p.
 artikel
162 Surface modification of a fuel cell material by ion implantation Vervoort, A.G.J.
 2002
 190 1-4 p. 813-816
4 p.
 artikel
163 Surface properties of electrolyte solutions studied with ion beam analysis Andersson, G.
 2002
 190 1-4 p. 222-225
4 p.
 artikel
164 Surface quality studies of high-T c superconductors of the Hg-, Tl- and Hg x Tl1−x -families: RBS and resonant C and O backscattering studies Vantomme, A.
 2002
 190 1-4 p. 673-678
6 p.
 artikel
165 Surface segregation of Ge during Si growth on Ge/Si(001) at low temperature observed by high-resolution RBS Nakajima, K.
 2002
 190 1-4 p. 587-591
5 p.
 artikel
166 The development of a time of flight spectrometer for LARN Mathot, G.
 2002
 190 1-4 p. 190-194
5 p.
 artikel
167 The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire Gurarie, V.N.
 2002
 190 1-4 p. 751-755
5 p.
 artikel
168 The effect of potassium on the rate of solid phase epitaxy in silicon Liu, A.C.Y.
 2002
 190 1-4 p. 777-781
5 p.
 artikel
169 The external beam microprobe facility in Florence: Set-up and performance Massi, M.
 2002
 190 1-4 p. 276-282
7 p.
 artikel
170 The new Melbourne nuclear microprobe system Jamieson, D.N.
 2002
 190 1-4 p. 54-59
6 p.
 artikel
171 The novel HVEE 5 MV Tandetron™ Gottdang, A
 2002
 190 1-4 p. 177-182
6 p.
 artikel
172 The performance of the Ljubljana ion microprobe Simičič, J.
 2002
 190 1-4 p. 283-286
4 p.
 artikel
173 The point defect engineering approaches for ultra-shallow boron junction formation in silicon Chu, W.-K.
 2002
 190 1-4 p. 34-39
6 p.
 artikel
174 The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process Höchbauer, T.
 2002
 190 1-4 p. 592-597
6 p.
 artikel
175 15th International Conference on Ion-Beam Analysis (IBA-15) 2002
 190 1-4 p. vii-viii
nvt p.
 artikel
176 Threshold stoichiometry for beam induced nitrogen depletion of SiN Timmers, H.
 2002
 190 1-4 p. 428-432
5 p.
 artikel
177 Trace element analysis of blood samples from mentally challenged children by PIXE Ashok Kumar, R.
 2002
 190 1-4 p. 449-452
4 p.
 artikel
178 Trace elements measurement by PIXE in the appraisal of the ancient potteries Zhang, Z.Q.
 2002
 190 1-4 p. 497-500
4 p.
 artikel
179 Unique capabilities of heavy ion elastic recoil detection with gas ionization detectors Timmers, H.
 2002
 190 1-4 p. 393-396
4 p.
 artikel
180 Use of nuclear microanalysis to study the oxygenation mechanism of Y1Ba2Cu3O7−x thin films: estimation of the oxygen diffusion coefficients Garcı́a López, J.
 2002
 190 1-4 p. 661-666
6 p.
 artikel
181 Use of reference samples for more accurate RBS analyses Lanford, W.A.
 2002
 190 1-4 p. 410-413
4 p.
 artikel
182 X-ray determination of strain in ion implanted GaN Qadri, S.B.
 2002
 190 1-4 p. 878-881
4 p.
 artikel
183 X-ray reflectivity of ion-beam-deposited Ag/Al multilayers Qadri, Syed B.
 2002
 190 1-4 p. 817-820
4 p.
 artikel
                             183 gevonden resultaten
 
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