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                             25 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Amorphous structures of buried oxide in SiC-on-insulator Ishimaru, Manabu
2001
30 12 p. 1489-1492
artikel
2 Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices Choy, Jun-Ho
2001
30 12 p. 1609-1615
artikel
3 A review: Thermal processing in fast ramp furnaces Roy, Pradip K.
2001
30 12 p. 1578-1583
artikel
4 Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnects Chu, L. W.
2001
30 12 p. 1513-1519
artikel
5 Dishing and nitride erosion of STI-CMP for different integration schemes Hwee, Lim Lim
2001
30 12 p. 1478-1482
artikel
6 Effect of annealing on the surface microstructural evolution and the electromigration reliability of electroplated Cu films Kang, S. H.
2001
30 12 p. 1506-1512
artikel
7 Effect of via etching process and postclean treatment on via electrical performance Ho, Chiew Nyuk
2001
30 12 p. 1595-1601
artikel
8 Effects of deposition conditions of Al and Ti underlayer on electromigration reliability for deep-submicron interconnect metallization Park, Y. B.
2001
30 12 p. 1569-1577
artikel
9 Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics Zhong, Huicai
2001
30 12 p. 1493-1498
artikel
10 Electrochemical schottky characteristics of ZnO for capacitance-voltage measurements Stutz, C. E.
2001
30 12 p. L40-L42
artikel
11 Foreword Ravindra, N. M.
2001
30 12 p. 1477
artikel
12 Laser-induced titanium disilicide formation for submicron technologies Chong, Y. F.
2001
30 12 p. 1549-1553
artikel
13 Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition Berger, S.
2001
30 12 p. 1532-1536
artikel
14 N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics Misra, Veena
2001
30 12 p. 1499-1505
artikel
15 Nano-indentation studies of xerogel and SiLK low-K dielectric materials Sikder, A. K.
2001
30 12 p. 1527-1531
artikel
16 Nickel silicide as a contact material for submicron CMOS devices Chi, D. Z.
2001
30 12 p. 1483-1488
artikel
17 Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2+ implantation Lee, P. S.
2001
30 12 p. 1554-1559
artikel
18 Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process Sikder, A. K.
2001
30 12 p. 1520-1526
artikel
19 Pattern density and deposition profile effects on oxide chemical-mechanical polishing and chip-level modeling Park, Y. B.
2001
30 12 p. 1560-1568
artikel
20 Plastic deformation and interfacial sliding in Al and Cu thin film: Si substrate systems due to thermal cycling Dutta, I.
2001
30 12 p. 1537-1548
artikel
21 Processing of Ta2O5 powders for electronic applications Singh, RAJ P.
2001
30 12 p. 1584-1594
artikel
22 Relaxed silicon-germanium on insulator substrate by layer transfer Cheng, Zhiyuan
2001
30 12 p. L37-L39
artikel
23 “Seedless” electrochemical deposition of copper on physical vapor deposition-W2N liner materials for ultra large scale integration (ULSI) devices Shaw, Michael J.
2001
30 12 p. 1602-1608
artikel
24 Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties Sopori, Bhushan
2001
30 12 p. 1616-1627
artikel
25 Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties Sopori, Bhushan

30 12 p. 1616-1627
artikel
                             25 gevonden resultaten
 
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