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Details for article 24 of 26 found articles
| Title: |
The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs |
| Author: |
Esposto, Michele Lecce, Valerio Di Bonaiuti, Matteo Chini, Alessandro |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 42 (2012) nr. 1 pages 15-20 |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Springer US, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 24 of 26 found articles
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