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Journal description
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Details for article 17 of 26 found articles
| Title: |
Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors |
| Author: |
Kim, Hyeongnam Nath, Digbijoy Rajan, Siddharth Lu, Wu |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 42 (2012) nr. 1 pages 10-14 |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Springer US, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 26 found articles
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