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Journal description
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Details for article 22 of 24 found articles
| Title: |
Study on gate oxide reliability of SiC power MOSFETs under 300 MeV proton irradiation |
| Author: |
Xu, Jingyi Wei, Ying Zhang, Dan Yu, Xuefeng Liang, Xiaowen Guo, Qi Xiang, Yutang Feng, Jie |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 169 () nr. C pages p. |
| Year: |
2025 |
| Contents: | |
| Publisher: |
The Authors |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 22 of 24 found articles
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