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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications Malik, Priyanka
2012
52 1 p. 151-158
8 p.
artikel
2 Adhesion improvement of Epoxy Molding Compound – Pd Preplated leadframe interface using shaped nickel layers Ni, Mingzhi
2012
52 1 p. 206-211
6 p.
artikel
3 A finite weakest-link model of lifetime distribution of high-k gate dielectrics under unipolar AC voltage stress Le, Jia-Liang
2012
52 1 p. 100-106
7 p.
artikel
4 Analysis of a vibration-induced micro-generator with a helical micro-spring and induction coil Lu, W.L.
2012
52 1 p. 262-270
9 p.
artikel
5 Analysis of in situ monitored thermal cycling benefits for wireless packaging early reliability evaluation Ferrara, Michael
2012
52 1 p. 9-15
7 p.
artikel
6 A review on thermal cycling and drop impact reliability of SAC solder joint in portable electronic products Shnawah, Dhafer Abdulameer
2012
52 1 p. 90-99
10 p.
artikel
7 Competition between the buckling-driven delamination and wrinkling in compressed thin coatings Tarasovs, S.
2012
52 1 p. 296-299
4 p.
artikel
8 Enhancement of electrical stability of anisotropic conductive film (ACF) interconnections with viscosity-controlled and high Tg ACFs in fine-pitch chip-on-glass applications Chung, Chang-Kyu
2012
52 1 p. 217-224
8 p.
artikel
9 Finite difference modelling of moisture diffusion in printed circuit boards with ground planes Thomas, O.
2012
52 1 p. 253-261
9 p.
artikel
10 Flexible Chip-on-Flex (COF) and embedded Chip-in-Flex (CIF) packages by applying wafer level package (WLP) technology using anisotropic conductive films (ACFs) Suk, Kyoung-Lim
2012
52 1 p. 225-234
10 p.
artikel
11 High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs Kilchytska, V.
2012
52 1 p. 118-123
6 p.
artikel
12 Impact of ambient temperature set point deviation on Arrhenius estimates Whitman, Charles S.
2012
52 1 p. 2-8
7 p.
artikel
13 Impact of gate placement on RF power degradation in GaN high electron mobility transistors Joh, Jungwoo
2012
52 1 p. 33-38
6 p.
artikel
14 Increasing the reliability of solid state lighting systems via self-healing approaches: A review Lafont, Ugo
2012
52 1 p. 71-89
19 p.
artikel
15 Influence of trace alloying elements on the ball impact test reliability of SnAgCu solder joints Song, Jenn-Ming
2012
52 1 p. 180-189
10 p.
artikel
16 Inside front cover - Editorial board 2012
52 1 p. IFC-
1 p.
artikel
17 Introducing a scale structure to correlate quality and reliability Roesch, William J.
2012
52 1 p. 16-22
7 p.
artikel
18 Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications Herth, E.
2012
52 1 p. 141-146
6 p.
artikel
19 Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Douglas, E.A.
2012
52 1 p. 23-28
6 p.
artikel
20 Investigation of the fluid/structure interaction phenomenon in IC packaging Khor, C.Y.
2012
52 1 p. 241-252
12 p.
artikel
21 Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlO x on n-GaAs substrates Das, P.S.
2012
52 1 p. 112-117
6 p.
artikel
22 Lifetime prediction modeling of non-insulated TO-220AB packages with lead-based solder joints during power cycling Jacques, S.
2012
52 1 p. 212-216
5 p.
artikel
23 Modelling the effect of uneven PWB surface on stencil bending during stencil printing process Krammer, Olivér
2012
52 1 p. 235-240
6 p.
artikel
24 New threshold voltage definition for undoped symmetrical DG MOSFET Sałek, Paweł
2012
52 1 p. 294-295
2 p.
artikel
25 [No title] Davidović, Vojkan
2012
52 1 p. 300-
1 p.
artikel
26 [No title] Ersland, Peter
2012
52 1 p. 1-
1 p.
artikel
27 Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer Chen, Chao-Hung
2012
52 1 p. 147-150
4 p.
artikel
28 On the effects of temperature on the drop reliability of electronic component boards Mattila, T.T.
2012
52 1 p. 165-179
15 p.
artikel
29 On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum Touboul, A.D.
2012
52 1 p. 124-129
6 p.
artikel
30 On the use of high-impedance power supplies to reduce the substrate switching noise in system-on-chips Fiori, F.
2012
52 1 p. 282-288
7 p.
artikel
31 Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology Ning, Bingxu
2012
52 1 p. 130-136
7 p.
artikel
32 Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications Mroczyński, Robert
2012
52 1 p. 107-111
5 p.
artikel
33 Shock impact reliability characterization of a handheld product in accelerated tests and use environment Karppinen, J.
2012
52 1 p. 190-198
9 p.
artikel
34 Single-bit failure analysis at a nanometer resolution by conductive atomic force microscopy Jiang, Yong
2012
52 1 p. 159-164
6 p.
artikel
35 Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities Grasser, Tibor
2012
52 1 p. 39-70
32 p.
artikel
36 Temperature dependence of neutron-induced soft errors in SRAMs Bagatin, M.
2012
52 1 p. 289-293
5 p.
artikel
37 The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors Cho, Jaehyun
2012
52 1 p. 137-140
4 p.
artikel
38 The effect of nano-scale interaction forces on the premature pull-in of real-life Micro-Electro-Mechanical Systems Ardito, R.
2012
52 1 p. 271-281
11 p.
artikel
39 Thermal stability of back side metallization multilayer for power device application Ito, Takeshi
2012
52 1 p. 199-205
7 p.
artikel
40 The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability Ťapajna, Milan
2012
52 1 p. 29-32
4 p.
artikel
                             40 gevonden resultaten
 
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