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                             26 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes Gökçen, M.
2012
42 1 p. 103-108
artikel
2 Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors Liu, Xiang
2012
42 1 p. 33-39
artikel
3 Electromagnetic Properties of Ni0.9Zn0.1CoO2 Said, M. Z.
2012
42 1 p. 151-155
artikel
4 Electronic Materials Based on Co0.5Zn0.5Fe2O4/Pb(Zr0.52Ti0.48)O3 Nanocomposites Mandal, Avinandan
2012
42 1 p. 121-128
artikel
5 Evolution of the Structural and Electrical Properties of GeTe Under Different Annealing Conditions Kim, Ki-Hong
2012
42 1 p. 78-82
artikel
6 Experimental Evaluation of the Effect of Pad Debris Size on Microscratches during CMP Process Yang, Ji Chul
2012
42 1 p. 97-102
artikel
7 Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb3 Su, Taichao
2012
42 1 p. 109-113
artikel
8 High-Temperature Thermoelectric Properties of Compoundsin the System ZnxInyOx+1.5y Amani, Matin
2012
42 1 p. 114-120
artikel
9 Impact of Pad Conditioning on Thickness Profile Control in Chemical Mechanical Planarization Kincal, S.
2012
42 1 p. 83-96
artikel
10 Implantation Studies on Silicon-Doped GaN Simon, Ronnie
2012
42 1 p. 21-25
artikel
11 Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field Chegel, Raad
2012
42 1 p. 58-70
artikel
12 Low-Cycle Fatigue Behavior of 95.8Sn-3.5Ag-0.7Cu Solder Joints Tang, Y.
2012
42 1 p. 192-200
artikel
13 Microstructure of GaN1−xBix Liliental-Weber, Z.
2012
42 1 p. 26-32
artikel
14 Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance Miralaie, M.
2012
42 1 p. 47-57
artikel
15 New Optically Controlled Frequency-Agile Microstrip Antenna Ehteshami, Nasrin
2012
42 1 p. 162-167
artikel
16 Poisson Ratio of Epitaxial Germanium Films Grown on Silicon Bharathan, Jayesh
2012
42 1 p. 40-46
artikel
17 Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors Kim, Hyeongnam
2012
42 1 p. 10-14
artikel
18 Preparation, Characterization, and Microwave Dielectric Properties of Sr2La3Nb1−xTaxTi4O17 (0 ≤ x ≤ 1) Ceramics Manan, Abdul
2012
42 1 p. 138-142
artikel
19 Properties of the Mo Back Contact for the Formationof a Thin-Film Photovoltaic Absorber Wang, S.S.
2012
42 1 p. 71-77
artikel
20 Quantum Transport Properties of Graphene Nanoribbons with Defects and Dephasing Scattering Processes Sun, Guo-Ya
2012
42 1 p. 1-9
artikel
21 Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide–Electrode System Through First-Principles Calculations Aspera, Susan Meñez
2012
42 1 p. 143-150
artikel
22 Structure and Photoluminescent Properties of B3+-Doped (Y0.9Dy0.1)InGe2O7 Phosphor Teoh, Lay-Gaik
2012
42 1 p. 156-161
artikel
23 Synthesis of Nanocrystalline CaWO4 as Low-TemperatureCo-fired Ceramic Material: Processing, Structural and Physical Properties Vidya, S.
2012
42 1 p. 129-137
artikel
24 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs Esposto, Michele
2012
42 1 p. 15-20
artikel
25 Thermal Parameters, Microstructure, and Mechanical Properties of Directionally Solidified Sn-0.7 wt.%Cu Solder Alloys Containing 0 ppm to 1000 ppm Ni Silva, Bismarck Luiz
2012
42 1 p. 179-191
artikel
26 Transformation-Induced Plasticity in Sn-In Solder Joints Lee, K.-O.
2012
42 1 p. 168-178
artikel
                             26 gevonden resultaten
 
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