| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs
|
Wieland, D.
|
|
|
169 |
C |
p.
|
artikel
|
| 2 |
A virtual test bench oriented to power module evaluation for hybrid traction systems
|
Sabato, Massimo
|
|
|
169 |
C |
p.
|
artikel
|
| 3 |
Bi, Ni and Ce coaddition improving shear property and interfacial growth of SAC305 solder joint on Cu substrate
|
Wu, Mi
|
|
|
169 |
C |
p.
|
artikel
|
| 4 |
Corrigendum to “Electrothermal power cycling of GaN and SiC cascode devices” [Microelectron. Reliab. 150 (November 2023) 115117]
|
Gunaydin, Y.
|
|
|
169 |
C |
p.
|
artikel
|
| 5 |
Degradation mode analysis of Cu bond wires on Cu plated SiC power semiconductors stressed by active power cycling
|
Sankari, Rasched
|
|
|
169 |
C |
p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
|
169 |
C |
p.
|
artikel
|
| 7 |
Efficient long-term reliability assessment of planar InGaAs/InP avalanche photodiodes using accelerated step-stress test
|
Han, Yunseok
|
|
|
169 |
C |
p.
|
artikel
|
| 8 |
Failure evolution analysis of SiC power modules in electric-thermal-mechanical multi-physical fields
|
Chen, Yifeng
|
|
|
169 |
C |
p.
|
artikel
|
| 9 |
Impact of aging on temperature measurements performed using a resistive temperature sensor with sensor-to-microcontroller direct interface
|
Grossi, Marco
|
|
|
169 |
C |
p.
|
artikel
|
| 10 |
Improved device structure for electrical safe operating area in SiC 1700-V VDMOSFET
|
Ke, Chao-Yang
|
|
|
169 |
C |
p.
|
artikel
|
| 11 |
Lidded SiP module: Warpage reduction techniques and thermal regime map
|
Shaikh, Javed
|
|
|
169 |
C |
p.
|
artikel
|
| 12 |
Micro-Raman and SEM analyses of failed GaN HEMT multilayer architecture
|
Fazio, Enza
|
|
|
169 |
C |
p.
|
artikel
|
| 13 |
Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: Analysis and hard-SOA
|
Said, N.
|
|
|
169 |
C |
p.
|
artikel
|
| 14 |
OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs
|
Fregolent, M.
|
|
|
169 |
C |
p.
|
artikel
|
| 15 |
On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches
|
Theocharis, J.
|
|
|
169 |
C |
p.
|
artikel
|
| 16 |
Performance analysis of MTJ-based SNN under resistive open and short defects
|
Gamez, Jesus
|
|
|
169 |
C |
p.
|
artikel
|
| 17 |
Performance and reliability analysis of redistribution layers under interfacial crack
|
Kumari, Vandana
|
|
|
169 |
C |
p.
|
artikel
|
| 18 |
Revised CV characterization technique for interface state evaluation in SiN/n-GaN MIS capacitors: Effects of extraction time, temperature and UV illumination
|
Hofer, A.M.
|
|
|
169 |
C |
p.
|
artikel
|
| 19 |
Single-event burnout mechanism and hardening for 1200V 4H-SiC LDMOS
|
Wang, Liqun
|
|
|
169 |
C |
p.
|
artikel
|
| 20 |
Solder mask as a reliable insulation layer on printed circuit boards–different layouts and materials under humidity and high voltage
|
Vogt, M.
|
|
|
169 |
C |
p.
|
artikel
|
| 21 |
Study of electrical and thermal performance in single-event burnout of partial-SOI LDMOS transistors
|
Gong, Yanfei
|
|
|
169 |
C |
p.
|
artikel
|
| 22 |
Study on gate oxide reliability of SiC power MOSFETs under 300 MeV proton irradiation
|
Xu, Jingyi
|
|
|
169 |
C |
p.
|
artikel
|
| 23 |
Synergistic effect of total ionizing dose and electromagnetic interference in SRAM using 22 nm FDSOI technology
|
Shang, Yinyin
|
|
|
169 |
C |
p.
|
artikel
|
| 24 |
Ultimate thermal stress reliability evaluation of 3D packaged memory
|
Zhou, Shuai
|
|
|
169 |
C |
p.
|
artikel
|
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