nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Amorphous structures of buried oxide in SiC-on-insulator
|
Ishimaru, Manabu |
|
2001 |
30 |
12 |
p. 1489-1492 |
artikel |
2 |
Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices
|
Choy, Jun-Ho |
|
2001 |
30 |
12 |
p. 1609-1615 |
artikel |
3 |
A review: Thermal processing in fast ramp furnaces
|
Roy, Pradip K. |
|
2001 |
30 |
12 |
p. 1578-1583 |
artikel |
4 |
Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnects
|
Chu, L. W. |
|
2001 |
30 |
12 |
p. 1513-1519 |
artikel |
5 |
Dishing and nitride erosion of STI-CMP for different integration schemes
|
Hwee, Lim Lim |
|
2001 |
30 |
12 |
p. 1478-1482 |
artikel |
6 |
Effect of annealing on the surface microstructural evolution and the electromigration reliability of electroplated Cu films
|
Kang, S. H. |
|
2001 |
30 |
12 |
p. 1506-1512 |
artikel |
7 |
Effect of via etching process and postclean treatment on via electrical performance
|
Ho, Chiew Nyuk |
|
2001 |
30 |
12 |
p. 1595-1601 |
artikel |
8 |
Effects of deposition conditions of Al and Ti underlayer on electromigration reliability for deep-submicron interconnect metallization
|
Park, Y. B. |
|
2001 |
30 |
12 |
p. 1569-1577 |
artikel |
9 |
Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics
|
Zhong, Huicai |
|
2001 |
30 |
12 |
p. 1493-1498 |
artikel |
10 |
Electrochemical schottky characteristics of ZnO for capacitance-voltage measurements
|
Stutz, C. E. |
|
2001 |
30 |
12 |
p. L40-L42 |
artikel |
11 |
Foreword
|
Ravindra, N. M. |
|
2001 |
30 |
12 |
p. 1477 |
artikel |
12 |
Laser-induced titanium disilicide formation for submicron technologies
|
Chong, Y. F. |
|
2001 |
30 |
12 |
p. 1549-1553 |
artikel |
13 |
Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition
|
Berger, S. |
|
2001 |
30 |
12 |
p. 1532-1536 |
artikel |
14 |
N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics
|
Misra, Veena |
|
2001 |
30 |
12 |
p. 1499-1505 |
artikel |
15 |
Nano-indentation studies of xerogel and SiLK low-K dielectric materials
|
Sikder, A. K. |
|
2001 |
30 |
12 |
p. 1527-1531 |
artikel |
16 |
Nickel silicide as a contact material for submicron CMOS devices
|
Chi, D. Z. |
|
2001 |
30 |
12 |
p. 1483-1488 |
artikel |
17 |
Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2+ implantation
|
Lee, P. S. |
|
2001 |
30 |
12 |
p. 1554-1559 |
artikel |
18 |
Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process
|
Sikder, A. K. |
|
2001 |
30 |
12 |
p. 1520-1526 |
artikel |
19 |
Pattern density and deposition profile effects on oxide chemical-mechanical polishing and chip-level modeling
|
Park, Y. B. |
|
2001 |
30 |
12 |
p. 1560-1568 |
artikel |
20 |
Plastic deformation and interfacial sliding in Al and Cu thin film: Si substrate systems due to thermal cycling
|
Dutta, I. |
|
2001 |
30 |
12 |
p. 1537-1548 |
artikel |
21 |
Processing of Ta2O5 powders for electronic applications
|
Singh, RAJ P. |
|
2001 |
30 |
12 |
p. 1584-1594 |
artikel |
22 |
Relaxed silicon-germanium on insulator substrate by layer transfer
|
Cheng, Zhiyuan |
|
2001 |
30 |
12 |
p. L37-L39 |
artikel |
23 |
“Seedless” electrochemical deposition of copper on physical vapor deposition-W2N liner materials for ultra large scale integration (ULSI) devices
|
Shaw, Michael J. |
|
2001 |
30 |
12 |
p. 1602-1608 |
artikel |
24 |
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
|
Sopori, Bhushan |
|
2001 |
30 |
12 |
p. 1616-1627 |
artikel |
25 |
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
|
Sopori, Bhushan |
|
|
30 |
12 |
p. 1616-1627 |
artikel |